The present disclosure is directed to semiconductor packages, and methods for making them, which includes a package substrate, an interposer with a redistribution layer positioned on the interposer. A recess may be formed in a bottom surface in the interposer and a plurality of through silicon vias may be formed in the interposer, including the recess, that are coupled to a bottom surface of the redistribution layer. A recess device may be positioned in the recess and coupled to the redistribution layer. A top-side device may be positioned on and coupled to a top surface of the redistribution layer, and a footprint of the top-side device may be aligned to overlap the recess device. In an aspect, the recess device and the top-side device may be stacked memory devices, e.g., DRAMs, SRAMs, and/or other memory devices.

A method for fabricating a semiconductor device includes: forming an etch stopper pad including a sacrificial plug over a substrate and a sacrificial pad over the sacrificial plug; forming an etch target layer over the etch stopper pad; forming a plurality of openings by etching the etch target layer and stopping the etching at the sacrificial pad; forming an air gap by removing the sacrificial pad and the sacrificial plug through the openings; and forming a gap-fill layer that fills the openings and the air gap.

Some embodiments include an assembly having a stack of first and second alternating levels. The first levels are insulative levels. The second levels are device levels having integrated devices. Each of the integrated devices has a transistor coupled with an associated capacitor, and the capacitor is horizontally offset from the transistor. The transistors have semiconductor channel material, and have transistor gates along the semiconductor channel material. Each of the transistors has a first source/drain region along one side of the semiconductor channel material and coupled with the associated capacitor, and has a second source/drain region. Wordlines extend horizontally along the device levels and are coupled with the transistor gates. Digit lines extend vertically through the device levels and are coupled with the second source/drain regions. Some embodiments include methods of forming integrated structures.

A semiconductor device includes a substrate, a bitline, a bitline contact and a land pad. The bitline is over the substrate. The bitline contact is in contact with a bottom of the bitline and in the substrate. The bitline contact includes a first portion and a second portion below the first portion, and the first portion is wider than the second portion from a cross-section view. A word line is adjacent to the bitline contact. A land pad is on the substrate, and the land pad is adjacent to the word line, such that the word line is between the bitline contact and the land pad.

The present disclosure provides a bit line (BL) structure, a semiconductor structure and a method of manufacturing the BL structure. The BL structure is provided on a substrate, and includes: a contact portion, including a bottom surface connected to the substrate; a barrier layer, including an extension portion, the extension portion covering a top surface and an outer sidewall surface of the contact portion; and a conductive layer, covering a part of the barrier layer.

A method for manufacturing a semiconductor structure, a semiconductor structure, and a semiconductor memory are provided. The method includes: providing a substrate, the substrate including a plurality of active areas; forming bit line contact mask structures above the plurality of active areas, each bit line contact mask structure at least covering one active area terminal; performing downward etching along the bit line contact mask structures to form a node contact hole in the active area terminal, and filling the node contact hole with a semiconductor material to form a first node contact structure; and forming a plurality of bit line structures above the plurality of active areas, and continuously filling gaps between the plurality of bit line structures with the semiconductor material until a second node contact structure is formed, the first node contact structure and the second node contact structure collectively forming a node contact structure.

Disclosed are monolithically integrated three-dimensional (3D) DRAM array structures that include one-transistor, one-capacitor (1T1C) cells embedded at multiple device tiers of a layered substrate assembly. In some embodiments, vertical electrically conductive data-line and ground pillars extending through the substrate assembly provide the transistor source and ground voltages, and horizontal electrically conductive access lines at multiple device levels provide the transistor gate voltages. Process flows for fabricating the 3D DRAM arrays are also described.

The present disclosure relates to a semiconductor memory device and a fabricating method thereof, includes a substrate, a plurality of gate structures, a plurality of isolation fins, at least one bit line, and a plug. The gate structures are disposed in the substrate, being parallel with each other along a first direction. The isolation fins are disposed on the substrate, parallel with each other and extending along the first direction, over each of the gate structures respectively. The bit line is disposed on the substrate to extend along a second direction being perpendicular to the first direction. The bit line includes a plurality of pins extending toward the substrate, being alternately arranged with the isolation fins along the second direction. The plug is disposed on the substrate, being alternately with the bit line in the first direction.

Embodiments relate to a method for fabricating a semiconductor structure. The method includes: providing a substrate, where pillars arranged in an array are formed on a surface of the substrate, and bit lines extending along a first direction are formed at bottoms of the pillars; forming, between adjacent two of the pillars, a first groove extending along a second direction; forming an isolation layer on the substrate, where the isolation layer is filled in the first groove and is filled between adjacent two of the bit lines; etching the isolation layer to expose a surface of the pillar, where a first sub isolation layer positioned in the first groove is lower than a second sub isolation layer; forming a word line surrounding a side wall of the pillar, where a surface of the word line is not higher than a surface of the second sub isolation layer; and forming a dielectric layer on the word line.

Provided are a semiconductor structure and a method for manufacturing the same. The method includes the following operations. A trench is formed in a substrate. A sacrificial dielectric layer is filled in the trench. The sacrificial dielectric layer is etched gradually to gradually expose a sidewall of the trench, and at least part of the exposed sidewall of the trench is oxidized to form an oxide dielectric layer, in which a thickness of the oxide dielectric layer in the trench gradually increases in a direction extending from a bottom to an opening of the trench. A conductive layer is formed on a surface of the oxide dielectric layer and the conductive layer is formed in the trench.