The present application provides a memory device having a word line with an improved adhesion between a work function member and a conductive layer. The memory device includes a semiconductor substrate defined with an active area and including a recess extending into the semiconductor substrate, and a word line disposed within the recess, wherein the word line includes a first insulating layer disposed within and conformal to the recess, a conductive layer surrounded by the first insulating layer, a conductive member enclosed by the conductive layer, and a second insulating layer disposed over the conductive layer and conformal to the first insulating layer. A method of manufacturing the memory device is also disclosed.

A semiconductor device includes a semiconductor substrate, an active region on the semiconductor substrate and including a first semiconductor material, an isolation layer on the semiconductor substrate and a side surface of the active region, a first gate structure in a first gate trench crossing the active region, a second gate structure in a second gate trench in the isolation layer, the second gate structure being parallel to the first gate structure and adjacent to the active region, a semiconductor layer covering at least a part of the side surface of the active region, the semiconductor layer including a second semiconductor material different from the first semiconductor material, and at least a part of the semiconductor layer being between the active region and the second gate structure, and source/drain regions in the active region on opposite sides of the first gate trench.

A semiconductor device includes: an active region defined by a device isolation layer formed in a substrate; a word line configured to cross the active region, the word line extending in a first direction and being formed in the substrate; a bit line extending in a second direction perpendicular to the first direction on the word line; a first contact connecting the bit line to the active region; a first mask for forming the active region, the first mask being formed on the active region; and a second mask of which a height of a top surface thereof is greater than a height of a top surface of the active region, the second mask covering the word line, wherein the active region has a bar shape that extends to form an acute angle with respect to the first direction.

The present disclosure provides a semiconductor structure having a fin structure. The semiconductor includes a substrate defined with an active region. A first gate structure is disposed in the active region and includes a dielectric material. A second gate structure is disposed in the active region and includes the dielectric material. A fin structure having a first top surface is arranged to alternate with the first gate structure and the second gate structure. The first gate structure has a second top surface and the second gate structure has a third top surface. The second top surface and the third top surface are lower than the first top surface.

Some embodiments include a memory device having a buried wordline, a shield plate, and an access device. The access device includes first and second diffusion regions and a channel region. The diffusion regions and the channel region are arranged vertically so that the channel region is between the first and second diffusion regions. The wordline is adjacent to a first side surface of the channel region, and the shield plate is adjacent to a second side surface of the channel region; with the first and second side surfaces being in opposing relation to one another. Some embodiments include methods of forming integrated assemblies.

A method of manufacturing a memory structure is provided. The method includes forming a first gate structure, a second gate structure, and a plurality of source/drain regions in a substrate, in which the plurality of source/drain regions are disposed on opposite sides of the first gate structure and the second gate structures; performing a dry etching process to form a trench between the first gate structure and the second gate structure; performing a wet etching process to expand the trench, in which the expanded trench has a hexagonal shaped cross section profile; and forming a bit line contact in the expanded trench.

The present disclosure relates to a method for preparing a semiconductor device with air gaps between conductive lines (e.g., bit lines). The method includes forming a first dielectric structure and a second dielectric structure over a semiconductor substrate, and forming a conductive material over the first dielectric structure and the second dielectric structure. The conductive material extends into a first opening between the first dielectric structure and the second dielectric structure. The method also includes partially removing the conductive material to form a first bit line and a second bit line in the first opening and forming a sealing dielectric layer over the first bit line and the second bit line such that an air gap is formed between the sealing dielectric layer and the semiconductor substrate.

Semiconductor devices may include an active pattern, a gate structure in an upper portion of the active pattern, a bit line structure on the active pattern, a lower spacer structure on a lower portion of a sidewall of the bit line structure, and an upper spacer structure on an upper portion of the sidewall of the bit line structure. The lower spacer structure includes first and second lower spacers sequentially stacked, the first lower spacer contacts the lower portion of the sidewall of the bit line structure and does not include nitrogen, and the second lower spacer includes a material different from the first lower spacer. A portion of the upper spacer structure contacting the upper portion of the sidewall of the bit line structure includes a material different from the first lower spacer.

The present disclosure relates to a semiconductor memory device and a method of fabricating the same, and the semiconductor memory device includes a substrate, an active structure and a shallow trench isolation. The active structure is disposed within the substrate and includes a first active region and a second active region. The first active region includes a plurality of active region units, and the second active region is disposed at an outer side of the first active region to directly connect to a portion of the active region units. The second active region includes a plurality of first openings disposed an edge of the second active region. The shallow trench isolation is disposed within the substrate, to surround the active structure.

Embodiments provide a method for fabricating a semiconductor structure and a structure thereof. The method includes: providing a substrate; forming, on the substrate, semiconductor channels arranged in an array along a first direction and a second direction; forming bit lines extending along the first direction, wherein the bit lines are positioned in the substrate, and each of the bit lines is electrically connected to the semiconductor channels arranged along the first direction; forming word lines extending along the second direction, wherein the word lines wrap part of side surfaces of the semiconductor channels arranged along the second direction, where one of the word lines includes two sub word lines arranged at intervals along the first direction, and the sub word lines cover part of opposite side surfaces of the semiconductor channels along the first direction; and forming isolation structures positioned between adjacent word lines and between adjacent sub word lines.