A method of making a semi-conducting microfiber. The method includes melting a semi-conducting solid polymer material to form a polymer melt, dipping a tip of a tool into the polymer melt, and lifting the tip of the tool away from the polymer melt, forming a microfiber. A semiconducting microfiber. The semiconducting microfiber contains a non-conjugated semiconducting polymer matrix containing crystalline aggregates with intentionally placed conjugation-break spacers along the polymer backbone. A device containing a plurality of semiconducting microfibers. Each of the semiconducting fibers contains a non-conjugated semiconducting polymer matrix containing crystalline aggregates with intentionally placed conjugation-break spacers along the polymer backbone. An apparatus to make a semiconducting microfiber. The apparatus contains a container to melt and hold the molten polymer, a tool dipped into the polymer melt, and a means of lifting tip of the tool away from a surface of the polymer melt forming a microfiber.

Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.

Arrays containing carbon nanostructure-oxide-metal diodes, such as carbon nanotube (CNT)-oxide-metal diodes and methods of making and using thereof are described herein. In some embodiments, the arrays contain vertically aligned carbon nanostructures, such as multiwall carbon nanotubes (MWCNTs) coated with a conformal coating of a dielectric layer, such as a metal oxide. The tips of the carbon nanostructures are coated with a low work function metal, such as a calcium or aluminum to form a nanostructure-oxide-metal interface at the tips. The arrays can be used as rectenna at frequencies up to about 40 petahertz because of their intrinsically low capacitance. The arrays described herein produce high asymmetry and non-linearity at low turn on voltages down to 0.3 V and large current densities up to about 7,800 mA/cm.sup.2 and a rectification ratio of at least about 10, 15, 20, 25, 30, 35, 40, 45, 50, 55, or 60.

A photodetector array of a stacked film comprises, a plurality of first electrodes formed on a substrate and extending in parallel in a first direction, a plurality of second electrodes extending in parallel in a second direction crossing the first electrodes, a first organic thin film diode and a second organic thin film diode disposed between each of the first electrodes and each of the second electrodes, and an intermediate connection electrode layer serving as a common anode or a common cathode. The intermediate connection electrode layer connects the first organic thin film diode and the second organic thin film diode by backward-diode connection. At least either the first electrodes or the second electrodes are transparent with light passing therethrough, the first organic thin film diode is a photoresponsive organic diode, and the second organic thin film diode is an organic rectifier diode.

The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.

A Schottky diode comprises: a first electrode; a second electrode; and a body of semiconductive material connected to the first electrode at a first interface and connected to the second electrode at a second interface, wherein the first interface comprises a first planar region lying in a first plane and the first electrode has a first projection onto the first plane in a first direction normal to the first plane, the second interface comprises a second planar region lying in a second plane and the second electrode has a second projection onto the first plane in said first direction, at least a portion of the second projection lies outside the first projection, said second planar region is offset from the first planar region in said first direction, and one of the first interface and the second interface provides a Schottky contact.

Arrays containing carbon nanostructure-oxide-metal diodes, such as carbon nanotube (CNT)-oxide-metal diodes and methods of making and using thereof are described herein. In some embodiments, the arrays contain vertically aligned carbon nanostructures, such as multiwall carbon nanotubes (MWCNTs) coated with a conformal coating of a dielectric layer, such as a metal oxide. The tips of the carbon nanostructures are coated with a low work function metal, such as a calcium or aluminum to form a nanostructure-oxide-metal interface at the tips. The arrays can be used as rectenna at frequencies up to about 40 petahertz because of their intrinsically low capacitance. The arrays described herein produce high asymmetry and non-linearity at low turn on voltages down to 0.3 V and large current densities up to about 7,800 mA/cm.sup.2 and a rectification ratio of at least about 10, 15, 20, 25, 30, 35, 40, 45, 50, 55, or 60.

The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change memory elements and carbon based diodes, methods of making carbon based diodes, methods of making resistive change memory elements having carbon based diodes, and methods of making resistive change memory having resistive change memory elements having carbons based diodes. The carbon based diodes can be any suitable type of diode that can be formed using carbon allotropes, such as semiconducting single wall carbon nanotubes (s-SWCNT), semiconducting Buckminsterfullerenes (such as C60 Buckyballs), or semiconducting graphitic layers (layered graphene). The carbon based diodes can be pn junction diodes, Schottky diodes, other any other type of diode formed using a carbon allotrope. The carbon based diodes can be placed at any level of integration in a three dimensional (3D) electronic device such as integrated with components or wiring layers.

A Schottky diode includes an insulating substrate and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating substrate. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode; the second end is located on the surface of the insulating substrate. The semiconducting structure is nano-scale semiconductor structure. The second electrode is located on the second end.

A graphene nanoribbon has a chiral edge to which a dicarbimide structure is bonded. The dicarbimide structure is an electron-withdrawing group. The width and band gap of the graphene nanoribbon are controlled by a precursor molecule used for a polymerization reaction. Furthermore, n-type operation of the graphene nanoribbon is realized by the dicarbimide structure. In addition, with the graphene nanoribbon, an increase in ribbon length and suppression of a polymerization defect by the stabilization of a reaction intermediate of the precursor molecule, as well as improvement in orientation are realized by the dicarbimide structure.