A Schottky diode comprises: a first electrode; a second electrode; and a body of semiconductive material connected to the first electrode at a first interface and connected to the second electrode at a second interface, wherein the first interface comprises a first planar region lying in a first plane and the first electrode has a first projection onto the first plane in a first direction normal to the first plane, the second interface comprises a second planar region lying in a second plane and the second electrode has a second projection onto the first plane in said first direction, at least a portion of the second projection lies outside the first projection, said second planar region is offset from the first planar region in said first direction, and one of the first interface and the second interface provides a Schottky contact.

A Schottky diode comprises: a first electrode; a second electrode; and a body of semiconductive material connected to the first electrode at a first interface and connected to the second electrode at a second interface, wherein the first interface comprises a first planar region lying in a first plane and the first electrode has a first projection onto the first plane in a first direction normal to the first plane, the second interface comprises a second planar region lying in a second plane and the second electrode has a second projection onto the first plane in said first direction, at least a portion of the second projection lies outside the first projection, said second planar region is offset from the first planar region in said first direction, and one of the first interface and the second interface provides a Schottky contact.

A surface of a copper (Cu) electrode is modified by a combination of preliminary oxidation treatment and grafting of a bifunctional self-assembled monolayer based on fluorobiphenylthiol (FBPS) or biphenylthiol (BPS). Under these conditions, a dinaphtho[2,3-b:2,3-f]thieno[3,2-b]thiophene (DNTT)-based diode exhibits high mobility (0.35 cm.sup.2.Math.V.sup.1.Math.s.sup.1) due to the formation of an organized assembly of FBPS on copper oxide that has been partially reduced to Cu.sub.2O. This organization controls that of a semiconductor film. On the other hand, the same treatment of a copper electrode with BPS molecules does not function due to the disorganization of both the BPS self-assembled monolayer (SAM) and the DNTT film. These results suggest that a monolayer of dipole-oriented molecules lowers an injection barrier and determines the semiconductor organization, thereby improving the performance of derived electronic parts.

A surface of a copper (Cu) electrode is modified by a combination of preliminary oxidation treatment and grafting of a bifunctional self-assembled monolayer based on fluorobiphenylthiol (FBPS) or biphenylthiol (BPS). Under these conditions, a dinaphtho[2,3-b:2,3-f]thieno[3,2-b]thiophene (DNTT)-based diode exhibits high mobility (0.35 cm.sup.2.Math.V.sup.1.Math.s.sup.1) due to the formation of an organized assembly of FBPS on copper oxide that has been partially reduced to Cu.sub.2O. This organization controls that of a semiconductor film. On the other hand, the same treatment of a copper electrode with BPS molecules does not function due to the disorganization of both the BPS self-assembled monolayer (SAM) and the DNTT film. These results suggest that a monolayer of dipole-oriented molecules lowers an injection barrier and determines the semiconductor organization, thereby improving the performance of derived electronic parts.