A gateless P-N junction metrolog includes: a junction member including: a p-interface; and an n-interface disposed laterally and adjacent to the p-interface; and a p-n junction disposed at where the p-interface and n-interface contact; a drain electrode disposed on the junction member; a source electrode disposed on the junction member such that the source electrode is spaced apart from and opposing the drain electrode; an n-polymer disposed on the n-interface of the junction member, a p-polymer disposed on the p-interface of the junction member such that the n-polymer is interposed between the p-polymer and the n-interface; a mediation polymer disposed on the p-polymer such that the p-polymer is interposed between the mediation polymer and the junction member; and a mediator disposed in the mediation polymer and that receives electrons from the junction member in forming the p-interface.

A neuromorphic device is provided. The neuromorphic device may include a pre-synaptic neuron; a row line extending in a row direction from the pre-synaptic neuron; a post-synaptic neuron; a column line extending in a column direction from the post-synaptic neuron; and a synapse disposed at an intersection between the row line and the column line. The synapse may include a first synapse layer including a plurality of first carbon nano-tubes; a second synapse layer including a plurality of second carbon nano-tubes having different structures from the plurality of first carbon nano-tubes; and a third synapse layer including a plurality of third carbon nano-tubes having different structures from the plurality of first carbon nano-tubes and the plurality of second carbon nano-tubes.

Disclosed herein is a method of preparing organic films, including: (1) forming a first organic film including nanorods on a substrate using a first organic solution; (2) introducing a second organic solution at least into spaces between the nanorods of the first organic film; and (3) crystallizing the introduced second organic solution to form a second organic film. The method can provide an organic film having excellent properties in terms of crystallinity and topography.

A semiconductor element includes a semiconductor structure, a carbon nanotube and a conductive film. The semiconductor structure includes a P-type semiconductor layer and an N-type semiconductor layer and defines a first surface and a second surface. A thickness of the semiconductor structure ranges from 1 nanometer to 100 nanometers. The carbon nanotube is located on the first surface of the semiconductor. The conductive film is located on the second surface of the semiconductor. The conductive film is formed on the second surface by a depositing method or a coating method. The carbon nanotube, the semiconductor structure and the conductive film are stacked with each other to form a multi-layered stereoscopic structure.

In an organic EL element including a positive electrode, a negative electrode, and a light emitting layer (recombination layer) provided between the positive electrode and the negative electrode, an electron transport layer and an electron injection layer are provided between the light emitting layer and the negative electrode, and are sequentially arranged in the direction from the light emitting layer to the negative electrode. A hole injection layer and a hole transport layer are provided between the light emitting layer and the positive electrode, and are sequentially arranged in the direction from the positive electrode to the light emitting layer. A buffer layer for suppressing the electron trapping properties is provided between the light emitting layer and the hole transport layer.

A neuromorphic device is provided. The neuromorphic device may include a pre-synaptic neuron; a row line extending in a row direction from the pre-synaptic neuron; a post-synaptic neuron; a column line extending in a column direction from the post-synaptic neuron; and a synapse disposed at an intersection between the row line and the column line. The synapse may include a first synapse layer including a plurality of first carbon nano-tubes; a second synapse layer including a plurality of second carbon nano-tubes having different structures from the plurality of first carbon nano-tubes; and a third synapse layer including a plurality of third carbon nano-tubes having different structures from the plurality of first carbon nano-tubes and the plurality of second carbon nano-tubes.

A mixed material for vapor deposition of lithium contains lithium oxide M1 in an amount of 90% or more, sodium chloride (at least one material selected from oxides, sulfides, chlorides, and fluorides of alkali metals) M2 having a melting point lower than the melting point of lithium oxide M1, and magnesium oxide (at least one material selected from oxides and sulfides of alkaline-earth metals) M3 having a melting point higher than the melting point of lithium oxide M1.

In an organic EL element including a positive electrode, a negative electrode, and a light emitting layer (recombination layer) provided between the positive electrode and the negative electrode, an electron transport layer and an electron injection layer are provided between the light emitting layer and the negative electrode, and are sequentially arranged in the direction from the light emitting layer to the negative electrode. A hole injection layer and a hole transport layer are provided between the light emitting layer and the positive electrode, and are sequentially arranged in the direction from the positive electrode to the light emitting layer. A buffer layer for suppressing the electron trapping properties is provided between the light emitting layer and the hole transport layer.

A mixed material for vapor deposition of lithium contains lithium oxide M1 in an amount of 90% or more, sodium chloride (at least one material selected from oxides, sulfides, chlorides, and fluorides of alkali metals) M2 having a melting point lower than the melting point of lithium oxide M1, and magnesium oxide (at least one material selected from oxides and sulfides of alkaline-earth metals) M3 having a melting point higher than the melting point of lithium oxide M1.