A method of p-type doping a carbon nanotube includes the following steps: providing a single carbon nanotube; providing a layered structure, wherein the layered structure is a tungsten diselenide film or a black phosphorus film; and p-type doping at least one portion of the carbon nanotube by covering the carbon nanotube with the layered structure.

The invention relates to novel organic semiconducting compounds containing an asymmetrically dihalogenated electron-deficient unit, to methods for their preparation and educts or intermediates used therein, to compositions, polymer blends and formulations containing them, to the use of the compounds, compositions and polymer blends as organic semiconductors in, or for the preparation of, organic electronic (OE) devices, especially organic photovoltaic (OPV) devices, perovskite-based solar cell (PSC) devices, organic photodetectors (OPD), organic field effect transistors (OFET) and organic light emitting diodes (OLED), and to OE, OPV, PSC, OPD, OFET and OLED devices comprising these compounds, compositions or polymer blends.

A structure by which electric-field concentration which might occur between a source electrode and a drain electrode in a bottom-gate thin film transistor is relaxed and deterioration of the switching characteristics is suppressed, and a manufacturing method thereof. A bottom-gate thin film transistor in which an oxide semiconductor layer is provided over a source and drain electrodes is manufactured, and angle θ1 of the side surface of the source electrode which is in contact with the oxide semiconductor layer and angle θ2 of the side surface of the drain electrode which is in contact with the oxide semiconductor layer are each set to be greater than or equal to 20° and less than 90°, so that the distance from the top edge to the bottom edge in the side surface of each electrode is increased.

A low-molecular-weight fused polycyclic heteroaromatic compound has a compact planar structure in which seven or more aromatic rings and heteroaromatic rings are fused together, and thereby exhibits relatively high charge mobility, and improved processibility due to improved dissolubility for a solvent. An organic thin film and an electronic device include the fused polycyclic heteroaromatic compound expressed in Chemical Formula 1.

The oxide semiconductor film has the top and bottom surface portions each provided with a metal oxide film containing a constituent similar to that of the oxide semiconductor film. An insulating film containing a different constituent from the metal oxide film and the oxide semiconductor film is further formed in contact with a surface of the metal oxide film, which is opposite to the surface in contact with the oxide semiconductor film. The oxide semiconductor film used for the active layer of the transistor is an oxide semiconductor film highly purified to be electrically i-type (intrinsic) by removing impurities such as hydrogen, moisture, a hydroxyl group, and hydride from the oxide semiconductor and supplying oxygen which is a major constituent of the oxide semiconductor and is simultaneously reduced in a step of removing impurities.

A semiconductor device, including a first gate, a second gate, a third gate, a first semiconductor layer, a second semiconductor layer, a source, and a drain, is provided. The first semiconductor layer is located between the first gate and the second gate. The second gate is located between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is located between the second gate and the third gate. The source is electrically connected to the first semiconductor layer and the second semiconductor layer. The drain is electrically connected to the first semiconductor layer and the second semiconductor layer.

An electroluminescent display device according to an example embodiment of the present disclosure may include a substrate having an active area and a non-active area, an oxide thin film transistor disposed on the substrate, an inorganic layer disposed on the oxide thin film transistor, an organic layer disposed on the inorganic layer, at least one hole disposed in the organic layer of the non-active area, a hydrogen blocking layer disposed on the organic layer and an inner surface of the hole and a light emitting element disposed on the organic layer and including an anode, a light emitting unit, and a cathode. As a result, characteristics and reliability of the thin film transistor can be improved by preventing hydrogen from flowing into the oxide thin film transistor.

An electroluminescent display device according to an example embodiment of the present disclosure may include a substrate having an active area and a non-active area, an oxide thin film transistor disposed on the substrate, an inorganic layer disposed on the oxide thin film transistor, an organic layer disposed on the inorganic layer, at least one hole disposed in the organic layer of the non-active area, a hydrogen blocking layer disposed on the organic layer and an inner surface of the hole and a light emitting element disposed on the organic layer and including an anode, a light emitting unit, and a cathode. As a result, characteristics and reliability of the thin film transistor can be improved by preventing hydrogen from flowing into the oxide thin film transistor.

A method for forming a nanostructure array and a field effect transistor device on a substrate are provided. The method for forming the nanostructure array includes: providing a template solution comprising template nanostructures; depositing at least one template nanostructure onto the substrate by contacting the template solution with the substrate; and forming on the substrate at least one fixation structure each intersecting with all or a portion of the at least one template nanostructure to fix all or a portion of the at least one template nanostructure on the substrate.

A method for manufacturing an organic memory device is disclosed. According to one embodiment, the method comprises the steps of: forming a first electrode on a substrate; forming an organic active layer on the first electrode; and forming a second electrode on the organic active layer through an orthogonal photolithography technique using a fluorinated material.