An organic light emitting diode (OLED) display including: a substrate; an organic light emitting diode formed on the substrate; a metal oxide layer formed on the substrate and covering the organic light emitting diode; a first inorganic layer formed on the substrate and covering the organic light emitting diode; a second inorganic layer formed on the first inorganic layer and contacting the first inorganic layer at an edge of the second inorganic layer; an organic layer formed on the second inorganic layer and covering a relatively smaller area than the second inorganic layer; and a third inorganic layer formed on the organic layer, covering a relatively larger area than the organic layer, and contacting the first inorganic layer and the second inorganic layer at an edge of the third inorganic layer.

The current disclosure describes techniques for forming semiconductor structures having multiple semiconductor strips configured as channel portions. In the semiconductor structures, diffusion break structures are formed after the gate structures are formed so that the structural integrity of the semiconductor strips adjacent to the diffusion break structures will not be compromised by a subsequent gate formation process. The diffusion break extends downward from an upper surface until all the semiconductor strips of the adjacent channel portions are truncated by the diffusion break.

The present invention provides compounds comprising at least one unit of formula (1) or (1′) as well as a process for the preparation of the compounds, intermediates of this process, electronic devices comprising the compounds, and the use of the compounds as semiconducting materials. ##STR00001##

A display module includes a window including a base substrate and a bezel pattern overlapping the base substrate in a plan view, and a display panel. The bezel pattern includes a first bezel pattern extending along an edge of the base substrate, and a second bezel pattern which extends from the first bezel pattern and of which at least a portion defines a transmission area. The display panel includes a glass substrate, an encapsulation substrate on the glass substrate, a sealing member coupling the glass substrate and the encapsulation substrate and overlapping the first bezel pattern in the plan view, a circuit element layer disposed on the glass substrate and including a transistor, and a display element layer disposed on the circuit element layer and including light emitting elements. The display element layer exposes a portion of a layer disposed thereunder, which corresponds to the transmission area.

A flexible organic light-emitting display device and a method of manufacturing the same. The flexible organic light-emitting display device includes a metal oxide infiltrated layer as part of at least one of a plurality of organic layers stacked on and around an organic light-emitting device.

A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.

A light-emitting device includes a first electrode; a second electrode facing the first electrode; an interlayer between the first electrode and the second electrode, the interlayer including an emission layer, and a heterocyclic compound represented by Formula 1, and an electronic apparatus includes the light-emitting device:

##STR00001##

wherein Formula 1 is as defined in the present specification.

A light-emitting device includes a first electrode; a second electrode facing the first electrode; an interlayer between the first electrode and the second electrode, the interlayer including an emission layer, and a heterocyclic compound represented by Formula 1, and an electronic apparatus includes the light-emitting device:

##STR00001##

wherein Formula 1 is as defined in the present specification.

An object of the present invention is to apply an organic thin-film transistor, which is produced using an organic semiconductor material, to an analog amplifier. The analog amplifier according to the present invention includes: a first amplifier (2) which voltage-amplifies an analog signal to be amplified; and a second amplifier (6) which power-amplifies the thus amplified signal output from the first amplifier to generate a drive signal that drives an equipment (10). The first amplifier includes an organic semiconductor amplifier element, namely an organic thin-film field-effect transistor (4), in which a semiconductor layer forming a channel is composed of an organic semiconductor. An organic semiconductor material is solvent-soluble and thus can be applied to form a film by a printing method such as an ink-jet method. Therefore, the production thereof can be carried out using a simple production facility.

A semiconductor device and method of manufacturing using carbon nanotubes are provided. In embodiments a stack of nanotubes are formed and then a non-destructive removal process is utilized to reduce the thickness of the stack of nanotubes. A device such as a transistor may then be formed from the reduced stack of nanotubes.