A flexible array substrate structure and manufacturing method thereof are disclosed, in which the patterning process of an organic semi-conductive layer is achieved by using the inside wall of the opening of a color film layer as a bank, so that one mask can be saved. Also, a process for manufacturing a device can be simplified by an improved device structure, so that the flexible array substrate structure of the invention can be obtained by only using four masks.

Methods for producing organic field effect transistors, organic field effect transistors, and electronic switching devices are provided. The methods may include providing a gate electrode and a gate insulator assigned to the gate electrode for electrical insulation on a substrate, depositing a first organic semiconducting layer on the gate insulator, generating a first electrode and an electrode insulator assigned to the first electrode for electrical insulation on the first organic semiconducting layer, depositing a second organic semiconducting layer on the first organic semiconducting layer and the electrode insulator, and generating a second electrode on the second organic semiconducting layer.

The invention discloses an organic electric memory device based on phosphonic acid or trichlorosilane-modified ITO glass substrate and a preparation method thereof. The preparation method comprises the following steps of 1) cleaning the ITO glass substrate; 2) forming a phosphonic acid or trichlorosilane modified layer; 3) forming an organic coating film layer; and 4) forming an electrode, and finally obtaining the organic electric memory device. By adoption of the method, a series of sandwich-type organic electric memory devices are prepared; meanwhile, the preparation method is simple, convenient, fast, and easy to operate; compared with the conventional device, the turn-on voltage of the organic electric memory device is lowered, the yield of the multi-level system is improved, and the problem of relatively low ternary productivity at present is solved; and therefore, the organic electric memory device has extremely high application value in the future memory fields.

Provided is a display device including a substrate having a first region and a second region adjacent to the first region. The second region is located in a direction from the first region to an outside of the substrate. The first region possesses a transistor, a leveling film over the transistor, and a light-emitting element over the leveling film and electrically connected to the transistor. The display device further includes a plurality of metal films in the second region and a sealing film. The plurality of metal films includes at least one of Group 1 metal elements and Group 2 elements, and the leveling film is arranged so as to be confined in the first region.

An interlayer is used to reduce Fermi-level pinning phenomena in a semiconductive device with a semiconductive substrate. The interlayer may be a rare-earth oxide. The interlayer may be an ionic semiconductor. A metallic barrier film may be disposed between the interlayer and a metallic coupling. The interlayer may be a thermal-process combination of the metallic barrier film and the semiconductive substrate. A process of forming the interlayer may include grading the interlayer. A computing system includes the interlayer.

An organic device is disclosed. In an embodiment the organic device includes an organic component designed to emit and/or detect radiation, wherein the organic component has a first layer stack and a radiation passage surface and an organic protection diode having a second layer stack, wherein the organic protection diode is arranged directly after the organic component in a stacking direction (Z), and wherein the organic protection diode is designed to protect the organic component from an electrostatic discharge and/or from a polarity reversal of the organic component.

The present invention relates to a compounds of formula I

R.sup.1-(A.sup.1-Z.sup.1).sub.r—B.sup.1—Z.sup.L-A.sup.2-(Z.sup.3-A.sup.3).sub.s-G   (I)

in which the occurring groups and parameters have the meanings given in claim 1, to the use thereof for the formation of molecular layers, in particular self assembled monolayers, to a process for the fabrication of a switching element for memristive devices comprising said molecular layers and to a memristic device comprising said switching element.

In some examples, an organic light emitting transistor (OLET) comprises a substrate layer; a gate electrode disposed on the substrate layer; and a dielectric layer disposed on the gate electrode. The OLET further comprises a first organic semiconductor layer (OSL) disposed on the dielectric layer; a second OSL disposed on the first OSL; a third OSL disposed on the second OSL; a drain electrode disposed on the third OSL; a first source electrode partially disposed on both the first OSL and the third OSL; and a second source electrode partially disposed on both the first OSL and the third OSL, wherein a length of the first OSL is larger than lengths of both the second and third OSLs, and wherein a width of the first OSL is smaller than widths of both the second and third OSLs.

A fan-out wiring structure of a display panel is configured to electrically connect a signal transmission interface of a driving circuit to a signal receiving interface of a display area of the display panel. The fan-out wiring structure includes a first wiring layer and a second wiring layer. The first and the second wiring layers both define an extending area, a connecting area, and a bent area disposed between the extending area and the connecting area. The extending area and the connecting area of the first wiring layer each have a plurality of metal wires, and the bent area of the first wiring layer has a plurality of flexible wires. Each of the flexible wires is made of an organic electrically conductive material, and opposite ends of each of the flexible wires are connected to corresponding metal wires in the extending area and the connecting area, respectively.

A flexible device (1) includes an insulating substrate (2), a source electrode (3), a drain electrode (4), and an extended gate electrode (5) formed on a surface of the insulating substrate (2) at intervals, a channel (6) arranged at an interval between the source electrode (3) and the drain electrode (4), and a gate dielectric (7) formed so as to cover all of the channel (6) and a part of the extended gate electrode (5), in which the insulating substrate (2) is a flexible thin film having light transmissivity, the extended gate electrode (5) is a carbon material thin film having biocompatibility and light transmissivity, the channel (6) is an organic semiconductor thin film, and the gate dielectric (7) is an ionic liquid or an ionic gel.