Patent classifications
H10K30/15
FLEXIBLE TRANSPARENT ELECTRODE AND PREPARATION METHOD THEREFOR, AND FLEXIBLE SOLAR CELL PREPARED USING FLEXIBLE TRANSPARENT ELECTRODE
A flexible solar cell is a flexible organic solar cell that can be completed at a low temperature, is easily prepared, and has a relatively low cost and relatively high efficiency. The flexible transparent electrode is prepared by selecting a plastic substrate with silver nanowires embedded therein, and thus, a flexible transparent electrode with better electrical properties, stronger adhesion and better mechanical properties can be obtained. The flexible transparent electrode prepared using the substrate with the silver nanowires embedded therein has lower sheet resistance and higher conductivity. Moreover, on a microstructure, the silver nanowires in the flexible substrate with the silver nanowires embedded therein can induce upper spin-coated silver nanowires to be more uniformly distributed, and can form nodes with the upper spin-coated silver nanowires, such that the adhesion between an upper electrode and the substrate is enhanced, which can further guarantee the good mechanical properties of the electrode.
OPTOELECTRONIC DEVICES AND METHODS OF MAKING THE SAME
The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.
ZINC OXIDE-POLYCYCLIC AROMATIC HYDROCARBON QUANTUM DOT CAPABLE OF BLUE LIGHT EMISSION AND MANUFACTURING METHOD THEREOF
Disclosed are a zinc oxide-polycyclic aromatic hydrocarbon quantum dot capable of blue light emission in which ZnO is combined with a polycyclic aromatic hydrocarbon having a blue light emitting characteristic to realize a quantum dot of a core-shell structure and electron emission transition is induced to proceed within the polycyclic aromatic hydrocarbon so that the purity of blue light emission is improved, and a manufacturing method thereof. The zinc oxide-polycyclic aromatic hydrocarbon quantum dot capable of blue light emission includes a core-shell structure of zinc oxide-polycyclic aromatic hydrocarbon (ZnO-PAH) quantum dot in which the ZnO quantum dot and the PAH are combined, the ZnO-PAH quantum dot includes an energy level in a form of a Type II structure or a quasi-Type II structure.
PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERSION DEVICE INCLUDING THE PHOTOELECTRIC CONVERSION ELEMENT
The present disclosure provides a photoelectric conversion element including a first electrode 3, a second electrode 7, a photoelectric conversion layer 5 between the first electrode 3 and the second electrode 7, and a reflection layer 6 between one of the first electrode 3 and the second electrode 7 and the photoelectric conversion layer 5. The wavelength at which the reflectance of the reflection layer 6 is maximum in the visible region is within the range of wavelengths in which the optical absorption coefficient of the photoelectric conversion layer 5 is ⅕ or more of the maximum optical absorption coefficient in the visible region.
OPTOELECTRONIC DEVICES AND METHODS OF MAKING THE SAME
The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.
OPTOELECTRONIC DEVICES AND METHODS OF MAKING THE SAME
The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.
HETEROJUNCTION OPTOELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME
The present disclosure relates to an optoelectronic device including a heterojunction of a halide perovskite single crystal and a two-dimensional semiconductor material layer and a method of manufacturing the same.
Optoelectronic device
The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity (which may be said capping layer) typically forms a planar heterojunction with the n-type region or the p-type region. The invention also provides processes for producing such optoelectronic devices which typically involve solution deposition or vapour deposition of the perovskite. In one embodiment, the process is a low temperature process; for instance, the entire process may be performed at a temperature or temperatures not exceeding 150° C.
SOLAR CELL
A solar cell includes a first electrode, an intermediate layer, a photoelectric conversion layer, and a second electrode in this order. The intermediate layer contains at least one compound A selected from predefined compound group I and at least one compound B selected from predefined compound group II.
Photovoltaic Devices Containing Cyclobutane-Based Hole Transporting Materials
The teachings herein pertain to hole transporting compounds containing a cyclobutyl moiety, which can be made into organic hole conductors and into hole transporting material. Additionally, optoelectronic and photoelectrochemical devices comprising such hole transporting material or hole transporting compound are described, in particular photovoltaic devices, organic-inorganic perovskite films, layered photovoltaic devices, p-n heterojunctions, dye-sensitized solar cells, organic solar cells and solid-state solar cells. Notably, a fabricated perovskite solar cell module using a disclosed HTM compound exhibited a record efficiency over 19.0% with an active area of 30.24 cm.sup.2.