Embodiments related to interlayers (e.g., interlayers comprising a transition metal oxide, a transition metal oxynitride, and/or a transition metal nitride) and associated systems, devices (e.g., photovoltaic devices), and methods are disclosed. In some embodiments, a system for exciton transfer includes a substrate including an inorganic semiconductor. An interlayer may be disposed on the substrate, and a layer including a material that undergoes singlet exciton fission when exposed to electromagnetic radiation may be disposed on the interlayer. The interlayer may be disposed between the substrate and the layer. In some embodiments, a method for manufacturing a system for exciton transfer involves depositing an interlayer onto a substrate that includes an inorganic semiconductor. The method may also include depositing a layer including a material that undergoes singlet exciton fission when exposed to electromagnetic radiation onto the interlayer.

A solid-state imaging element according to an embodiment of the present disclosure includes: a photoelectric conversion layer; an insulation layer provided on one surface of the photoelectric conversion layer and having a first opening; and a pair of electrodes opposed to each other with the photoelectric conversion layer and the insulation layer interposed therebetween. Of the pair of electrodes, one electrode provided on a side on which the insulation layer is located includes a first electrode and a second electrode each of which is independent, and the first electrode is embedded in the first opening provided in the insulation layer to be electrically coupled to the photoelectric conversion layer.

A solar cell according to the present disclosure includes a first electrode, a second electrode, a photoelectric conversion layer located between the first electrode and the second electrode, and a first electron transport layer located between the first electrode and the photoelectric conversion layer, in which at least one selected from the group consisting of the first electrode and the second electrode is translucent, the photoelectric conversion layer contains a perovskite compound composed of a monovalent cation, a Sn cation, and a halogen anion, and the first electron transport layer contains a niobium oxide halide.

There is provided a method of producing a photovoltaic device comprising a photoactive region comprising a layer of perovskite material, wherein the layer of perovskite material is disposed on a surface that has a roughness average (R.sub.a) or root mean square roughness (R.sub.rms) of greater than or equal to 50 nm. The method comprises using vapour deposition to deposit a substantially continuous and conformal solid layer comprising one or more initial precursor compounds of the perovskite material, and subsequently treating the solid layer with one or more further precursor compounds to form a substantially continuous and conformal solid layer of the perovskite material on the rough surface. There is also provided a photovoltaic device comprising a photoactive region comprising a layer of perovskite material disposed using the method.

The present disclosure relates to a perovskite that includes ABX.sub.3, where A is an organic cation, B is a second cation, X is an anion, and the perovskite has a film density (ρ) of less than 4.37 g/cm.sup.3. In some embodiments of the present disclosure, the film density may be in the range, 4.1 g/cm.sup.3≤ρ≤4.37 g/cm.sup.3. In some embodiments of the present disclosure, the organic cation may include at least one of dimethylammonium (DMA), guanidinium (GA), and/or acetamidinium (Ac). In some embodiments of the present disclosure, A may further include cesium.

An inspection method for a multilayer semiconductor device is provided. The inspection method can investigate multilayered ensembles of a multilayer semiconductor device and obtain stratigraphic thickness (ST) maps of each layer in the multilayer semiconductor device by utilizing absorption edges of materials of interests and obtaining calibration quality curves.

An organic solar cell having a structure including a dual layer type charge transport layer, which has an ultraviolet blocking layer, is provided. The organic solar cell has a dual layer charge transport layer by including a photostable charge transport layer on one surface or both surfaces of a photoactive layer, thereby having enhanced charge transport capability within the solar cell, improved photostability without an external protection film, and excellent durability. In addition, a method for manufacturing an organic solar cell is provided which forms a photostability charge transport layer on one surface or both surfaces of a photoactive layer, thereby manufacturing a solar cell, which can be stable when exposed to ultraviolet light during electrode formation and has a highly efficient and photostability-enhanced structure in a manufacturing process without a step of attaching a protection glass and a protection film.

The present invention pertains to a light absorption layer for forming a photoelectric conversion element and a solar cell having an excellent photoelectric conversion efficiency, and a photoelectric conversion element and a solar cell having the light absorption layer. This light absorption layer contains a perovskite compound and quantum dots, and the quantum dots have a circularity of 0.50 to 0.92. The present invention is a light absorption layer, a photoelectric conversion element, and a solar cell containing a perovskite compound and quantum dots, wherein the particle shape of the quantum dots is controlled, the surface of the quantum dots is covered by a compound having a specific energy level, or the above features are combined, whereby it is made possible to obtain a light absorption layer, a photoelectric conversion element, and a solar cell having an excellent photoelectric conversion efficiency.

To provide a photoelectric conversion element that can improve image quality. Provided is a photoelectric conversion element (100) including at least a first electrode (101), a work function control layer (108), a photoelectric conversion layer (102), an oxide semiconductor layer (104), and a second electrode (107) in this order, and further including a third electrode (105), in which the third electrode (105) is provided apart from the second electrode (107) and is provided facing the photoelectric conversion layer (102) via an insulating layer (106), and the work function control layer (108) contains a larger amount of oxygen than an amount of oxygen satisfying a stoichiometric composition.

To provide a solid-state imaging element capable of further improving reliability. Provided is a solid-state imaging element including at least a first photoelectric conversion section, and a semiconductor substrate in which a second photoelectric conversion section is formed, in this order from a light incidence side, in which the first photoelectric conversion section includes at least a first electrode, a photoelectric conversion layer, a first oxide semiconductor layer, a second oxide semiconductor layer, and a second electrode in this order, and a film density of the first oxide semiconductor layer is higher than a film density of the second oxide semiconductor layer.