A laminate which allows to obtain an organic thin-film solar cell having excellent output characteristics and transparency is provided. The laminate as above has a titanium oxide layer that is disposed on the member serving as a light-transmissive electrode layer and serves as an electron transport layer. The titanium oxide layer has a thickness of not less than 1.0 nm and not more than 200.0 nm. The titanium oxide layer contains indium oxide and metallic indium, InOx/Ti is not less than 0.50 and not more than 20.00 in atomic ratio, and InM/Ti is less than 0.100 in atomic ratio, where an elemental titanium content is represented by Ti, an indium oxide content is represented by InOx, and a metallic indium content is represented by InM.

An imaging apparatus includes a unit pixel including a pixel electrode, a charge accumulation region electrically connected to the pixel electrode, and a signal detection circuit electrically connected to the charge accumulation region; a counter electrode facing the pixel electrode; a photoelectric conversion layer disposed between the electrodes; and a voltage supply circuit configured to selectively apply any one of first, second, and third voltages between the electrodes. The photoelectric conversion layer exhibits first and second wavelength sensitivity characteristics in a wavelength range when the voltage supply circuit applies the first and second voltages between the electrodes, respectively, and becomes insensitive to light in the wavelength range when the voltage supply circuit applies the third voltage between the electrodes.

Photovoltaic devices, and methods of fabricating photovoltaic devices. The photovoltaic devices may include a first electrode, at least one quantum dot layer, at least one semiconductor layer, and a second electrode. The first electrode may include a layer including Cr and one or more silver contacts.

A method for manufacturing a photoelectric conversion element according to an aspect includes an active layer forming step of forming an active layer having a repeating unit represented by Chemical Formula 1. The active layer forming step includes: a first layer forming step of forming a first layer by applying polyamic acid serving as a precursor; a first heating step of heating the first layer at 120° C. for 20 minutes to 60 minutes; and a second heating step of heating the first layer at 230° C. to 280° C. for 10 minutes.

A photoelectric converter includes: a first electrode; a second electrode; a first photoelectric conversion layer; a second photoelectric conversion layer; a first buffer layer; and a second buffer layer. The second electrode is disposed to be opposed to the first electrode. The first photoelectric conversion layer is provided between the first electrode and the second electrode. The first photoelectric conversion layer includes a first dye material and a first carrier transport material. The second photoelectric conversion layer is stacked on the second electrode side of the first photoelectric conversion layer between the first electrode and the second electrode. The second photoelectric conversion layer includes a second dye material and a second carrier transport material. The second dye material has a light absorption waveform different from a light absorption waveform of the first dye material. The first buffer layer has a first electrical conduction type. The first buffer layer is provided between the first electrode and the first photoelectric conversion layer. The second buffer layer has a second electrical conduction type different from the first electrical conduction type. The second buffer layer is provided between the second electrode and the second photoelectric conversion layer.

Disclosed herein are charge or electricity generating devices and methods of making and use thereof.

The organic small molecule 4,4′,4″,4′″-(5,5-dimethoxycyclopenta-1,3-diene-1,2,3,4-tetrayl)tetrakis(N,N-bis(4-methoxyhenyl)aniline (CPDA 1), shows electrochemical properties very close to spiro-OMeTAD indicating a high compatibility with PSC systems for its use as a hole transport material (HTM). The implementation of the cyclopentadiene dimethyl acetale core helps to red shift the absorption onset of the films as well as provide a flexible spatial configuration of the molecule, which is essential for optimum film forming properties. Transient and steady state emission analysis as well as hole mobility measurements indicate that the new HTM allows a better charge extraction, transport and separation than the spiro-OMeTAD reference compound. PSCs based on the new CPDA 1 show a PCE close to 23% with lower hysteresis than its analogue. Stability studies performed under ambient, heated and humid conditions all showed that CPDA 1 is over-performing spiro-OMeTAD. Furthermore the production cost of CPDA 1 is about 10 times lower than that of spiro-OMeTAD, contributing to render PSCs more affordable.

A laminate which allows to obtain an organic thin-film solar cell having excellent output characteristics and transparency is provided. The laminate as above has a titanium oxide layer that is disposed on the member serving as a light-transmissive electrode layer and serves as an electron transport layer. The titanium oxide layer has a thickness of not less than 1.0 nm and not more than 200.0 nm. The titanium oxide layer contains indium oxide and metallic indium, InOx/Ti is not less than 0.50 and not more than 20.00 in atomic ratio, and InM/Ti is less than 0.100 in atomic ratio, where an elemental titanium content is represented by Ti, an indium oxide content is represented by InOx, and a metallic indium content is represented by InM.

An optoelectronic device is provided, the p-doped HTL device comprising an active layer comprising organometal halide perovskite and a hole transport layer (HTL) formed by vacuum evaporation and configured to transport hole carriers. The HTL includes a first sublayer comprising a hole transport material (HTM) doped with an n-dopant and disposed adjacent to the active layer, a second sublayer comprising the HTM that is undoped and disposed adjacent to the first sublayer, and a third sublayer comprising the HTM doped with a p-dopant and disposed adjacent to the second sublayer. The doping concentration of the n-dopant for the n-doped sublayer is determined to match the highest occupied molecular orbital energy level of the n-doped sublayer with the valence band maximum energy level of the perovskite active layer.

A process of forming a photoactive layer of a planar perovskite photoactive device comprising: applying at least one layer of a first precursor solution to a substrate to form a first precursor coating on at least one surface of the substrate, the first precursor solution comprising MX.sub.2 and AX dissolved in a first coating solvent, wherein the molar ratio of MX.sub.2:AX=1:n with 0<n<1; and applying a second precursor solution to the first precursor coating to convert the first precursor coating to a perovskite layer AMX.sub.3, the second precursor solution comprising AX dissolved in a second coating solvent, the first precursor solution reacting with the second precursor solution to form a perovskite layer AMX.sub.3 on the substrate, wherein A comprises an ammonium group or other nitrogen containing organic cation, M is selected from Pb, Sn, Ge, Ca, Sr, Cd, Cu, Ni, Mn, Co, Zn, Fe, Mg, Ba, Si, Ti, Bi, or In, X is selected from at least one of F, Cl, Br or I.