Graphene photodetectors capable of operating in the sub-bandgap region relative to the bandgap of semiconductor nanoparticles, as well as methods of manufacturing the same, are provided. A photodetector can include a layer of graphene, a layer of semiconductor nanoparticles, a dielectric layer, a supporting medium, and a packaging layer. The semiconductor nanoparticles can be semiconductors with bandgaps larger than the energy of photons meant to be detected.

According to one embodiment, According to one embodiment of the invention, a conductive member includes a first layer including a metal nanowire, a second layer including a polythiophene member, and a third layer including a graphene member including a graphene skeleton. The second layer is provided between the metal nanowire and the third layer.

Provided are a core-shell structured perovskite nanocrystalline particle light-emitting body, a method of preparing the same, and a light emitting device using the same. The core-shell structured organic-inorganic hybrid perovskite nanocrystalline particle light-emitting body or metal halide perovskite nanocrystalline particle light-emitting body is able to be dispersed in an organic solvent, and has a perovskite nanocrystal structure and a core-shell structured nanocrystalline particle structure. Therefore, in the perovskite nanocrystalline particle light-emitting body of the present invention, as a shell is formed of a substance having a wider band gap than that of a core, excitons may be more dominantly confined in the core, and durability of the nanocrystal may be improved to prevent exposure of the core perovskite to the air using a perovskite or inorganic semiconductor, which is stable in the air, or an organic polymer.

The present disclosure relates to a composition that includes a particle and a surface species, where the particle has a characteristic length between greater than zero nm and 100 nm inclusively, and the surface species is associated with a surface of the particle such that the particle maintains a crystalline form when the composition is at a temperature between −180° C. and 150° C.

A device includes chalcogenide nanoparticles and a light-sensitive material configured to absorb upconverted light generated by the chalcogenide nanoparticles. A method includes receiving, at chalcogenide nanoparticles, input light having a first wavelength; and upconverting the input light using the chalcogenide nanoparticles, to generate output light having a second wavelength, in which the second wavelength is less than the first wavelength. A device includes a transparent material, the transparent material being transparent to at least one of infrared light and visible light, and chalcogenide nanoparticles embedded in the transparent material.

A device includes chalcogenide nanoparticles and a light-sensitive material configured to absorb upconverted light generated by the chalcogenide nanoparticles. A method includes receiving, at chalcogenide nanoparticles, input light having a first wavelength; and upconverting the input light using the chalcogenide nanoparticles, to generate output light having a second wavelength, in which the second wavelength is less than the first wavelength. A device includes a transparent material, the transparent material being transparent to at least one of infrared light and visible light, and chalcogenide nanoparticles embedded in the transparent material.

A core-shell particle which includes a core-shell structure includes an inorganic nanoparticle having a light wavelength conversion ability and a coating layer formed on a surface of the inorganic nanoparticle and formed of an inorganic perovskite type substance.

A core-shell particle which includes a core-shell structure includes an inorganic nanoparticle having a light wavelength conversion ability and a coating layer formed on a surface of the inorganic nanoparticle and formed of an inorganic perovskite type substance.

Disclosed are a diode element, a sensor including the same, and an electronic device. The diode element includes a first electrode, a second electrode facing the first electrode, and an active layer between the first electrode and the second electrode, wherein the active layer includes a quantum dot having an energy bandgap of about 0.1 eV to about 1.5 eV and an organic semiconductor having a wider energy bandgap than the quantum dot, and a difference between a HOMO energy level of the quantum dot and a HOMO energy level of the organic semiconductor is less than 1.0 eV.

The present application provides a display panel and a display device. The display panel includes a substrate; an active switch, which is disposed on the substrate and includes a first active switch, a second active switch, and an indium gallium zinc oxide layer; a pixel, which is disposed on the substrate and coupled to the first active switch and includes a quantum dot light-emitting diode; and a light sensor, which is disposed on the substrate and coupled to the second active switch and includes a quantum dot light sensing layer; where the active switch includes a gate layer, a gate insulating layer, the indium gallium zinc oxide layer, an etch stop layer, a metal layer, and a pixel electrode layer which are sequentially arranged on the substrate.