An object of the present invention is to provide a curable composition comprising a fluorescent particle containing a perovskite compound, wherein a decrease in the quantum yield of a film formed by curing the curable composition due to heat can be suppressed; a film formed by curing the curable composition; and a laminated body and a display apparatus comprising the film. Provided are a curable composition comprising a fluorescent particle (A) containing a perovskite compound, a photopolymerizable compound (B), a photopolymerization initiator (C), and an antioxidant (D); a film formed by curing the curable composition; and a laminated body and a display apparatus comprising the film.

To provide a semiconductor film capable of realizing further enhancement of photoelectric conversion efficiency. The semiconductor film includes semiconductor nanoparticles and a compound represented by the following general formula (1), in which the compound represented by the general formula (1) is coordinated to the semiconductor nanoparticles. ##STR00001##
(In the general formula (1), X represents —SH, —COOH, —NH.sub.2, —PO(OH).sub.2, or —SO.sub.2(OH), A.sup.1 represents —S, —COO, —PO(OH)O, or —SO.sub.2(O), and n is an integer of 1 to 3. B.sup.1 represents Li, Na, or K.)

To provide a semiconductor film capable of realizing further enhancement of photoelectric conversion efficiency. The semiconductor film includes semiconductor nanoparticles and a compound represented by the following general formula (1), in which the compound represented by the general formula (1) is coordinated to the semiconductor nanoparticles. ##STR00001##
(In the general formula (1), X represents —SH, —COOH, —NH.sub.2, —PO(OH).sub.2, or —SO.sub.2(OH), A.sup.1 represents —S, —COO, —PO(OH)O, or —SO.sub.2(O), and n is an integer of 1 to 3. B.sup.1 represents Li, Na, or K.)

A light-emitting layer for a halide perovskite light-emitting device, a method for manufacturing the same and a perovskite light-emitting device using the same are disclosed. The light-emitting layer can be manufactured by forming a first nanoparticle thin film by coating, on a member, a solution comprising halide perovskite nanoparticles having a halide perovskite nanocrystalline structure. Thereby, a nanoparticle light emitter has therein a halide perovskite having a crystal structure in which FCC and BCC are combined; and can show high color purity. In addition, it is possible to improve the luminescence efficiency and luminance of a device by making perovskite as nanoparticles and then introducing the same into a light-emitting layer.

To provide a semiconductor film capable of realizing further enhancement of photoelectric conversion efficiency. The semiconductor film includes semiconductor nanoparticles and a compound represented by the following general formula (1), in which the compound represented by the general formula (1) is coordinated to the semiconductor nanoparticles.

##STR00001##

(In the general formula (1), X represents —SH, —COOH, —NH.sub.2, —PO(OH).sub.2, or —SO.sub.2(OH), A.sup.1 represents —S, —COO, —PO(OH)O, or —SO.sub.2(O), and n is an integer of 1 to 3. B.sup.1 represents Li, Na, or K.)

To provide a semiconductor film capable of realizing further enhancement of photoelectric conversion efficiency. The semiconductor film includes semiconductor nanoparticles and a compound represented by the following general formula (1), in which the compound represented by the general formula (1) is coordinated to the semiconductor nanoparticles.

##STR00001##

(In the general formula (1), X represents —SH, —COOH, —NH.sub.2, —PO(OH).sub.2, or —SO.sub.2(OH), A.sup.1 represents —S, —COO, —PO(OH)O, or —SO.sub.2(O), and n is an integer of 1 to 3. B.sup.1 represents Li, Na, or K.)

A light-emitting layer for a halide perovskite light-emitting device, a method for manufacturing the same and a perovskite light-emitting device using the same are disclosed. The light-emitting layer can be manufactured by forming a first nanoparticle thin film by coating, on a member, a solution comprising halide perovskite nanoparticles having a halide perovskite nanocrystalline structure. Thereby, a nanoparticle light emitter has therein a halide perovskite having a crystal structure in which FCC and BCC are combined; and can show high color purity. In addition, it is possible to improve the luminescence efficiency and luminance of a device by making perovskite as nanoparticles and then introducing the same into a light-emitting layer.

Described herein is a printed photovoltaic cell comprising an anode; an LEP printed cathode; and an LEP printed photovoltaic layer disposed between the anode and the cathode. The photovoltaic layer comprises a material with a perovskite structure having a chemical formula selected from ABX.sub.3 and A.sub.2BX.sub.6 and a thermoplastic resin comprising a copolymer of an alkylene monomer and a monomer having acidic side groups; and/or a copolymer of an alkylene monomer and an ethylenically unsaturated monomer comprising an epoxide; and/or a copolymer of an alkylene monomer, an ethylenically unsaturated monomer comprising an epoxide, and a monomer selected from a monomer having acidic side groups, a monomer having ester side groups and a mixture thereof. The printed cathode comprises: a thermoplastic resin; and electrically conductive metal particles. Also described herein is a method of producing the printed photovoltaic cell and an ink set for use in the method.

A photoelectric conversion element includes a first electrode, a first interfacial layer, a photoelectric conversion layer, and a second electrode in this order, wherein the photoelectric conversion layer includes quantum dots and a first organic compound, the first organic compound satisfies Formula (1), an electron affinity of a material used for the first interfacial layer, an electron affinity of the quantum dots, and an electron affinity of the first organic compound satisfy Formulas (2) and (3):

E2>E1  (1)

E1 [eV]: energy at short-wavelength end of optical wavelength region detected by the photoelectric conversion element

E2 [eV]: band gap of the first organic compound

E3<E4−0.2  (2)

E4−0.4<E5<E4  (3)

E3 [eV]: electron affinity of material used for the first interfacial layer

E4 [eV]: electron affinity of the quantum dots

E5 [eV]: electron affinity of the first organic compound.

A photoelectric conversion element includes a first electrode, a first interfacial layer, a photoelectric conversion layer, and a second electrode in this order, wherein the photoelectric conversion layer includes quantum dots and a first organic compound, the first organic compound satisfies Formula (1), an electron affinity of a material used for the first interfacial layer, an electron affinity of the quantum dots, and an electron affinity of the first organic compound satisfy Formulas (2) and (3):

E2>E1  (1)

E1 [eV]: energy at short-wavelength end of optical wavelength region detected by the photoelectric conversion element

E2 [eV]: band gap of the first organic compound

E3<E4−0.2  (2)

E4−0.4<E5<E4  (3)

E3 [eV]: electron affinity of material used for the first interfacial layer

E4 [eV]: electron affinity of the quantum dots

E5 [eV]: electron affinity of the first organic compound.