Provided are a condensed cyclic compound represented by Formula 1 and an organic light-emitting device including the same: ##STR00001##
wherein, in Formula 1, X.sub.1, A.sub.1, L.sub.11, a11, Ar.sub.11, Ar.sub.12, b11, R.sub.11, R.sub.12, c11, and c12 are the same as defined in the specification.

There is a polymeric photovoltaic cell (or solar cell) with inverted structure having an anode; an anodic buffer layer; an active layer having at least one photoactive organic polymer as electron-donor and at least one electron-accepting organic compound; a cathodic buffer layer; and a cathode. The at least one photoactive organic polymer is selected from conjugated polymers comprising an anthraditiophenic derivative having a general formula (I):

##STR00001##

The polymeric photovoltaic cell (or solar cell) with inverted structure shows good values of power conversion efficiency (PCE) (η) and can be advantageously used in the construction of photovoltaic modules (or solar modules), either on a rigid support or on a flexible support.

The present invention relates to a formulation containing at least one organic functional material and at least four different organic solvents, a first organic solvent A, a second organic solvent B, a third organic solvent C, and a fourth organic solvent D, wherein the first organic solvent A comprises a group, which is capable of receiving or giving a hydrogen bonding, the second organic solvent B has a boiling point in the range from 50 to 350° C., the third organic solvent C has a boiling point in the range from 100 to 300° C., and the fourth organic solvent D has a boiling point in the range from 200 to 400° C., is present in an amount from 0.01 to 1 vol.-% and has a viscosity of ≥15 mPas, the solubility of the at least one organic functional material in the second organic solvent B and in the fourth organic solvent D is ≥5 g/l, the boiling point of the third organic solvent C is at least 10° C. lower than the boiling point of the second organic solvent B; and the boiling point of the fourth organic solvent D is at least 10° C. higher than the boiling point of the second organic solvent B; as well as to electroluminescent devices prepared by using these formulations.

An aspect of the present disclosure is a method that includes combining a first organic salt (A.sup.1X.sup.1), a first metal salt (M.sup.1(X.sup.2).sub.2), a second organic salt (A.sup.2X.sup.3), a second metal salt (M.sup.2Cl.sub.2), and a solvent to form a primary solution, where A.sup.1X.sup.1 and M.sup.1(X.sup.2).sub.2 are present in the primary solution at a first ratio between about 0.5 to 1.0 and about 1.5 to 1.0, and A.sup.2X.sup.3 to M.sup.2Cl.sub.2 are present in the primary solution at a second ratio between about 2.0 to 1.0 and about 4.0 to 1.0. In some embodiments of the present disclosure, at least one of A.sup.1 or A.sup.2 may include at least one of an alkyl ammonium, an alkyl diamine, cesium, and/or rubidium.

There is provided a photodetector element including a first electrode layer; a second electrode layer; a photoelectric conversion layer provided between the first electrode layer and the second electrode layer; an electron transport layer provided between the first electrode layer and the photoelectric conversion layer; and a hole transport layer provided between the photoelectric conversion layer and the second electrode layer, in which the photoelectric conversion layer contains an aggregate of semiconductor quantum dots that contain a metal atom and contains a ligand coordinated to the semiconductor quantum dot, the hole transport layer contains an organic semiconductor, and the second electrode layer is formed of a metal material containing at least one metal atom selected from Au, Pt, Ir, Pd, Cu, Pb, Sn, Zn, Ti, W, Mo, Ta, Ge, Ni, Cr, or In. There is also provided an image sensor including the photodetector element.

A compound of Formula 1, as disclosed herein, is useful in an organic light emitting device and apparatuses including the same.

An optical element includes a photoelectric conversion film and an inorganic substance-containing film containing at least one selected from the group consisting of a metal nitride and a metal oxynitride, in which the photoelectric conversion film contains a quantum dot or at least one compound semiconductor selected from the group consisting of a III-V group compound semiconductor, a II-VI group compound semiconductor, and a IV-IV group compound semiconductor, and the optical density of an inorganic substance-containing film is 0.5 or more per 1.0 μm of a film thickness at a wavelength of 1,550 nm.

The invention relates to an optoelectronic and/or photoelectrochemical device including a conductive support layer, n-type semiconductor, a sensitizer or light-absorber layer, a hole transporting layer, a spacer layer and a back contact, wherein the n-type semiconductor is in contact with the sensitizer or light-absorber layer, the sensitizer or light-absorber layer includes a perovskite or metal halide perovskite material, the hole transporting layer is in direct contact with the sensitizer or light-absorber layer and includes an inorganic hole transporting material or inorganic p-type semiconductor, the spacer layer is between the hole transporting layer and the back contact and includes a material being different from the inorganic hole transporting material and the material of the back contact.

A photoelectric conversion element including: a first electrode; a hole blocking layer; a photoelectric conversion layer; a second electrode; a third electrode; a photoelectric conversion part in which the first electrode, the hole blocking layer, the photoelectric conversion layer, and the second electrode are stacked; an electrode contact part in which the second electrode is in contact with the third electrode; and a division part dividing the photoelectric conversion part and the electrode contact part, wherein an area (S1) where the second electrode is in contact with the third electrode in the electrode contact part and an area (S2) of the photoelectric conversion part satisfy expression (1) below: 1.0×10.sup.−5≤100×(S1/S2) . . . expression (1).

A photoelectric conversion device includes a first electrode and a second electrode facing each other, an organic photoelectric conversion layer between the first electrode and the second electrode, and a charge auxiliary layer between the first electrode and the organic photoelectric conversion layer. The organic photoelectric conversion layer is configured to absorb light in at least a portion of a wavelength spectrum of incident light and to convert the absorbed light into an electrical signal. The charge auxiliary layer includes a metal and an oxide. The oxide may be an oxide material that excludes silicon oxide such that the charge auxiliary layer does not include silicon oxide.