The present technology relates to, in a photoelectric conversion element using a photoelectric conversion film, the photoelectric conversion element and a method of manufacturing the same, a solid state image sensor, an electronic device, and a solar cell, for enabling improvement of quantum efficiency. The photoelectric conversion element includes two electrodes constituting an anode and a cathode, and a photoelectric conversion layer arranged between the two electrodes, and at least one electrode side of the two electrodes is doped with an impurity at impurity density of 1e16/cm3 or more in the photoelectric conversion layer. The present technology can be applied to, for example, a solid state image sensor, an electronic device, a solar cell and the like.

Narrow bandgap n-type small molecules are attracting attention in the near-infrared organic optoelectronics field, due to their easy tunable energy band with a molecular design flexibility. However, only a few reports demonstrate narrow bandgap non-fullerene acceptors (NFAs) that perform well in organic solar cells (OSCs), and the corresponding benefits of NFA photodiodes have not been well investigated in organic photodetectors (OPDs). Here, the ultra-narrow bandgap NFAs CO1-4F, CO1-4Cl and o-IO1 were designed and synthesized for the achieved efficient near-infrared organic photodiodes such as solar cells and photodetectors. Designing an asymmetrical CO1-4F by introducing two different π-bridges including alkylthienyl and alkoxythienyl units ultimately provides an asymmetric A-D′-D-D″-A molecular configuration. This enables a delicate modulation in energy band structure as well as maintains an intense intramolecular charge transfer characteristic of the excited state.

Disclosed herein are exciton-blocking treatments for buffer layers used in organic photosensitive optoelectronic devices. More specifically, the organic photosensitive optoelectronic devices described herein include at least one self-assembled monolayer disposed on the surface of an anode buffer layer. Methods of preparing these devices are also disclosed. The present disclosure further relates to methods of forming at least one self-assembled monolayer on a substrate.

A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and an upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.

The present invention aims to provide a solar cell having high photoelectric conversion efficiency that is less likely to decrease even under prolonged application of a voltage. Provided is a solar cell including a cathode, a photoelectric conversion layer, a diffusion prevention layer, and an anode in the stated order, the cathode being a transparent electrode, the anode containing at least one selected from the group consisting of aluminum, copper, antimony, and molybdenum, the photoelectric conversion layer containing an organic-inorganic perovskite compound represented by the formula AMX wherein A represents an organic base compound and/or an alkali metal, M represents a lead or tin atom, and X represents a halogen atom, the diffusion prevention layer being a diffusion prevention layer that contains molybdenum, tungsten, tantalum, niobium, zirconium, hafnium, or an alloy of two or more thereof and has a thickness of 5 to 30 nm, a diffusion prevention layer that contains an oxide containing titanium, gallium, zinc, tin, indium, antimony, molybdenum, tungsten, vanadium, chromium, nickel, or lead, a diffusion prevention layer that contains a nitride containing titanium, vanadium, chromium, niobium, tantalum, molybdenum, zirconium, or hafnium and has a thickness of 5 to 50 nm, or a diffusion prevention layer that contains graphite and has a thickness of 2 nm to 50 nm.

A hybrid fiber for detection of UV light is described. The hybrid fiber includes a conductor, a first layer, a photoactive layer, a second layer, and a transparent electrode. The conductor includes a conductive material. The first layer includes a first material deposited onto the conductor. The first material is configured to transport holes and block electrons. The photoactive layer includes a photoactive material coating the first layer. The photoactive material includes a first submaterial and a second submaterial. The second layer includes a second material deposited onto the photoactive layer. The second material is configured to block holes and transport electrons. The transparent electrode includes a transparent electrode material deposited onto the second layer.

An imaging apparatus includes a first electrode, a second electrode, and a photoelectric conversion layer located between the first electrode and the second electrode. The photoelectric conversion layer contains a first material, a second material, and a third material. The first material is a fullerene or a fullerene derivative. The second material is a donor-like organic semiconductor material. The average absorption coefficient in the visible light wavelength range of the third material is less than the average absorption coefficient in the visible light wavelength range of the first material.

Small organic molecule semi-conducting chromophores containing a halogen-substituted core structure are disclosed. Such compounds can be used in organic heterojunction devices, such as organic small molecule solar cells and transistors.

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

The present invention relates to compounds of the formula (1) which are suitable for use in electronic devices, in particular organic electroluminescent devices, and to electronic devices which comprise these compounds.