A display device is provided. The display device includes a first substrate, a first detection electrode on the first substrate, a first bank including an opening that exposes the first detection electrode, a photosensitive layer on the first detection electrode, a second detection electrode on the photosensitive layer, a first electrode on the second detection electrode, a second bank including an opening that exposes the first electrode, a light emitting layer on the first electrode, a second electrode on the light emitting layer, a first optical system between the second detection electrode and the first electrode, and a second optical system on the second electrode, wherein the first optical system and the second optical system overlap the photosensitive layer in a thickness direction of the display device.

A photosensor including: a first electrode; a second electrode; a photoelectric conversion layer between the first electrode and the second electrode; a first charge blocking layer between the first electrode and the photoelectric conversion layer; a second charge blocking layer between the second electrode and the photoelectric conversion layer; a voltage supply circuit supplying a voltage to the second electrode such that an electric field directed from the second electrode toward the first electrode is generated in the photoelectric conversion layer; and a transistor. The first charge blocking layer suppresses movement of holes from the photoelectric conversion layer to the first electrode and movement of electrons from the first electrode to the photoelectric conversion layer, and the second charge blocking layer suppresses movement of electrons from the photoelectric conversion layer to the second electrode and movement of holes from the second electrode to the photoelectric conversion layer.

An imaging apparatus includes a semiconductor substrate; a first electrode; a second electrode; a photoelectric conversion layer disposed between the first electrode and the second electrode, and including a donor organic semiconductor material and an acceptor organic semiconductor material; a charge accumulation node positioned within the semiconductor substrate and electrically connected to the second electrode; and a first blocking layer disposed between the first electrode and the photoelectric conversion layer. The photoelectric conversion layer has an ionization potential of lower than or equal to 5.3 eV. The first blocking layer has an electron affinity lower than an electron affinity of the acceptor organic semiconductor material included in the photoelectric conversion layer. The imaging apparatus has spectral sensitivity in a near-infrared light region having wavelengths of greater than or equal to 650 nm and less than or equal to 3000 nm.

A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and—an upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.

The present technology relates to a photoelectric conversion element, a measuring method of the same, a solid-state imaging device, an electronic device, and a solar cell capable of further improving a quantum efficiency in a photoelectric conversion element using a photoelectric conversion layer including an organic semiconductor material. The photoelectric conversion element includes two electrodes forming a positive electrode (11) and a negative electrode (14), at least one charge blocking layer (13, 15) arranged between the two electrodes, and a photoelectric conversion layer (12) arranged between the two electrodes. The at least one charge blocking layer is an electron blocking layer (13) or a hole blocking layer (15), and a potential of the charge blocking layer is bent. The present technology is applied to, for example, a solid-state imaging device, a solar cell, and the like having a photoelectric conversion element.

A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and- an upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.

An organic light-emitting device includes: a first electrode; a second electrode; an organic layer between the first electrode and the second electrode and including an emission layer; and at least one organometallic compound represented by Formula 1. The organic light-emitting device including the organometallic compound may have a low driving voltage, a high luminance, a high efficiency, and a long lifespan: ##STR00001##

Provided is an organic compound represented by the general formula [1]: ##STR00001## in the formula [1], R.sub.1 to R.sub.18 each represent a hydrogen atom, an alkyl group having 1 or more and 8 or less carbon atoms, an aromatic hydrocarbon group having 6 or more and 18 or less carbon atoms, or an aromatic heterocyclic group having 3 or more and 15 or less carbon atoms, and may be identical to or different from each other, and the plurality of R.sub.17's or the plurality of R.sub.18's may be identical to or different from each other, and the R.sub.1 to the R.sub.18 may each further have a substituent selected from a halogen atom and an alkyl group having 1 or more and 8 or less carbon atoms, and n represents an integer of 1 or more and 3 or less.

An organometallic compound represented by Formula I, an organic light-emitting device including the same, and a diagnostic composition including the organometallic compound. ##STR00001##

An imaging device includes: pixels arranged one-dimensionally or two-dimensionally, each of the pixels including an electrode that is electrically connected to the other pixels, a charge capturing unit that is separated from the other pixels, and a photoelectric conversion layer that is located between the electrode and the charge capturing unit, the photoelectric conversion layer being continuous among the pixels. The photoelectric conversion layer contains semiconductor carbon nanotubes, and one of a first substance and a second substance, the first substance having an electron affinity larger than that of the semiconducting carbon nanotubes, the second substance having a ionization energy smaller than that of the semiconductor carbon nanotubes.