The present disclosure discloses metal oxide nanoparticle ink, a method of preparing the same, a metal oxide nanoparticle thin film manufactured using the same, and a photoelectric device using the same. The method of preparing metal oxide nanoparticle ink according to an embodiment of the present disclosure includes a step of, using a ligand solution including a metal oxide and an organic ligand, synthesizing a first nanoparticle that is a metal oxide nanoparticle surrounded with the organic ligand; a step of preparing a dispersion solution by dispersing the first nanoparticle in a solvent; a step of preparing a second nanoparticle by mixing the dispersion solution and a pH-adjusted alcohol solvent and then performing ultrasonication treatment to remove the organic ligand surrounding the first nanoparticle; and a step of preparing metal oxide nanoparticle ink by dispersing the second nanoparticle in a dispersion solvent.

The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.

A perovskite material that has a perovskite crystal lattice having a formula of C.sub.xM.sub.yX.sub.z, where x, y, and z, are real numbers, and 1,4-diammonium butane cation cations disposed within or at a surface of the perovskite crystal lattice. C comprises one or more cations selected from the group consisting of Group 1 metals, Group 2 metals, ammonium, formamidinium, guanidinium, and ethene tetramine. M comprises one or more metals each selected from the group consisting of Be, Mg, Ca, Sr, Ba, Fe, Cd, Co, Ni, Cu, Ag, Au, Hg, Sn, Ge, Ga, Pb, In, Tl, Sb, Bi, Ti, Zn, Cd, Hg, and Zr and combinations thereof. X comprises one or more anions each selected from the group consisting of halides, sulfides, selenides, and combinations thereof.

A perovskite material that has a perovskite crystal lattice having a formula of C.sub.xM.sub.yX.sub.z, and alkyl polyammonium cations disposed within or at a surface of the perovskite crystal lattice; wherein x, y, and z, are real numbers; C comprises one or more cations selected from the group consisting of Group 1 metals, Group 2 metals, ammonium, formamidinium, guanidinium, and ethene tetramine; M comprises one or more metals each selected from the group consisting of Be, Mg, Ca, Sr, Ba, Fe, Cd, Co, Ni, Cu, Ag, Au, Hg, Sn, Ge, Ga, Pb, In, Tl, Sb, Bi, Ti, Zn, Cd, Hg, and Zr, and combinations thereof and X comprises one or more anions each selected from the group consisting of halides, pseudohalides, chalcogenides, and combinations thereof.

A device includes a first substrate, a silicon layer supported by the first substrate, and an active glass layer with a layer including a crystal material with a chemical formula ABX.sub.3 supported by a glass substrate. The active glass layer is stacked on the first substrate such that the layer including the crystal material with a chemical formula ABX.sub.3 and silicon layer are arranged between the first substrate and the glass substrate.

A device includes a first substrate, a silicon layer supported by the first substrate, and an active glass layer with a layer including a crystal material with a chemical formula ABX.sub.3 supported by a glass substrate. The active glass layer is stacked on the first substrate such that the layer including the crystal material with a chemical formula ABX.sub.3 and silicon layer are arranged between the first substrate and the glass substrate.

The present disclosure may provide semiconductor perovskite layers and method of making thereof. In some cases, the perovskite layer may comprise a composition of MA.sub.n1FA.sub.n2Cs.sub.n3PbX.sub.3. MA may be methylammonium, FA may be formamidinium, n1, n2, and n3 may independently be greater than 0 and less than 1, and n1 + n2 + n3 may equal 1.

Photovoltaic devices, and methods of fabricating photovoltaic devices. The photovoltaic devices may include a first electrode, at least one quantum dot layer, at least one semiconductor layer, and a second electrode. The first electrode may include a layer including Cr and one or more silver contacts.

Disclosed are a solar cell cutting and passivation integrated processing method and a solar cell prepared using the method. The solar cell includes a substrate (1), a front electrode layer (2), a light absorption layer (3) and a back electrode layer (4) from bottom to top. Before laser structured cutting is performed for the back electrode layer (4), a protective layer (5) is disposed on a surface of the back electrode layer (4), and then laser structured cutting is performed for the back electrode layer (4), or the back electrode layer (4) and the light absorption layer (3) simultaneously through the protective layer (5) to obtain a corresponding structured trench (P3) while the protective layer (5) is kept from being cut by laser, and a material of the protective layer (5) is partially molten due to a localized high temperature generated by the laser processing in a laser structured cutting process and infiltrates into an underlying corresponding structured trench (P3). In this method, at the time of performing laser cutting processing, passivation is performed for newly-processed trench at the same time, reducing production costs, saving processing time. Further, the trench edges after cutting are repaired to improve the morphology of the processed trench, improving the stability of the cell and extending the service life of the cell.

A method for manufacturing a photovoltaic device. The method comprises fabricating a first photovoltaic device portion with a first photoactive layer having a first face comprising a first perovskite precursor material; fabricating a second photovoltaic device portion with a second photoactive layer having a second face comprising a second perovskite material or a second perovskite precursor material; arranging the first photovoltaic device portion and the second photovoltaic device portion such that the first face is in contact with the second face; and compressing the first photovoltaic device portion and the second photovoltaic device portion at a pressure sufficient to fuse the first perovskite precursor material to the second perovskite material or the second perovskite precursor material.