Patent classifications
H10K30/57
SOLAR CELL MODULE, ELECTRONIC DEVICE, AND POWER SUPPLY MODULE
A solar cell module includes a first substrate and a plurality of photoelectric conversion elements disposed on the first substrate. Each of the plurality of photoelectric conversion elements includes a first electrode, an electron transport layer, a perovskite layer, a hole transport layer, and a second electrode. In at least two of the photoelectric conversion elements adjacent to each other, the hole transport layers are extended continuous layers; and the first electrodes, the electron transport layers, and the perovskite layers in the at least two of the photoelectric conversion elements adjacent to each other are separated by the hole transport layer. The hole transport layer includes, as hole transport material, a polymer having a weight average molecular weight of 2,000 or more or a compound having a molecular weight of 2,000 or more.
SOLAR CELL COMPRISING A METAL-OXIDE BUFFER LAYER AND METHOD OF FABRICATION
A perovskite-based solar cell comprising a transparent electrode disposed on a buffer layer that protects the perovskite from damage during the deposition of the electrode is disclosed. The buffer material is deposited using either low-temperature atomic-layer deposition, chemical-vapor deposition, or pulsed chemical-vapor deposition. In some embodiments, the perovskite material is operative as an absorption layer in a multi-cell solar-cell structure. In some embodiments, the perovskite material is operative as an absorption layer in a single-junction solar cell structure.
PROCESS OF FORMING A PHOTOACTIVE LAYER OF A PEROVSKITE PHOTOACTIVE DEVICE
A process of forming a photoactive layer of a planar perovskite photoactive device comprising: applying at least one layer of a first precursor solution to a substrate to form a first precursor coating on at least one surface of the substrate, the first precursor solution comprising MX.sub.2 and AX dissolved in a first coating solvent, wherein the molar ratio of MX.sub.2:AX=1:n with 0<n<1; and applying a second precursor solution to the first precursor coating to convert the first precursor coating to a perovskite layer AMX.sub.3, the second precursor solution comprising AX dissolved in a second coating solvent, the first precursor solution reacting with the second precursor solution to form a perovskite layer AMX.sub.3 on the substrate, wherein A comprises an ammonium group or other nitrogen containing organic cation, M is selected from Pb, Sn, Ge, Ca, Sr, Cd, Cu, Ni, Mn, Co, Zn, Fe, Mg, Ba, Si, Ti, Bi, or In, X is selected from at least one of F, Cl, Br or I.
VISIBLY TRANSPARENT, NEAR-INFRARED-ABSORBING BORON-CONTAINING PHOTOVOLTAIC DEVICES
Visibly transparent photovoltaic devices are disclosed, such as those are transparent to visible light but absorb near-infrared light and/or ultraviolet light. The photovoltaic devices make use of transparent electrodes and near-infrared absorbing visibly transparent photoactive compounds, optical materials, and/or buffer materials.
METAL OXIDE NANOPARTICLE INK, METHOD OF PREPARING THE SAME, METAL OXIDE NANOPARTICLE THIN FILM MANUFACTURED USING THE SAME, AND PHOTOELECTRIC DEVICE USING THE SAME
The present disclosure discloses metal oxide nanoparticle ink, a method of preparing the same, a metal oxide nanoparticle thin film manufactured using the same, and a photoelectric device using the same. The method of preparing metal oxide nanoparticle ink according to an embodiment of the present disclosure includes a step of, using a ligand solution including a metal oxide and an organic ligand, synthesizing a first nanoparticle that is a metal oxide nanoparticle surrounded with the organic ligand; a step of preparing a dispersion solution by dispersing the first nanoparticle in a solvent; a step of preparing a second nanoparticle by mixing the dispersion solution and a pH-adjusted alcohol solvent and then performing ultrasonication treatment to remove the organic ligand surrounding the first nanoparticle; and a step of preparing metal oxide nanoparticle ink by dispersing the second nanoparticle in a dispersion solvent.
METAL OXIDE NANOPARTICLE INK, METHOD OF PREPARING THE SAME, METAL OXIDE NANOPARTICLE THIN FILM MANUFACTURED USING THE SAME, AND PHOTOELECTRIC DEVICE USING THE SAME
The present disclosure discloses metal oxide nanoparticle ink, a method of preparing the same, a metal oxide nanoparticle thin film manufactured using the same, and a photoelectric device using the same. The method of preparing metal oxide nanoparticle ink according to an embodiment of the present disclosure includes a step of, using a ligand solution including a metal oxide and an organic ligand, synthesizing a first nanoparticle that is a metal oxide nanoparticle surrounded with the organic ligand; a step of preparing a dispersion solution by dispersing the first nanoparticle in a solvent; a step of preparing a second nanoparticle by mixing the dispersion solution and a pH-adjusted alcohol solvent and then performing ultrasonication treatment to remove the organic ligand surrounding the first nanoparticle; and a step of preparing metal oxide nanoparticle ink by dispersing the second nanoparticle in a dispersion solvent.
Method for single crystal growth of photovoltaic perovskite material and devices
Systems and methods for perovskite single crystal growth include using a low temperature solution process that employs a temperature gradient in a perovskite solution in a container, also including at least one small perovskite single crystal, and a substrate in the solution upon which substrate a perovskite crystal nucleates and grows, in part due to the temperature gradient in the solution and in part due to a temperature gradient in the substrate. For example, a top portion of the substrate external to the solution may be cooled.
PHOTOVOLTAIC STRUCTURE AND METHOD OF FABRICATION
A photovoltaic device includes one or more features that taken alone or in combination enhance its efficiency. Some embodiments may comprise a tandem solar device in which a top PV cell is fabricated upon a front transparent substrate, that also serves as the top encapsulating substance. The top PV cell including the front encapsulating substance is then bonded (e.g., using adhesive) to a bottom PV cell in order to complete the tandem device. Using the same transparent, insulating element as both front encapsulating substance and a substrate for fabricating the top PV cell, obviates to the need to provide a separate structure (with resulting interfaces) to perform the latter role. For tandem and non-tandem PV devices, a Through-Substrate-Via (TSV) structure may extend through an insulating substrate in order to provide contact with an opposite side (e.g., back electrode). Embodiments may find particular use in fabricating shingled perovskite photovoltaic solar cells.
Solid-state image-pickup device, method of manufacturing the same, and electronic apparatus
Solid-state image-pickup devices (10), including: at least one first photoelectric conversion section (11B, 11R) disposed in a substrate (11); a second photoelectric conversion section (11G) disposed over the substrate and including an organic photoelectric conversion layer (16); and an ultraviolet protective film (18) that covers a light incident surface of the organic photoelectric conversion layer, and methods of producing the same.
MULTI-JUNCTION OPTOELECTRONIC DEVICE COMPRISING DEVICE INTERLAYER
The invention relates to a multi-junction device comprising a) a first photoactive region comprising a layer of a first photoactive material, b) a second photoactive region comprising a layer of a second photoactive material, and c) a charge recombination layer disposed between the first and second photoactive regions, wherein the charge recombination layer comprises a charge recombination layer material, wherein one of the first and second photoactive materials comprises at least one A/M/X material; wherein the other of the first and second photoactive materials comprises at least one A/M/X material or a compound which is a photoactive semiconductor other than an A/M/X material; wherein each A/M/X material is a crystalline compound of formula (I) [A].sub.a[M].sub.b[X].sub.c wherein: [A] comprises one or more A cations; [M] comprises one or more M cations which are metal or metalloid cations; [X] comprises one or more X anions; a is a number from 1 to 6; b is a number from 1 to 6; and c is a number from 1 to 18; and wherein the charge recombination layer material has a refractive index, η(λ), at a wavelength, λ, of at least 2, wherein λ is a wavelength of from 500 nm to 1200 nm.