An image sensor includes pixel regions separated by an isolation region and receiving incident light, color filters respectively disposed on a surface of the semiconductor substrate corresponding to the pixel regions, a cover insulating layer disposed on the surface of the semiconductor substrate and covering the color filters, first transparent electrodes disposed on the cover insulating layer and spaced apart to respectively overlap the color filters, an isolation pattern disposed on the cover insulating layer between the first transparent electrodes and having a trench spaced apart from the first transparent electrodes, a drain electrode disposed in the trench of the isolation pattern, and an organic photoelectric layer and a second transparent electrode sequentially disposed on the first transparent electrodes and the isolation pattern.

A photocurrent multiplication device having an external quantum efficiency of 100% or more includes at least one first electrode, at least one second electrode facing the at least one first electrode, and a photoelectric conversion film that is located between the at least one first electrode and the at least one second electrode and that includes a donor material and an acceptor material. The photoelectric conversion film at least partially has a sea-island structure in which the donor material is interspersed in the photoelectric conversion film.

A photocurrent multiplication device having an external quantum efficiency of 100% or more includes at least one first electrode, at least one second electrode facing the at least one first electrode, and a photoelectric conversion film that is located between the at least one first electrode and the at least one second electrode and that includes a donor material and an acceptor material. The photoelectric conversion film at least partially has a sea-island structure in which the donor material is interspersed in the photoelectric conversion film.

The present invention relates to a working electrode (1a) for a photovoltaic device, comprising a light absorbing layer (3) and a conductive layer (6) arranged in electrical contact with the light absorbing layer (3), and the light absorbing layer (3) comprises a light absorbing photovoltaic material consisting of a plurality of dye molecules. The light absorbing layer (3) is formed by a layer of a plurality of clusters (7), whereby each cluster (7) is formed by dye molecules and each dye molecule in the cluster (7) is bonded to its adjacent dye molecules.

The present invention relates to a working electrode (1a) for a photovoltaic device, comprising a light absorbing layer (3) and a conductive layer (6) arranged in electrical contact with the light absorbing layer (3), and the light absorbing layer (3) comprises a light absorbing photovoltaic material consisting of a plurality of dye molecules. The light absorbing layer (3) is formed by a layer of a plurality of clusters (7), whereby each cluster (7) is formed by dye molecules and each dye molecule in the cluster (7) is bonded to its adjacent dye molecules.

Various graphene-based photodetectors are disclosed. An example photodetector device may include: a substrate; a first antenna component fabricated on the substrate, the first antenna component comprising one or more antenna electrodes; a second antenna component fabricated on the substrate, the second antenna component comprising one or more antenna electrodes; a source region coupled to the first antenna component and the substrate; and a drain region coupled to the second antenna component and the substrate; wherein the one or more antenna electrodes in the first antenna component and the second antenna component are made of graphene.

An image sensor includes a substrate including a first surface and a second surface, a first transmission gate electrode on the first surface of the substrate, a storage node on the first surface of the substrate and including a first storage gate electrode isolated from direct contact with the first transmission gate electrode, a dielectric layer on the first storage gate electrode, and a semiconductor layer on the dielectric layer. The image sensor may include a first cover insulating layer on the semiconductor layer and vertically overlapping the first transmission gate electrode, and an organic photoelectric conversion layer on an upper surface of the semiconductor layer and an upper surface of the first cover insulating layer.

A photoelectric conversion device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode and configured to absorb light in at least one part of a wavelength spectrum of light and to convert it into an electric signal, and an inorganic nanolayer between the first electrode and the photoelectric conversion layer and including a lanthanide element, calcium (Ca), potassium (K), aluminum (Al), or an alloy thereof. An organic CMOS image sensor may include the photoelectric conversion device. An electronic device may include the organic CMOS image sensor.

A display panel and a fabricating method thereof are provided. The display panel includes: a substrate; and an array of pixels on the substrate, each pixel having a sub-pixel region and a photosensitive region, wherein the sub-pixel region includes a light emitting structure; the photosensitive region is configured to sense light emitted by the light emitting structure and reflected by a finger; and the photosensitive region includes a photosensitive thin film transistor having a vertical channel with respect to the substrate.

Ultraviolet (UV), Terahertz (THZ) and Infrared (IR) radiation detecting and sensing systems using graphene nanoribbons and methods to making the same. In an illustrative embodiment, the detector includes a substrate, single or multiple layers of graphene nanoribbons, and first and second conducting interconnects each in electrical communication with the graphene layers. Graphene layers are tuned to increase the temperature coefficient of resistance to increase sensitivity to IR radiation. Absorption over a wide wavelength range of 200 nm to 1 mm are possible based on the two alternative devices structures described within. These two device types are a microbolometer based graphene film where the TCR of the layer is enhanced with selected functionalization molecules. The second device structure consists of a graphene nanoribbon layers with a source and drain metal interconnect and a deposited metal of SiO2 gate which modulates the current flow across the phototransistor detector.