A photodetector including graphene and poly(3-hexylthiopene) (P3HT) nanowires is claimed. A method of making the hybrid photodetector is also claimed.

Provided is a manufacturing method of a display including a vertical organic light-emitting transistor in which a wider light-emitting area is secured while manufacturing time and manufacturing cost are suppressed. In the manufacturing method of the display including the vertical organic light-emitting transistor, a gate electrode layer of the vertical organic light-emitting transistor and one of current-carrying electrode layers of a thin-film transistor connected to the gate electrode layer of the vertical organic light-emitting transistor are formed integrally in the same layer.

A composite for sensing heat or infrared light includes a block copolymer including a first structural group represented by Chemical Formula 1, a second structural group represented by Chemical Formula 2, and a third structural group represented by Chemical Formula 3; and a polyvalent metal ion that is coordinated with a side chain group of the block copolymer. ##STR00001##

The invention describes a device for emitting or detecting electromagnetic radiation. The device has a first and a second electrode which are connected to each other via an electrically conductive nanostructure. The electrically conductive nanostructure is configured to receive electrons and holes from the first and second electrode or transport same to the first and second electrode. In addition, the device has a radiation molecule arranged at a circumferential surface of the electrically conductive nanostructure. The radiation molecule is configured to absorb electrons and holes or electromagnetic radiation and emit the electromagnetic radiation with recombination of electrons absorbed and holes absorbed, or emit electrons and holes based on the electromagnetic radiation absorbed. The electrically conductive nanostructure is, in the region of a circumferential surface, surrounded at least partly by the first or second electrode at an end arranged at the first or second electrode in order to provide electrical contact of the first or second electrode and the electrically conductive nanostructure.

The present disclosure relates to the field of display, in particular to a thin film transistor, a method for preparing the same, and a display device. The thin film transistor of the present disclosure includes a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, a drain electrode, and a photoelectric conversion layer in contact with the gate electrode. The photoelectric conversion layer is configured to generate an induced potential in a light environment.

A photo-capacitance sensor includes an input surface and one or more light sources arranged to illuminate a portion of the input surface. The photo-capacitance sensor also includes an array of photo-capacitors arranged to receive light from the one or more light sources which is reflected from an object in contact with, or proximate to, the illuminated portion of the input surface. The array of photo-capacitors is configured for detecting a reflective pattern of the object.

An electronic device includes a substrate, a gate electrode, a dielectric layer, a source electrode, a drain electrode, and a semiconducting layer formed from an organic semiconductor compound and a photo-responsive polymer. The resistance can be switched to a low state by irradiation, and can be switched to a high state by applying a gate bias voltage. This can be useful for a memory device.

A photoelectric conversion device including a photoelectric conversion module, wherein the photoelectric conversion module includes a carbon nanotube structure and a cover structure, the carbon nanotube structure includes a carbon nanotube, the carbon nanotube includes two metallic carbon nanotube segments and one semiconducting carbon nanotube segment between the two metallic carbon nanotube segments, the cover structure covers only a portion of the semiconducting carbon nanotube segment, the part area is a covered area.

An optical sensor includes a semiconductor layer including a first region, a second region, and a third region between the first region and the second region, a first electrode, a photoelectric conversion layer between the third region and the first electrode, and voltage supply circuitry applying a voltage between the first electrode and the first region to apply a bias voltage to the photoelectric conversion layer. The photoelectric conversion layer has a characteristic showing how a density of current flowing through the photoelectric conversion layer varies with the bias voltage applied to the photoelectric conversion layer. The characteristic includes a third voltage range where an absolute value of a rate of change of the current density relative to the bias voltage is less than in a first voltage range and a second voltage range, the third voltage range being between the first voltage range and the second voltage range.

A method for manufacturing a HEMT/HHMT device based on CH.sub.3NH.sub.3PbI.sub.3 material are provided. The method includes: selecting an Al.sub.2O.sub.3 substrate; manufacturing a source electrode and a drain electrode; forming a first electron transport layer on a surface of the source electrode, a surface of the drain electrode, and a surface of the Al.sub.2O.sub.3 substrate not covered by the source electrode and the drain electrode; manufacturing CH.sub.3NH.sub.3PbI.sub.3 material on a surface of the first electron transport layer to form a first light absorbing layer; and forming a gate electrode on a surface of the first light absorbing layer to complete the manufacture of the HEMT device.