An organic device is disclosed. In an embodiment the organic device includes an organic component designed to emit and/or detect radiation, wherein the organic component has a first layer stack and a radiation passage surface and an organic protection diode having a second layer stack, wherein the organic protection diode is arranged directly after the organic component in a stacking direction (Z), and wherein the organic protection diode is designed to protect the organic component from an electrostatic discharge and/or from a polarity reversal of the organic component.

The present invention refers to a three terminal tandem solar generation unit (1) comprising: —a first absorbing layer (7) made of a perovskite type compound, —a second absorbing layer (11, 11′), —a first and a second interdigitated front contacts (5a, 5b) arranged on the front side of the first absorbing layer (7), the first front contact (5a) having a first polarity and the second front contact (5b) having a second polarity, —a back contact (17, 17′) having the first or the second polarity arranged on the back side of the second absorbing layer (11, 11′), —an interface layer (9, 90, 9′, 90′) arranged between the first (7) and the second (11, 11′) absorbing layers comprising a first semiconductor sub-layer (9a, 90a, 9a′, 90a′) doped according to the first polarity and a second sub-layer (9b, 90b, 9b′, 90b′) doped according to the second polarity and configured for enabling carriers associated with a polarity different than the polarity of the back contact (17, 17′) to be transferred from the second absorbing layer (11, 11′) to the first absorbing layer (7) to be collected by the front contact (5a, 5b) having a polarity different than the polarity of the back contact (17, 17′).

The purpose of the present invention is to prevent a decrease in light reflection characteristic and an increase in electric resistance due to oxidation of silver in a semiconductor device including an optical sensor in which silver is used for an anode of a photoconductive film. The present invention has a following structure to solve the problem: A semiconductor device includes a thin film transistor formed on a substrate 100. An electrode connected electrically to the thin film transistor is formed of a silver film 128. A first indium tin oxide (ITO) film 129 is formed on the silver film 128. An alumina (AlOx) film 130 is formed on the first ITO film 129.

There is provided a solid-state image pickup device that includes a functional region provided with an organic film, and a guard ring surrounding the functional region.

A photoelectric conversion element according to the disclosure includes: a first electrode and a second electrode that are disposed to face each other; and a photoelectric conversion layer that is provided between the first electrode and the second electrode, and contains at least one kind of polycyclic aromatic compound represented by any one of the following general formula (1), the following general formula (2), and the following general formula (3): ##STR00001##

The present disclosure is directed to perovskite-based solar cell device structures and compositions comprising one or more near infrared sensitive semiconducting materials. The near infrared sensitive semiconducting materials can extend the photoresponse spectra of the devices to the near infrared region, thereby improving the power conversion efficiency of the solar cell.

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode that is disposed to be opposed to the first electrode; and an organic photoelectric conversion layer that is provided between the first electrode and the second electrode and includes one organic semiconductor material. The organic photoelectric conversion layer includes at least one or more domains (D1, D2, and D3) in a horizontal cross section. The one or more domains (D1, D2, and D3) are each formed by using the one organic semiconductor material.

A solar cell according to the present disclosure includes a first electrode, a second electrode, a photoelectric conversion layer located between the first electrode and the second electrode, and a first electron transport layer located between the first electrode and the photoelectric conversion layer, in which at least one selected from the group consisting of the first electrode and the second electrode is translucent, the photoelectric conversion layer contains a perovskite compound composed of a monovalent cation, a Sn cation, and a halogen anion, and the first electron transport layer contains a niobium oxide halide.

A photovoltaic collector includes a photovoltaic cell including a first conduction layer, a second conduction layer, and a photovoltaic layer absorbing incident light and generating electric current. The photovoltaic layer is electrically connected to the first conduction layer on a first side of the photovoltaic layer and to the second conduction layer on a second side opposite to the first side. The first conduction layer is an ultrastatic conducting layer being made using ultrasonic spray technology. The photovoltaic collector further includes a plurality of connection units disposed along on an outer peripheral edge of the photovoltaic collector. Each connection unit is adapted to connect with an adjacent connection unit of an adjacent photovoltaic collector to tessellate and electrically interconnect and interlock the photovoltaic collector with a plurality of adjacent photovoltaic collectors without requiring additional cable wires.

Hole transporting material obtained through a process comprising: reacting at least one heteropoly acid containing at least one transition metal belonging to group 5 or 6 of the Periodic Table of the Elements; with an equivalent amount of at least one salt or one complex of a transition metal belonging to group 5 or 6 of the Periodic Table of the Elements with an organic anion, or with an organic ligand;
in the presence of at least one organic solvent selected from alcohols, ketones, esters. Said hole transporting material can be advantageously used in the construction of photovoltaic devices (or solar devices) such as, for example, photovoltaic cells (or solar cells), photovoltaic modules (or solar modules), either on a rigid support, or on a flexible support. Furthermore, said hole transporting material can be advantageously used in the construction of Organic Light Emitting Diodes (OLEDs), or of Organic Field Effect Transistors (OFETs). In particular, said hole transporting material can be advantageously used in the construction of a polymer photovoltaic cell (or solar cell) with an inverted structure.