The invention relates to a photovoltaic module comprising a glass substrate or a substrate made of polymer material and at least two photovoltaic cells, a first photovoltaic cell and a second photovoltaic cell, on said substrate.

Provided is a multilayer imaging device capable of both securing a wide sensitive region and securing an accumulated amount of charges. An imaging device according to an embodiment comprises a pixel, the pixel including a photoelectric conversion layer (15); a first electrode (11) positioned close to a first surface of the photoelectric conversion layer and electrically connected to the photoelectric conversion layer; a second electrode (16) positioned on a second surface opposite to the first surface of the photoelectric conversion layer; a charge accumulation electrode (12) disposed close to the first surface of the photoelectric conversion layer and spaced apart from the first electrode in a direction parallel to the first surface; and a third electrode (200) disposed at a position to have a portion overlapping a gap between the first electrode and the charge accumulation electrode in a direction perpendicular to the first surface.

According to an aspect, a detection device includes: a substrate; a plurality of first electrodes arranged on a first principal surface of the substrate; a plurality of photodiodes provided corresponding to the first electrodes, and each including a first carrier transport layer, an active layer, and a second carrier transport layer; a second electrode provided across the photodiodes; a backlight provided on a second principal surface side opposite to the first principal surface of the substrate; a plurality of light-blocking layers provided between the backlight and the photodiodes; and a light-transmitting area formed between adjacent light-blocking layers of the light-blocking layers.

A photoelectric conversion panel includes a TFT, a photodiode disposed at an upper layer than the TFT, a first organic film formed at an upper layer than the photodiode, a first inorganic insulating film covering at least a part of the first organic film, and a second organic film covering at least a part of the first inorganic insulating film. The first inorganic insulating film includes a first hole portion connecting the first organic film and the second organic film, and a first moisture-proof portion at least a part of which is disposed at a side of the photodiode with respect to the first hole portion. The first moisture-proof portion penetrates the first organic film.

A photoelectric conversion panel includes a TFT, a photodiode disposed at an upper layer than the TFT, a first organic film formed at an upper layer than the photodiode, a first inorganic insulating film covering at least a part of the first organic film, and a second organic film covering at least a part of the first inorganic insulating film. The first inorganic insulating film includes a first hole portion connecting the first organic film and the second organic film, and a first moisture-proof portion at least a part of which is disposed at a side of the photodiode with respect to the first hole portion. The first moisture-proof portion penetrates the first organic film.

An imaging device includes a first electrode, a charge accumulating electrode arranged with a space from the first electrode, an isolation electrode arranged with a space from the first electrode and the charge accumulating electrode and surrounding the charge accumulating electrode, a photoelectric conversion layer formed in contact with the first electrode and above the charge accumulating electrode with an insulating layer interposed therebetween, and a second electrode formed on the photoelectric conversion layer. The isolation electrode includes a first isolation electrode and a second isolation electrode arranged with a space from the first isolation electrode, and the first isolation electrode is positioned between the first electrode and the second isolation electrode.

An opto-electronic device includes: a first electrode; an organic layer disposed over the first electrode; a nucleation promoting coating disposed over the organic layer; a nucleation inhibiting coating covering a first region of the opto-electronic device; and a conductive coating covering a second region of the opto-electronic device.

An organic photodetector including: a substrate; a first electrode arranged on the substrate; a second electrode arranged on the substrate and apart from the first electrode in a first direction crossing a direction perpendicular to the substrate; and an active layer covering the first electrode and the second electrode.

An organic compound represented by the following general formula [1] is excellent in thermal stability. ##STR00001##
In the general formula [1], R.sub.1 to R.sub.12 are each independently selected from the group consisting of a hydrogen atom and a substituent. Symbol A is selected from the group consisting of a divalent residue of naphthalene, phenanthrene, fluorene, benzofluorene, dibenzofluorene or spirofluorene, and a heteroarylene group having 4 to 12 carbon atoms. Symbol B is selected from the group consisting of an arylene group having 6 to 25 carbon atoms and a heteroarylene group having 4 to 12 carbon atoms. Symbol n is an integer of 0 to 3.

A solid-state imaging element including: a photoelectric conversion layer, a first electrode and a second electrode opposed to each other with the photoelectric conversion layer interposed therebetween, a semiconductor layer provided between the first electrode and the photoelectric conversion layer, an accumulation electrode opposed to the photoelectric conversion layer with the semiconductor layer interposed therebetween, an insulating film provided between the accumulation electrode and the semiconductor layer, and a barrier layer provided between the semiconductor layer and the photoelectric conversion layer.