A photoelectric conversion device includes: a first carrier transport layer; a photoelectric conversion layer containing an ionic crystalline compound; and a polysiloxane layer between the first carrier transport layer and the photoelectric conversion layer, the polysiloxane layer containing a polysiloxane having a polar functional group R.sup.1.

A photoelectric conversion element including: a first electrode; a hole blocking layer; a photoelectric conversion layer; a second electrode; a third electrode; a photoelectric conversion part in which the first electrode, the hole blocking layer, the photoelectric conversion layer, and the second electrode are stacked; an electrode contact part in which the second electrode is in contact with the third electrode; and a division part dividing the photoelectric conversion part and the electrode contact part, wherein an area (S1) where the second electrode is in contact with the third electrode in the electrode contact part and an area (S2) of the photoelectric conversion part satisfy expression (1) below: 1.0×10.sup.−5≤100×(S1/S2) . . . expression (1).

A photodetection device is configured to detect light and the photodetection device includes a substrate having a largest surface; a dielectric formed over the largest surface of the substrate; a first metallic electrode formed on the dielectric; a second metallic electrode formed on the dielectric, at a given distance from the first metallic electrode, to form a channel; and a single-crystal linear-chain polyfluorinated dibromo-platinum(II) diimine complex located in the channel.

An imaging element according to an embodiment of the present disclosure includes: a first electrode; a second electrode; an organic layer; a first semiconductor layer; and a second semiconductor layer. The second electrode is disposed to be opposed to the first electrode. The organic layer is provided between the first electrode and the second electrode. The organic layer includes at least a photoelectric conversion layer. The first semiconductor layer is provided between the second electrode and the organic layer. The first semiconductor layer includes at least one of a carbon-containing compound or an inorganic compound. The carbon-containing compound has a greater electron affinity than a work function of the first electrode. The inorganic compound has a greater work function than the work function of the first electrode. The second semiconductor layer is provided between the second electrode and the first semiconductor layer. The second semiconductor layer has an absolute value B of a difference between a HOMO (Highest Occupied Molecular Orbital) level and a Fermi level of the second electrode or has, near the Fermi level, an in-gap level having a state density of 1/10000 or more as compared with the HOMO level. The absolute value B is greater than or equal to an absolute value A of a difference between a first LUMO (Lowest Unoccupied Molecular Orbital) level and the Fermi level. The first LUMO level is calculated from an optical band gap.

An imaging element according to an embodiment of the present disclosure includes: a first electrode; a second electrode; an organic layer; a first semiconductor layer; and a second semiconductor layer. The second electrode is disposed to be opposed to the first electrode. The organic layer is provided between the first electrode and the second electrode. The organic layer includes at least a photoelectric conversion layer. The first semiconductor layer is provided between the second electrode and the organic layer. The first semiconductor layer includes at least one of a carbon-containing compound or an inorganic compound. The carbon-containing compound has a greater electron affinity than a work function of the first electrode. The inorganic compound has a greater work function than the work function of the first electrode. The second semiconductor layer is provided between the second electrode and the first semiconductor layer. The second semiconductor layer has an absolute value B of a difference between a HOMO (Highest Occupied Molecular Orbital) level and a Fermi level of the second electrode or has, near the Fermi level, an in-gap level having a state density of 1/10000 or more as compared with the HOMO level. The absolute value B is greater than or equal to an absolute value A of a difference between a first LUMO (Lowest Unoccupied Molecular Orbital) level and the Fermi level. The first LUMO level is calculated from an optical band gap.

A detector is for electromagnetic radiation. In an embodiment, the detector includes a first, pixelated electrode layer, a second electrode, and a first layer including at least one first perovskite, located between the first, pixelated electrode layer and the second electrode. An embodiment further relates to a method for manufacturing a corresponding detector.

Provided is an intrinsically stretchable organic solar cell, a manufacturing method thereof, and an electronic device comprising the same. The intrinsically stretchable organic solar cell of the present invention is characterized that wherein excellent interfacial bonding among stretchable constituent elements constituting each layer is induced so that the constituent elements are seamlessly integrated into a single system, thereby ensuring excellent initial power conversion efficiency (PCE), and mechanical robustness showing that 70% or more of initial PCE is maintained in spite of repetitive tensile strains. Thus, the organic solar cell is useful for an electronic device applied to any one selected from a group consisting of sensors, electronic skins, flexible displays, and stretchable displays.

The present disclosure provides a polyoxomolybdate material and a preparation method and use thereof, a solar cell, and an organic light-emitting diode (OLED), and belongs to the technical field of optoelectronic devices. An organic solar cell (OSC) with the polyoxomolybdate material of the present disclosure as an electrode interface material has an open-circuit voltage of 0.810 V to 0.860 V, a short-circuit current density of 24.50 mA/cm.sup.2 to 26.10 mA/cm.sup.2, a fill factor of 68.7% to 78.8%, and a power conversion efficiency (PCE) of 14.21% to 17.42%. An OLED with the polyoxomolybdate material of the present disclosure has a turn-on voltage of 2.3 V to 3.5 V, a maximum brightness of 14,330 cd/m.sup.2 to 43,430 cd/m.sup.2, a current efficiency of 7.00 cd/A to 15.00 cd/A, and a power efficiency of 3.50 lm/W to 13.00 lm/W, and exhibits prominent LED performance.

The present disclosure provides a polyoxomolybdate material and a preparation method and use thereof, a solar cell, and an organic light-emitting diode (OLED), and belongs to the technical field of optoelectronic devices. An organic solar cell (OSC) with the polyoxomolybdate material of the present disclosure as an electrode interface material has an open-circuit voltage of 0.810 V to 0.860 V, a short-circuit current density of 24.50 mA/cm.sup.2 to 26.10 mA/cm.sup.2, a fill factor of 68.7% to 78.8%, and a power conversion efficiency (PCE) of 14.21% to 17.42%. An OLED with the polyoxomolybdate material of the present disclosure has a turn-on voltage of 2.3 V to 3.5 V, a maximum brightness of 14,330 cd/m.sup.2 to 43,430 cd/m.sup.2, a current efficiency of 7.00 cd/A to 15.00 cd/A, and a power efficiency of 3.50 lm/W to 13.00 lm/W, and exhibits prominent LED performance.

Provided in the present disclosure is a photoelectric device. For the photoelectric device, a modification layer is added on the surface of a first electrode layer on the side away from a base substrate. The presence of the modification layer can prevent the direct contact of the first electrode layer and other film layers, thereby alleviating the problem of corrosion of indium-containing oxide which constitutes the first electrode layer. Furthermore, an indium-ion trapping group contained in the modification layer can fix indium ions released after the corrosion of the indium-containing oxide to the surface of the first electrode layer, thereby preventing the indium ions from moving to the inner part of the photoelectric device, which can then increase the service life of the photoelectric device.