An imaging device includes a first electrode, a charge accumulating electrode arranged with a space from the first electrode, an isolation electrode arranged with a space from the first electrode and the charge accumulating electrode and surrounding the charge accumulating electrode, a photoelectric conversion layer formed in contact with the first electrode and above the charge accumulating electrode with an insulating layer interposed therebetween, and a second electrode formed on the photoelectric conversion layer. The isolation electrode includes a first isolation electrode and a second isolation electrode arranged with a space from the first isolation electrode, and the first isolation electrode is positioned between the first electrode and the second isolation electrode.

An infrared absorption composition includes a p-type semiconductor compound including a first structural unit represented by Chemical Formula 1 and a second structural unit including an electron donating moiety; and an n-type semiconductor compound represented by Chemical Formula 2:

##STR00001## wherein, in Chemical Formula 1, Ar.sup.1, X, R.sup.1a, and R.sup.2a are the same as defined in the detailed description. In Chemical Formula 2, A.sup.1, A.sup.2, D.sup.1, D.sup.2, and D.sup.3 are the same as defined in the detailed description.

An infrared absorption composition includes a p-type semiconductor compound including a first structural unit represented by Chemical Formula 1 and a second structural unit including an electron donating moiety; and an n-type semiconductor compound represented by Chemical Formula 2:

##STR00001## wherein, in Chemical Formula 1, Ar.sup.1, X, R.sup.1a, and R.sup.2a are the same as defined in the detailed description. In Chemical Formula 2, A.sup.1, A.sup.2, D.sup.1, D.sup.2, and D.sup.3 are the same as defined in the detailed description.

The present disclosure provides a photoelectric conversion element including a first electrode 3, a second electrode 7, a photoelectric conversion layer 5 between the first electrode 3 and the second electrode 7, and a reflection layer 6 between one of the first electrode 3 and the second electrode 7 and the photoelectric conversion layer 5. The wavelength at which the reflectance of the reflection layer 6 is maximum in the visible region is within the range of wavelengths in which the optical absorption coefficient of the photoelectric conversion layer 5 is ⅕ or more of the maximum optical absorption coefficient in the visible region.

Provided is a solar cell including a first electrode, a second electrode, a light-absorbing layer located between the first electrode and the second electrode, and an intermediate layer located between the light-absorbing layer and at least one electrode selected from the group consisting of the first electrode and the second electrode. The light-absorbing layer contains a perovskite compound represented by a chemical formula ASnX.sub.3 (where A is a monovalent cation and X is a halogen anion). The intermediate layer is in contact with the light-absorbing layer. The at least one electrode selected from the group consisting of the first electrode and the second electrode has light-transmissive property. The intermediate layer contains at least one selected from the group consisting of (4-(1′,5′-dihydro-1′-methyl-2′H-[5,6]fullereno-C60-Ih[1,9-c]pyrrol-2′-yl)benzoic acid) and fullerene C60.

An organic device includes at least one electrode, an insulating layer adjacent to the at least one electrode in a plan view, and an organic layer that is continuously in contact with an upper surface of the at least one electrode and an upper surface of the insulating layer. The organic layer contains a polymer of an organic material. The organic material contains a basic molecular skeleton and a polymerizable functional group. In the polymer, the organic material is polymerized through the polymerizable functional group.

The present disclosure provides an organic compound represented by general formula [1] below.

##STR00001##

In formula [1], Ar.sub.1 and Ar.sub.2 each represent an alkyl group having 1 to 8 carbon atoms, an aromatic hydrocarbon group having 6 to 18 carbon atoms, or a heteroaromatic group having 3 to 17 carbon atoms. Ar.sub.1 and Ar.sub.2 may be the same or different. Ar.sub.3 and Ar.sub.4 are each a substituent having a carbazolyl group. Ar.sub.3 and Ar.sub.4 may be the same or different. Ar.sub.1 to Ar.sub.4 may be substituted. At least one of Ar.sub.1 to Ar.sub.4 has a tert-butyl group. The total number of tert-butyl groups in one molecule of the organic compound is 2 or more.

A multifunctional imaging device is provided. The imaging device includes first to fourth light-receiving elements and first and second functional layers. The first to fourth light-receiving elements are photoelectric conversion elements having sensitivity to light of different wavelengths from each other. The first and second functional layers each include first and second transistors. The first functional layer and the fourth to first light-receiving elements are stacked in this order over the second functional layer. In each of the first to fourth light-receiving elements, a first conductive layer, a first buffer layer, a photoelectric conversion layer, a second buffer layer, and a second conductive layer are stacked in this order. The photoelectric conversion layer includes an organic compound, and the first buffer layer and the second buffer layer each include a metal or an organic compound. The first transistor is electrically connected to the first conductive layer of any of the first to fourth light-receiving elements. The second transistor is electrically connected to the first transistor.

A multifunctional imaging device is provided. The imaging device includes first to fourth light-receiving elements and first and second functional layers. The first to fourth light-receiving elements are photoelectric conversion elements having sensitivity to light of different wavelengths from each other. The first and second functional layers each include first and second transistors. The first functional layer and the fourth to first light-receiving elements are stacked in this order over the second functional layer. In each of the first to fourth light-receiving elements, a first conductive layer, a first buffer layer, a photoelectric conversion layer, a second buffer layer, and a second conductive layer are stacked in this order. The photoelectric conversion layer includes an organic compound, and the first buffer layer and the second buffer layer each include a metal or an organic compound. The first transistor is electrically connected to the first conductive layer of any of the first to fourth light-receiving elements. The second transistor is electrically connected to the first transistor.

Provided is a solar cell module and a manufacturing method thereof, and a photovoltaic module. The solar cell module includes a substrate; and conductive layers arranged on a surface of the substrate and separated from each other. Solar sub-cells are provided on a surface of the conductive layer. Grooves are provided between adjacent solar sub-cells to separate the solar sub-cells from each other. Each of the solar sub-cells includes a hole transport layer, a perovskite layer and an electron transport layer that are stacked on the surface of the conductive layer. The hole transport layer of each solar sub-cell includes branch electrodes separated from each other. Each of the branch electrodes contacts an interior of the conductive layer. The solar cell module further includes an electrode. The electrode successively passes through the electron transport layer and the perovskite layer and is connected to the branch electrodes.