Provided is a perovskite solar cell. The perovskite solar cell includes a bottom electrode; a hole transport layer formed on the bottom electrode; a first polymer electrolyte layer formed on the hole transport layer and including a halide; a perovskite photoactive layer formed on the first polymer electrolyte layer; an electron transport layer formed on the perovskite photoactive layer; a second polymer electrolyte layer formed on the electron transport layer and including an amine group; and a top electrode formed on the second polymer electrolyte layer.

Provided is a perovskite solar cell. The perovskite solar cell includes a bottom electrode; a hole transport layer formed on the bottom electrode; a first polymer electrolyte layer formed on the hole transport layer and including a halide; a perovskite photoactive layer formed on the first polymer electrolyte layer; an electron transport layer formed on the perovskite photoactive layer; a second polymer electrolyte layer formed on the electron transport layer and including an amine group; and a top electrode formed on the second polymer electrolyte layer.

A lead-free solar cell includes, in the following order, a back metal contact layer including gold (Au), a hole transport layer (HTL) including copper oxide (Cu.sub.2O), an inorganic absorber layer including rubidium germanium iodide (RbGeI.sub.3), a perovskite absorber layer including methylammonium tin iodide (MASnI.sub.3), an electron transport layer (ETL) including C.sub.60, and a front contact layer including indium tin oxide (ITO). The solar cell achieves a current density (J.sub.sc) of greater than or equal to 20 milliamperes per square centimeter (mA/cm.sup.2) at an open-circuit voltage (V.sub.OC) of 0.94 volts (V).

A lead-free solar cell includes, in the following order, a back metal contact layer including gold (Au), a hole transport layer (HTL) including copper oxide (Cu.sub.2O), an inorganic absorber layer including rubidium germanium iodide (RbGeI.sub.3), a perovskite absorber layer including methylammonium tin iodide (MASnI.sub.3), an electron transport layer (ETL) including C.sub.60, and a front contact layer including indium tin oxide (ITO). The solar cell achieves a current density (J.sub.sc) of greater than or equal to 20 milliamperes per square centimeter (mA/cm.sup.2) at an open-circuit voltage (V.sub.OC) of 0.94 volts (V).

A lead-free solar cell includes a fullerene layer and contains an electron transport layer (ETL) comprising fullerene (C.sub.60) and a binder, a back metal contact layer including gold (Au), a hole transport layer (HTL) including copper oxide (Cu.sub.2O), an inorganic absorber layer including rubidium germanium iodide (RbGeI.sub.3), a perovskite absorber layer including methylammonium tin iodide (MASnI.sub.3), and a front contact layer including indium tin oxide (ITO). The layers are in the following order: the back metal contact layer, the hole transport layer, the inorganic absorber layer, the perovskite absorber layer, the electron transport layer and the front contact layer. The solar cell achieves a current density (J.sub.sc) of greater than or equal to 20 milliamperes per square centimeter (mA/cm.sup.2) at an open-circuit voltage (V.sub.OC) of 0.94 volts (V).

A lead-free solar cell includes a fullerene layer and contains an electron transport layer (ETL) comprising fullerene (C.sub.60) and a binder, a back metal contact layer including gold (Au), a hole transport layer (HTL) including copper oxide (Cu.sub.2O), an inorganic absorber layer including rubidium germanium iodide (RbGeI.sub.3), a perovskite absorber layer including methylammonium tin iodide (MASnI.sub.3), and a front contact layer including indium tin oxide (ITO). The layers are in the following order: the back metal contact layer, the hole transport layer, the inorganic absorber layer, the perovskite absorber layer, the electron transport layer and the front contact layer. The solar cell achieves a current density (J.sub.sc) of greater than or equal to 20 milliamperes per square centimeter (mA/cm.sup.2) at an open-circuit voltage (V.sub.OC) of 0.94 volts (V).

The present disclosure provides a photoelectric conversion element including a first electrode 3, a second electrode 7, a photoelectric conversion layer 5 between the first electrode 3 and the second electrode 7, and a reflection layer 6 between one of the first electrode 3 and the second electrode 7 and the photoelectric conversion layer 5. The wavelength at which the reflectance of the reflection layer 6 is maximum in the visible region is within the range of wavelengths in which the optical absorption coefficient of the photoelectric conversion layer 5 is or more of the maximum optical absorption coefficient in the visible region.

The present disclosure provides a photoelectric conversion element including a first electrode 3, a second electrode 7, a photoelectric conversion layer 5 between the first electrode 3 and the second electrode 7, and a reflection layer 6 between one of the first electrode 3 and the second electrode 7 and the photoelectric conversion layer 5. The wavelength at which the reflectance of the reflection layer 6 is maximum in the visible region is within the range of wavelengths in which the optical absorption coefficient of the photoelectric conversion layer 5 is or more of the maximum optical absorption coefficient in the visible region.

The present invention relates to a method for manufacturing a perovskite solar cell and a perovskite solar cell manufactured thereby and, more specifically, to a method for manufacturing a perovskite solar cell and a perovskite solar cell manufactured thereby, wherein the method comprises the steps of: (S1) applying a) an oxidative agent, b) ultraviolet light and ozone, c) oxygen plasma, or d) nitrogen dioxide gas to a hole transport layer (HTL) of a laminate in which a substrate layer, a first electrode layer, and the hole transport layer (HTL) containing a metal oxide are sequentially laminated, to oxidize the metal oxide; and (S2) sequentially laminating a perovskite layer, an electron transport layer, and a second electrode layer on the hole transport layer of the laminate.

The present invention relates to a method for manufacturing a perovskite solar cell and a perovskite solar cell manufactured thereby and, more specifically, to a method for manufacturing a perovskite solar cell and a perovskite solar cell manufactured thereby, wherein the method comprises the steps of: (S1) applying a) an oxidative agent, b) ultraviolet light and ozone, c) oxygen plasma, or d) nitrogen dioxide gas to a hole transport layer (HTL) of a laminate in which a substrate layer, a first electrode layer, and the hole transport layer (HTL) containing a metal oxide are sequentially laminated, to oxidize the metal oxide; and (S2) sequentially laminating a perovskite layer, an electron transport layer, and a second electrode layer on the hole transport layer of the laminate.