An organic light-emitting device including an anode electrode, a hole injection layer on the anode electrode, a hole transport layer on the hole injection layer, an emissive layer on the hole transport layer, and a cathode electrode on the emissive layer. A material of the hole injection layer includes a nitrogen-containing compound having a quinoid structure and a nitrogen-containing compound having a benzenoid structure. A ratio of a peak intensity I.sub.B to a peak intensity I.sub.A (I.sub.B/I.sub.A) in a Fourier transform infrared spectroscopy (FTIR) spectrum of the material of the hole injection layer ranges from 1.5 to 2.5, the peak intensity I.sub.A and the peak intensity I.sub.B being further defined.

An electroluminescent device, a manufacturing method thereof, and a display apparatus are provided. The electroluminescent device includes an anode layer, a light emitting layer, a cathode layer, a hole transport layer located between the anode layer and the light emitting layer, and a electron transport layer located between the cathode layer and the light emitting layer. The electroluminescent device further includes: a first interface modification layer between the light emitting layer and one of the hole transport layer and the electron transport layer; wherein an energy level of the first interface modification layer matches an energy level of the light emitting layer and an energy level of the one of the hole transport layer and the electron transport layer.

A display apparatus including a light-emitting layer is provided. The light-emitting layer may be disposed between a first electrode and a second electrode. The light-emitting layer may include a first emission stack and a second emission stack on the first emission stack. The first emission stack may include a blue emission material layer. The second emission stack may include an emission buffer layer, a first phosphorescent emission material layer and a second phosphorescent emission material layer, which are sequentially stacked. The emission buffer layer may include a host having an electron transporting properties and a red dopant. The content of the red dopant in the emission buffer layer may decrease as a distance from the first charge generation layer increases. Thus, in the display apparatus, a color change at low-current may be improved.

Disclosed are a light-emitting device and a display device including the same. An emissive layer is formed so as to have a dual-layer structure, the triplet energy level of a dopant of a first emissive layer adjacent to a hole transport layer is greater than the triplet energy level of a first host in the first emissive layer, and the triplet energy level of the first host is greater than the triplet energy level of a second host of a second emissive layer, whereby triplet excitons generated in the first emissive layer are recycled to the second emissive layer so as to be reused for light emission.

An organic electronic device comprises a substrate, at least one morphological stabilizing layer positioned over the substrate, the morphological stabilizing layer comprising a material having a T.sub.g greater than 50° C., and at least one organic layer positioned in direct contact with the morphological stabilizing layer. A method of making an organic electronic device is also disclosed.

A light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an interlayer between the first electrode and the second electrode and including an emission layer, wherein the interlayer includes a hole injection layer and a hole transport layer between the first electrode and the emission layer, the hole injection layer directly contacts the first electrode, the hole injection layer has a multi-layered structure of at least two different layers that are stacked on each other, the hole injection layer includes at least one inorganic material of a post-transition metal, a metalloid, a compound including at least two post-transition metal elements, a compound including at least two metalloid elements, or a compound including a post-transition metal element and a metalloid element, the post-transition metal and the metalloid are described herein.

A display panel includes an upper display substrate in which first to third pixel regions respectively configured to emit first to third light are defined, and a lower display substrate including first to third light-emitting elements respectively overlapping the first to third pixel regions. The first light-emitting element and the second light-emitting element each include one or more first stack parts and one or more first charge generation layers, each of the one or more first stack parts including a first emission layer configured to emit the second light. The third light-emitting element includes one or more second stack parts and one or more second charge generation layers, each of the one or more second stacking parts including a second emission layer configured to emit the third light. The first charge generation layer includes organic dopants, and the second charge generation layer includes inorganic dopants.

An optoelectronic device comprises a first electrode; a first host material layer positioned over the first electrode; a second host material layer positioned over the first host material layer; at least one ultrathin dopant layer positioned between the first and second host material layers, the at least one ultrathin dopant layer having a thickness of less than 2 Å; and a second electrode positioned over the second host material layers. Other organic optoelectronic devices are also disclosed.

An organic EL element includes a pixel electrode, a light emitting function layer that is formed on the pixel electrode, an electron injection layer formed on the light emitting function layer, and a counter electrode that is formed on the electron injection layer and that has semi-transmissive reflectivity, in which the counter electrode contains a reductive material that reduces material of the electron injection layer and Ag with atomic ratio of 75% or more, and an adsorption layer is formed on the counter electrode.

An electroluminescent device, a manufacturing method thereof, and a display apparatus are provided. The electroluminescent device includes an anode layer, a light emitting layer, a cathode layer, a hole transport layer located between the anode layer and the light emitting layer, and a electron transport layer located between the cathode layer and the light emitting layer. The electroluminescent device further includes: a first interface modification layer between the light emitting layer and one of the hole transport layer and the electron transport layer; wherein an energy level of the first interface modification layer matches an energy level of the light emitting layer and an energy level of the one of the hole transport layer and the electron transport layer.