Disubstituted diaryloxybenzoheterodiazole compound of general formula (I): ##STR00001##
in which: Z represents a sulfur atom, an oxygen atom, a selenium atom; or an NR.sub.5 group in which R.sub.5 is selected from linear or branched C.sub.1-C.sub.20, or from optionally substituted aryl groups; R.sub.1, R.sub.2, R.sub.3 and R.sub.4 are as defined in the claims. The disubstituted diaryloxybenzoheterodiazole compound of general formula (I) can advantageously be used as a spectrum converter in luminescent solar concentrators (LSCs) which are in turn capable of improving the performance of photovoltaic devices (or solar devices) selected, for example, from photovoltaic cells (or solar cells), photovoltaic modules (or solar modules) on either a rigid substrate or a flexible substrate.

Disubstituted diaryloxybenzoheterodiazole compound of general formula (I): ##STR00001##
in which: Z represents a sulfur atom, an oxygen atom, a selenium atom; or an NR.sub.5 group in which R.sub.5 is selected from linear or branched C.sub.1-C.sub.20, or from optionally substituted aryl groups; R.sub.1, R.sub.2, R.sub.3 and R.sub.4 are as defined in the claims. The disubstituted diaryloxybenzoheterodiazole compound of general formula (I) can advantageously be used as a spectrum converter in luminescent solar concentrators (LSCs) which are in turn capable of improving the performance of photovoltaic devices (or solar devices) selected, for example, from photovoltaic cells (or solar cells), photovoltaic modules (or solar modules) on either a rigid substrate or a flexible substrate.

An infrared photodiode includes a first electrode including a reflective layer, a second electrode facing the first electrode, and a photoelectric conversion layer between the first electrode and the second electrode. The photoelectric conversion layer includes an infrared absorbing material. A maximum absorption wavelength of the infrared absorbing material in a solution state is greater than about 700 nm and less than or equal to about 950 nm. The infrared photodiode is configured to exhibit an external quantum efficiency (EQE) spectrum in a wavelength region of greater than or equal to about 1000 nm.

An imaging device includes a photoelectric converter and a microlens. The microlens is provided above the photoelectric conversion layer. In a cross-section of the imaging device, an upper surface of the microlens forms a contour line in which a first curve projecting upward is connected to a second curve projecting downward at a first inflection point located between the first curve and the second curve. In this cross-section, a curvature radius of the second curve at a lower end of the second curve is larger than a distance in a thickness direction of the microlens from an upper end of the first curve to the first inflection point.

There is a diaryloxybenzoheterodiazole compound di-substituted with thienothiophenic groups having general formula (Ia):

##STR00001##

The diaryloxybenzoheterodiazole compound di-substituted with thienothiophenic groups having general formula (Ia) can be advantageously used as a spectrum converter in luminescent solar concentrators (LSCS) capable, in turn, of improving the performance of photovoltaic devices (or solar devices), selected for example, between photovoltaic cells (or solar cells), photovoltaic modules (or solar modules), either on a rigid support, or on a flexible support. More particularly, said photovoltaic devices (or solar devices) can be advantageously used in the construction of greenhouses.

An ultra-thin shadow mask comprises a plastic foil including a plurality of apertures, wherein the ultra-thin shadow mask is less than 25 μm thick, and wherein the ultra-thin shadow mask has a feature size of at least 1 μm to about 100 μm. An organic photovoltaic (OPV) device comprises a first electrode including a first grid structure, the first grid structure having a feature size of at least 1 μm to about 100 μm, a heterojunction under the first electrode, a second electrode under the heterojunction including a second grid structure, and a plurality of outcoupling layers over the first electrode. Related methods are also disclosed.

There is provided a semiconductor film that includes an aggregate of semiconductor quantum dots that contain a Pb atom, and a ligand that is coordinated to the semiconductor quantum dot, in which a ratio of the number of Pb atoms having a valence of 1 or less to the number of Pb atoms having a valence of 2 is 0.20 or less. There are also provided a photodetector element, an image sensor, and a manufacturing method for a semiconductor film.

Disclosed are a photodetector using a photoelectric conversion effect wherein current changes according to light; and a method of manufacturing the photodetector. More particularly, a photodetector manufactured using a transition metal dichalcogen compound having high sensitivity to wavelengths of light in the visible light region by forming a sensor layer utilizing a transition metal dichalcogen compound such that the thickness of the sensor layer can be adjusted is provided.

There is provided a multi-junction photovoltaic device comprising a first sub-cell disposed over a second sub-cell, the first sub-cell comprising a photoactive region comprising a layer of perovskite material and the second sub-cell comprising a silicon heterojunction (SHJ).

An optical element includes a photoelectric conversion film and an inorganic substance-containing film containing at least one selected from the group consisting of a metal nitride and a metal oxynitride, in which the photoelectric conversion film contains a quantum dot or at least one compound semiconductor selected from the group consisting of a III-V group compound semiconductor, a II-VI group compound semiconductor, and a IV-IV group compound semiconductor, and the optical density of an inorganic substance-containing film is 0.5 or more per 1.0 μm of a film thickness at a wavelength of 1,550 nm.