A device includes a first substrate, a silicon layer supported by the first substrate, and an active glass layer with a layer including a crystal material with a chemical formula ABX.sub.3 supported by a glass substrate. The active glass layer is stacked on the first substrate such that the layer including the crystal material with a chemical formula ABX.sub.3 and silicon layer are arranged between the first substrate and the glass substrate.

A device includes a first substrate, a silicon layer supported by the first substrate, and an active glass layer with a layer including a crystal material with a chemical formula ABX.sub.3 supported by a glass substrate. The active glass layer is stacked on the first substrate such that the layer including the crystal material with a chemical formula ABX.sub.3 and silicon layer are arranged between the first substrate and the glass substrate.

The present disclosure relates to a photovoltaic (PV) device that includes a color-conversion layer that includes at least one of a color-tuning layer and/or an intermediate layer and a photovoltaic layer where the color-conversion layer changes the appearance of the PV device when compared to a similar PV device constructed without the color-conversion layer, the color-conversion layer increases a power output of the PV device by at least one of reflecting light to the PV layer or emitting light which is redirected to the PV layer, and the device is at least partially transparent to light in the visible spectrum.

The present disclosure may provide semiconductor perovskite layers and method of making thereof. In some cases, the perovskite layer may comprise a composition of MA.sub.n1FA.sub.n2Cs.sub.n3PbX.sub.3. MA may be methylammonium, FA may be formamidinium, n1, n2, and n3 may independently be greater than 0 and less than 1, and n1 + n2 + n3 may equal 1.

The present inventive concept relates to a method of manufacturing a thin film of a perovskite compound, including a process of reacting at least one compound selected from among an amine-based compound and an amidine-based compound, an organic metal compound including a divalent positive ion, and at least one hydrogen halide, and a method of manufacturing a solar cell using the same, and

According to the present inventive concept, because a perovskite compound is manufactured by performing a reaction through a chemical vapor deposition (CVD) process and an atomic layer deposition (ALD) process, step coverage may be enhanced, and thus, it may be possible to form a thin film having a uniform thickness and a problem where a solvent remains may also be solved.

An infrared absorber includes a compound represented by Chemical Formula ##STR00001## In Chemical Formula 1, Ar.sup.1, Ar.sup.2, X.sup.1, L.sup.1, L.sup.2, R.sup.1, R.sup.2, R.sup.3, and R.sup.4 are the same as defined in the detailed description.

A semi-translucent photovoltaic device is described having a translucent substrate with a photovoltaic stack interrupted in spatially distributed openings filled with a translucent polymer. Also disclosed is a method of manufacturing the device. The method comprises providing the substrate at a first side with the photovoltaic stack; removing material from the stack in spatially distributed regions, therewith forming openings within these regions; blanket-wise depositing a protective layer over the substrate with the photovoltaic stack; blanket-wise depositing a layer of a radiation-curable precursor for the translucent polymer over the protective layer; irradiating the substrate from a second side opposite its first side to therewith selectively cure the radiation-curable precursor within and in front of the spatially distributed openings, the radiation-curable precursor being converted therewith into said translucent polymer; removing an uncured remainder of the layer of the radiation-curable precursor.

A semi-translucent photovoltaic device is described having a translucent substrate with a photovoltaic stack interrupted in spatially distributed openings filled with a translucent polymer. Also disclosed is a method of manufacturing the device. The method comprises providing the substrate at a first side with the photovoltaic stack; removing material from the stack in spatially distributed regions, therewith forming openings within these regions; blanket-wise depositing a protective layer over the substrate with the photovoltaic stack; blanket-wise depositing a layer of a radiation-curable precursor for the translucent polymer over the protective layer; irradiating the substrate from a second side opposite its first side to therewith selectively cure the radiation-curable precursor within and in front of the spatially distributed openings, the radiation-curable precursor being converted therewith into said translucent polymer; removing an uncured remainder of the layer of the radiation-curable precursor.

There is provided a semiconductor film including an aggregate of semiconductor quantum dots that contain a metal atom and a ligand that is coordinated to the semiconductor quantum dot, in which a half width at half maximum of an exciton absorption peak in optical characteristics of the semiconductor film is 60 nm or less. There are also provided a manufacturing method for a semiconductor film, a photodetector element, and an image sensor.

There is provided a semiconductor film including an aggregate of semiconductor quantum dots that contain a metal atom and a ligand that is coordinated to the semiconductor quantum dot, in which a half width at half maximum of an exciton absorption peak in optical characteristics of the semiconductor film is 60 nm or less. There are also provided a manufacturing method for a semiconductor film, a photodetector element, and an image sensor.