A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed:

##STR00001##

In Chemical Formula 1, each substituent is the same as defined in the detailed description.

An imaging element which is formed by sequentially stacking at least an anode, an anode-side buffer layer, a photoelectric conversion layer, and a cathode, in which the anode-side buffer layer includes a material having structural formula ##STR00001##
in which thiophene and carbazole are combined.

A color filter is disposed on a substrate. An organic photodiode is disposed on the color filter. The organic photodiode includes an electrode insulating layer having a recess region on the substrate, a first electrode on the color filter, the first electrode filling the recess region of the electrode insulating layer, a second electrode on the first electrode, and an organic photoelectric conversion layer interposed between the first electrode and the second electrode. The first electrode includes a seam extending at a first angle from a side surface of the recess region of the electrode insulating layer.

An organic x-ray detector and a method of making the organic x-ray detector are disclosed. The x-ray detector includes a TFT array disposed on a substrate, an organic photodiode layer disposed on the TFT array, a barrier layer disposed on the photodiode layer, and a scintillator layer disposed on the barrier layer, such that the barrier layer includes at least one inorganic material.

The present invention concerns a device for room temperature reverse-bias operation photo-detection. The device comprising:—a planar first electrode extending in a planar direction;—a second electrode positioned above the first electrode in a direction substantially perpendicular to said planar direction; and—an active region sandwiched between the first and second electrode. The active region consists of a light absorbing perovskite and wherein the light absorbing perovskite is in direct contact with at least one of the first and second electrodes.

This invention relates to a novel structure of photovoltaic devices (e.g. photovoltaic cells also called as solar cells) are provided. The cells are based on the micro or nano scaled structures which could not only increase the surface area but also have the capability of reducing the reflection and increasing the absorption of incident light. More specifically, the structures are based on 3D structure which are made of electric materials covering semiconductors, insulators, dielectric, polymer, and metallic type materials. By using such structures reflection loss of the light from the cell is significantly reduced, increasing the absorption, which results in increasing the conversion efficiency of the solar cell, and reducing the usage of material while increasing the flexibility of the solar cell. The structures can be also used in other optical devices wherein the reflection loss and absorption are required to enhance significantly improve the device performances.

A field effect transistor photodetector that can operate in room temperature includes a source electrode, a drain electrode, a channel to allow an electric current to flow between the drain and source electrodes, and a gate electrode to receive a bias voltage for controlling the current in the channel. The photodetector includes a light-absorbing material that absorbs light and traps electric charges. The light-absorbing material is configured to generate one or more charges upon absorbing light having a wavelength within a specified range and to hold the one or more charges. The one or more charges held in the light-absorbing material reduces the current flowing through the channel.

Methods of patterning a layer of a photonic device are provided using stamps or masks derived from pre-written optical media discs. One method comprises pressing a stamp on a surface of a layer of a photonic device, the stamp comprising a stamping surface which defines a negative replica of a quasi-random pattern of nanostructures defined in a recording layer of a pre-written optical media disc, for a period of time sufficient to imprint the quasi-random pattern of nanostructures defined in the recording layer of the pre-written optical media disc onto the surface of the layer of the photonic device; and removing the stamp. The stamps, the masks, and the photonic devices comprising the patterned layers are also provided.

Embodiments of this invention comprise a lighting device, such as an organic light emitting diode (“OLED”), constructed so as to form a microcavity that is resonant with an emission wavelength of the emitter and with the emitting region located at an antinode of the resonant mode of the cavity. With the emitting region at this location, this resonant mode operates in stimulated emission and causes the excited state population to be locked at a small level. Interference effects may contribute to this by suppressing spontaneous emission into this mode when the emitter is at this location. Because losses are proportional to the excited state population, the losses are constant or near constant while current is increased. Further, because some device degradation processes are also driven by excited state populations, this can extend the device lifetime as well. In addition, instead of charge density building rapidly with current or output, in this invention, charge density is proportional to the square root of current. This removes some important limitations on maximum brightness. In one embodiment, electricity is generated from light, which results in very high efficiency, especially when utilizing spherical microcavities with a distribution of sizes dispersed in another material making up the photovoltaic cell.

A photosensor includes a first light-shielding layer provided on an insulating surface; a first insulating layer covering the first light-shielding layer; a semiconductor layer provided on the first insulating layer, the semiconductor layer being connected to a first electrode and a second electrode, and the semiconductor layer configuring a diode; a second insulating layer covering the semiconductor layer; an opening provided in the second insulating layer so as to surround the semiconductor layer as viewed from a planar direction and the opening reaching at least the first insulating layer; and a second light-shielding layer covering at least a side wall of the opening.