A method for producing an optoelectronic component may include forming an optoelectronic layer structure having a first adhesion layer, which comprises a first metallic material, above a carrier, providing a covering body with a second adhesion layer, which comprises a second metallic material, applying a first alloy to one of the two adhesion layers, the melting point of the first alloy being so low that the first alloy is liquid, coupling the covering body to the optoelectronic layer structure in such a way that both adhesion layers are in direct contact with the liquid first alloy, and reacting at least part of the liquid first alloy chemically with the metallic materials, as a result of which at least one second alloy is formed, which has a higher melting point than the first alloy, wherein the second alloy solidifies and fixedly connects the covering body to the optoelectronic layer structure.

The present invention provides a barrier laminate, comprising an organic layer and an inorganic barrier layer adjacent to the organic layer, characterized in that the organic layer comprises a polymer obtained by polymerizing a polymerizable compound having two or more polymerizable groups per molecule, and has a refractive index of 1.60 or higher, and in that the refractive index of the inorganic barrier layer is 1.60 or higher. The gas barrier film exhibits high barrier properties and transparence.

An organic photoelectronic device may include a photoelectronic conversion layer between a first electrode and a second electrode and a buffer layer on the photoelectronic conversion layer. The photoelectronic conversion layer may be between a first electrode and a second electrode, and the buffer layer may be between the first electrode and the photoelectronic conversion layer. The photoelectronic conversion layer may include at least a first light absorbing material and a second light absorbing material configured to provide a p-n junction. The buffer layer may include the first light absorbing material and a non-absorbing material associated with a visible wavelength spectrum of light. The non-absorbing material may have a HOMO energy level of about 5.4 eV to about 5.8 eV. The non-absorbing material may have an energy bandgap of greater than or equal to about 2.8 eV.

A photovoltaic module is specified, comprising: a cylindrical light-transmissive tube enclosing an interior and having a main extension direction and a curved inner surface facing the interior, and a mechanically flexible photovoltaic component comprising a solar cell arrangement applied on a carrier film, wherein the photovoltaic component is arranged in the interior, the solar cell arrangement has a curvature, wherein the curvature follows the curved course of the inner surface of the tube at least in places and the solar cell arrangement at least partly covers the inner surface, wherein the covered inner surface forms a light passage surface of the photovoltaic module.

A flexible substrate material having opposed front and back sides and extending in an X-Y plane, the front side being provided with a first electrode layer and further provided with at least one thin film to form at least one thin film device stack; the thin film device stack extending from the X-Y plane in a Z direction perpendicular to the X-Y plane to a distance T; the substrate material having at least one protective structure applied to at least one of the substrate material sides, the first electrode layer and the at least one thin film; the at least one protective structure extending in the Z direction to a distance S from the X-Y plane, the distance S being greater than the distance T.

A photoelectric conversion element includes: a first substrate; a first electrode; a photoelectric conversion layer; a second electrode; a sealing part; and a second substrate. The photoelectric conversion element is translucent. The second electrode includes a conductive nanowire and a conductive polymer. The sealing part includes a drying agent.

A photoelectric conversion element includes: a first substrate; a first electrode; a photoelectric conversion layer; a second electrode; a sealing part; and a second substrate. The photoelectric conversion element is translucent. The second electrode includes a conductive nanowire and a conductive polymer. The sealing part includes a drying agent.

A method for packaging an organic photodetector includes providing a multilayer structure disposed on a portion of a substrate to form the organic photodetector; providing a casing having at least one wall and an open end, wherein the casing includes at least one aperture in at least one wall; sealing the open end of the casing with the substrate to enclose the multilayer structure in a volume such that the least one aperture is located in a path of radiation to an inactive region of the organic photodetector; evacuating the volume through the at least one aperture; and closing the at least one aperture after evacuating the volume to form a detector package. The multilayer structure includes a thin film transistor (TFT) array, an organic photodiode disposed on the TFT array, and a scintillator layer disposed on the organic photodiode. An imaging system including the detector package is also presented.

An optoelectronic assembly including an optically active region configured for emitting and/or absorbing light, and an optically inactive region configured for component-external contacting of the optically active region is provided. The optically inactive region includes a dielectric structure and a first electrode on or above a substrate, an organic functional layer structure on the first electrode in physical contact with the first electrode and the dielectric structure, and a second electrode in physical contact with the organic functional layer structure and above the dielectric structure, wherein the organic functional layer structure at least partly overlaps the dielectric structure in such a way that the part of the second electrode above the dielectric structure is free of a physical contact of the second electrode with the dielectric structure.

After an electroconductive projection is formed on an electrode of an electronic element, a gas barrier film on which an adhesive layer and a contact hole are formed is laminated and pressure-bonded onto a substrate on which the electronic element is formed. Alternatively, after a gas barrier film on which an adhesive layer and a contact hole are formed is laminated on a substrate on which an electronic element is formed and an electroconductive projection is formed on the electrode inside the contact hole, the substrate and the gas barrier film are pressure-bonded to each other, and the contact hole is filled with an electroconductive material. In this manner, there are provided a method of manufacturing an electronic device; and an electronic device to which a take-out wire used to reliably connect the electronic device to an external device using a small contact hole can be connected even in a case where the electronic device is small.