A tandem solar cell is provided. The tandem solar cell includes: a light absorbing layer group, including an excitation layer, a first electron transport layer group provided on a first side of the excitation layer and a first hole transport layer group provided on a second side of the excitation layer; a heterojunction layer group, where the heterojunction layer group includes a first side being a second electron transport layer in contact with the first hole transport layer group, and a second side being a second hole transport layer; a reflection layer is provided on a side of the second hole transport layer; and the reflection layer reflects sunlight irradiated thereon through the light absorbing layer group and the heterojunction layer group into the tandem solar cell.

There is provided a multi-junction photovoltaic device comprising a first sub-cell disposed over a second sub-cell, the first sub-cell comprising a photoactive region comprising a layer of perovskite material and the second sub-cell comprising a silicon heterojunction (SHJ).

There is provided a multi-junction photovoltaic device (100) comprising a first sub-cell (110) disposed over a second sub-cell (120), the first sub-cell comprising a photoactive region comprising a layer of perovskite material and the second sub-cell comprising a silicon heterojunction (SHJ).

An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.

In multijunction photovoltaic cells, such as for example tandem solar cells having a top sub-cell and a crystalline silicon based bottom sub-cell, efficiency of conversion of solar energy into electrical energy is limited mainly by the junction between a top sub-cell and a bottom sub-cell of the multijunction photovoltaic cell. A multijunction photovoltaic cell of this disclosure at least partially overcomes this drawback because it has an intermediate layer of silicon nitride deposited in a conformal manner with a thickness of between 1 and 10 nm so as to define a P-N tunnel junction between the top sub-cell and the bottom sub-cell. A related fabrication process is also disclosed.

In multijunction photovoltaic cells, such as for example tandem solar cells having a top sub-cell and a crystalline silicon based bottom sub-cell, efficiency of conversion of solar energy into electrical energy is limited mainly by the junction between a top sub-cell and a bottom sub-cell of the multijunction photovoltaic cell. A multijunction photovoltaic cell of this disclosure at least partially overcomes this drawback because it has an intermediate layer of silicon nitride deposited in a conformal manner with a thickness of between 1 and 10 nm so as to define a P-N tunnel junction between the top sub-cell and the bottom sub-cell. A related fabrication process is also disclosed.

An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.

A method includes obtaining a set of tandem solar cell devices, and forming, on each tandem solar cell device of the set of tandem solar cell devices using a deposition process, a discrete encapsulation layer along an upper surface and side surfaces of the tandem solar cell device.

A method includes obtaining a set of tandem solar cell devices, and forming, on each tandem solar cell device of the set of tandem solar cell devices using a deposition process, a discrete encapsulation layer along an upper surface and side surfaces of the tandem solar cell device.

A tandem photovoltaic device includes a perovskite absorbing layer, a crystalline silicon absorbing layer and a single-layer electrical function layer connected in series to the two absorbing layers; a contact interface between the perovskite absorbing layer and the single-layer electrical function layer is a first series interface; and a contact interface between the crystalline silicon absorbing layer and the single-layer electrical function layer is a second series interface; wherein a conducting type at the second series interface is different from a conducting type at the first series interface, and the difference between the work functions is 0.3 eV and 0.3 eV.