A multilayer junction photoelectric converter and a multilayer junction photoelectric converter manufacturing method capable of preventing water from contacting a perovskite layer are provided. A multilayer junction photoelectric converter of an embodiment includes a multilayered-structure. In the multilayered-structure, a first electrode functional layer, a first photoactive layer, an intermediate functional layer, a second photoactive layer, and a second electrode functional layer are multilayered. The first photoactive layer is made of crystalline silicon. The second photoactive layer is made of a photoactive material having a perovskite crystal structure. A partial layer included in the second electrode functional layer is included in the multilayered-structure and extends on an edge surface of the multilayered-structure to cover an end portion of the second photoactive layer at the edge surface.

A stacked cell and preparation method thereof. The stacked cell includes: a crystalline silicon cell; a conductive connecting layer located on a surface of the crystalline silicon cell; a first isolation layer extending from a surface of the conductive connecting layer facing away from the crystalline silicon cell to penetrate through the conductive connecting layer, and a perovskite cell located on the surface of the conductive connecting layer facing away from the crystalline silicon cell.

A stacked cell and preparation method thereof. The stacked cell includes: a crystalline silicon cell; a conductive connecting layer located on a surface of the crystalline silicon cell; a first isolation layer extending from a surface of the conductive connecting layer facing away from the crystalline silicon cell to penetrate through the conductive connecting layer, and a perovskite cell located on the surface of the conductive connecting layer facing away from the crystalline silicon cell.

Solar cell modules and methods of fabrication are described. In an embodiment, a pair of tandem solar cells are a step surface or trench within the top subcell of a tandem solar cell is at least partially filled with another material such as an insulator support or electrically conductive support to transfer stress away from the absorber layer of the top subcell of the tandem solar cells when stacked or connected with ribbon.

Solar cell modules and methods of fabrication are described. In an embodiment, a pair of tandem solar cells are a step surface or trench within the top subcell of a tandem solar cell is at least partially filled with another material such as an insulator support or electrically conductive support to transfer stress away from the absorber layer of the top subcell of the tandem solar cells when stacked or connected with ribbon.

A tandem photovoltaic device includes: an upper cell unit, a lower cell unit and a tunnel junction positioned between the upper cell unit and the lower cell unit; the tunnel junction includes an upper transport layer, a lower transport layer, and an intermediate layer positioned between the upper transport layer and the lower transport layer, the intermediate layer is an ordered defect layer, or, the intermediate layer is a continuous thin layer, or, the intermediate layer includes a first layer in contact with the lower transport layer and a second layer in contact with the upper transport layer; a doping concentration of the first layer is 10-10,000 times of a doping concentration of the lower transport layer, and the doping concentration of the first layer is less than 10.sup.21 cm.sup.3; a doping concentration of the second layer is 10-10,000 times of a doping concentration of the upper transport layer.

A multijunction photovoltaic device is disclosed, including a first subcell that may include a base semiconductor layer and a second semiconductor layer, where the base semiconductor layer may include a group III-V semiconductor material, a second subcell on the first subcell which includes an absorber layer comprising an organometallic halide ionic solid perovskite semiconductor material. The device also includes a passivation layer on at least a portion of a top surface of the first subcell. The multijunction photovoltaic device also includes an n-side metal pad in contact with the passivation layer on an n-side of the second subcell. Implementations may include an interconnection tab in contact with the n-side metal pad or in contact with the second subcell. The passivation layer may include an oxide layer. The passivation layer may include a material selected from a group may include of SiO.sub.2, Al.sub.2O.sub.3, TiO.sub.2, Ta.sub.2O.sub.5, HfO.sub.2, ZnS, and combinations thereof.

A multijunction photovoltaic device is disclosed, including a first subcell that may include a base semiconductor layer and a second semiconductor layer, where the base semiconductor layer may include a group III-V semiconductor material, a second subcell on the first subcell which includes an absorber layer comprising an organometallic halide ionic solid perovskite semiconductor material. The device also includes a passivation layer on at least a portion of a top surface of the first subcell. The multijunction photovoltaic device also includes an n-side metal pad in contact with the passivation layer on an n-side of the second subcell. Implementations may include an interconnection tab in contact with the n-side metal pad or in contact with the second subcell. The passivation layer may include an oxide layer. The passivation layer may include a material selected from a group may include of SiO.sub.2, Al.sub.2O.sub.3, TiO.sub.2, Ta.sub.2O.sub.5, HfO.sub.2, ZnS, and combinations thereof.

A semiconductor device and a solar cell each having a bonding structure improving reliability of the semiconductor device or the solar cell and a method of manufacturing the same are provided. A semiconductor device or a solar cell includes: a first semiconductor element SB1 including a silicon layer and having a first bonding surface; a second semiconductor element SB2 having a second bonding surface facing the first bonding surface; and a plurality of electrically-conductive nanoparticles 23 positioned between the first bonding surface and the second bonding surface and electrically connecting the first semiconductor element SB1 and the second semiconductor element SB2 to each other, and the plurality of electrically-conductive nanoparticles 23 intrude into the silicon layer. In addition, a method of manufacturing a semiconductor device or a solar cell includes: a step of preparing a first semiconductor element SB1 and a second semiconductor element SB2; a step of arranging a plurality of electrically-conductive nanoparticles 23 on a first bonding surface of the first semiconductor element SB1; a step of intruding the plurality of electrically-conductive nanoparticles 23 into the silicon layer; and then, a step of facing and pressing the second bonding surface to and against the first bonding surface through the plurality of electrically-conductive nanoparticles 23 therebetween.

A semiconductor device and a solar cell each having a bonding structure improving reliability of the semiconductor device or the solar cell and a method of manufacturing the same are provided. A semiconductor device or a solar cell includes: a first semiconductor element SB1 including a silicon layer and having a first bonding surface; a second semiconductor element SB2 having a second bonding surface facing the first bonding surface; and a plurality of electrically-conductive nanoparticles 23 positioned between the first bonding surface and the second bonding surface and electrically connecting the first semiconductor element SB1 and the second semiconductor element SB2 to each other, and the plurality of electrically-conductive nanoparticles 23 intrude into the silicon layer. In addition, a method of manufacturing a semiconductor device or a solar cell includes: a step of preparing a first semiconductor element SB1 and a second semiconductor element SB2; a step of arranging a plurality of electrically-conductive nanoparticles 23 on a first bonding surface of the first semiconductor element SB1; a step of intruding the plurality of electrically-conductive nanoparticles 23 into the silicon layer; and then, a step of facing and pressing the second bonding surface to and against the first bonding surface through the plurality of electrically-conductive nanoparticles 23 therebetween.