[Object] Provided is an electronic apparatus capable of Preventing image Quality deterioration of an image captured by a camera while reducing a bezel width.

[Solving Means] An electronic apparatus according to the present disclosure includes a display unit disposed on a first surface, a first imaging unit disposed on the side opposite to a display surface of the display unit, and a second imaging unit disposed on a second surface on the side opposite to the first surface. Sensitivity of the first imaging unit to a first wavelength band that includes blue light is higher than sensitivity of the second imaging unit to the first wavelength band. In addition, a ratio of blue light detection pixels in a pixel array of the first imaging unit may be higher than a ratio of blue light detection pixels in a pixel array of the second imaging unit.

Provided is a multilayer imaging device capable of both securing a wide sensitive region and securing an accumulated amount of charges. An imaging device according to an embodiment comprises a pixel, the pixel including a photoelectric conversion layer (15); a first electrode (11) positioned close to a first surface of the photoelectric conversion layer and electrically connected to the photoelectric conversion layer; a second electrode (16) positioned on a second surface opposite to the first surface of the photoelectric conversion layer; a charge accumulation electrode (12) disposed close to the first surface of the photoelectric conversion layer and spaced apart from the first electrode in a direction parallel to the first surface; and a third electrode (200) disposed at a position to have a portion overlapping a gap between the first electrode and the charge accumulation electrode in a direction perpendicular to the first surface.

An imaging device includes: a semiconductor substrate; a plurality of pixel electrodes located above the semiconductor substrate and each electrically connected to the semiconductor substrate; a counter electrode located above the plurality of pixel electrodes; a first photoelectric conversion layer located between the counter electrode and the plurality of pixel electrodes; and at least one first light-shielding body located in the first photoelectric conversion layer or above the first photoelectric conversion layer. The first photoelectric conversion layer contains semiconductor quantum dots that absorb light in a first wavelength range and a coating material that covers the semiconductor quantum dots, the coating material absorbing light in a second wavelength range, the coating material emitting fluorescence in a third wavelength range. The at least one first light-shielding body absorbs or reflects light with a wavelength in at least part of the second wavelength range.

An imaging device includes a photoelectric conversion film and an electrode. The photoelectric conversion film converts light to charge. The electrode collects the charge. The electrode includes two or more layers. The two or more layers include a first layer containing tantalum nitride. An uppermost layer among the two or more layers contains a metal nitride.

An imaging device includes a photoelectric conversion film and an electrode. The photoelectric conversion film converts light to charge. The electrode collects the charge. The electrode includes two or more layers. The two or more layers include a first layer containing tantalum nitride. An uppermost layer among the two or more layers contains a metal nitride.

The present technology relates to an image sensor and an electronic apparatus which enable higher-quality images to be obtained. Provided is an image sensor including a plurality of pixels, each pixel including one on-chip lens, and a plurality of photoelectric conversion layers formed below the on-chip lens. Each of at least two of the plurality of photoelectric conversion layers is split, partially formed, or partially shielded from light with respect to a light-receiving surface. The pixels are phase difference detection pixels for performing AF by phase difference detection or imaging pixels for generating an image. The present technology can be applied to a CMOS image sensor, for example.

A photoelectric conversion panel includes a TFT, a photodiode disposed at an upper layer than the TFT, a first organic film formed at an upper layer than the photodiode, a first inorganic insulating film covering at least a part of the first organic film, and a second organic film covering at least a part of the first inorganic insulating film. The first inorganic insulating film includes a first hole portion connecting the first organic film and the second organic film, and a first moisture-proof portion at least a part of which is disposed at a side of the photodiode with respect to the first hole portion. The first moisture-proof portion penetrates the first organic film.

A photoelectric conversion panel includes a TFT, a photodiode disposed at an upper layer than the TFT, a first organic film formed at an upper layer than the photodiode, a first inorganic insulating film covering at least a part of the first organic film, and a second organic film covering at least a part of the first inorganic insulating film. The first inorganic insulating film includes a first hole portion connecting the first organic film and the second organic film, and a first moisture-proof portion at least a part of which is disposed at a side of the photodiode with respect to the first hole portion. The first moisture-proof portion penetrates the first organic film.

An imaging device includes a first electrode, a charge accumulating electrode arranged with a space from the first electrode, an isolation electrode arranged with a space from the first electrode and the charge accumulating electrode and surrounding the charge accumulating electrode, a photoelectric conversion layer formed in contact with the first electrode and above the charge accumulating electrode with an insulating layer interposed therebetween, and a second electrode formed on the photoelectric conversion layer. The isolation electrode includes a first isolation electrode and a second isolation electrode arranged with a space from the first isolation electrode, and the first isolation electrode is positioned between the first electrode and the second isolation electrode.

An imaging device includes a first electrode, a charge accumulating electrode arranged with a space from the first electrode, an isolation electrode arranged with a space from the first electrode and the charge accumulating electrode and surrounding the charge accumulating electrode, a photoelectric conversion layer formed in contact with the first electrode and above the charge accumulating electrode with an insulating layer interposed therebetween, and a second electrode formed on the photoelectric conversion layer. The isolation electrode includes a first isolation electrode and a second isolation electrode arranged with a space from the first isolation electrode, and the first isolation electrode is positioned between the first electrode and the second isolation electrode.