Disclosed is a radiation detection element including: an organic layer configured to generate an electric charge by receiving an incident radioactive ray; a first electrode layer arranged in one side of the organic layer; and a second electrode layer arranged in the other side of the organic layer to face the first electrode layer and provided with a first electrode pattern and a second electrode pattern spaced from the first electrode pattern.

A conductor structure includes a first metal layer, a second metal layer, and a controlling layer. The second metal layer is disposed on the first metal layer. A material of the first metal layer and a material of the second metal layer include at least one identical metal element. The controlling layer is disposed between the first metal layer and the second metal layer. A thickness of the controlling layer is less than a thickness of the first metal layer, and the thickness of the controlling layer is less than a thickness of the second metal layer.

A semiconductor device includes a first semiconductor layer of a first conductivity type having a first surface on one side thereof and a second surface on an opposite side thereof, and having an element therein, a second semiconductor layer of a second conductivity type having a circuit element formed therein, the second semiconductor layer being formed at the one side of the first surface of the first semiconductor layer, an insulating layer disposed on the first surface of the first semiconductor layer, and a charge-attracting layer configured to attract electrical charges generated in the insulating layer when a predetermined voltage is supplied to the charge-attracting layer.

Disclosed is a direct-conversion-type X-ray detector, including a first electrode on a substrate, a semiconductor structure including a photoconductor using a perovskite material on the first electrode, and a second electrode on the semiconductor structure.

A radiographic detection substrate, a manufacture method thereof, and a radiographic detection device are provided. The radiographic detection substrate includes a substrate; and a thin film transistor and a signal storage unit which are formed on the substrate; the thin film transistor includes a gate electrode, an insulating layer, an active layer, a source electrode, a drain electrode and a passivation layer which are sequentially formed on the substrate; the signal storage unit includes a storage capacitor, the storage capacitor includes a first electrode and a second electrode, the first electrode is formed on the insulating layer and lapped with the drain electrode, the second electrode is connected to a ground line; the passivation layer is formed on the source electrode, the drain electrode, the first electrode and the ground line. The present invention efficiently decreases the number of masking processes by at least one connection method selected from lapping the first electrode and the drain electrode, connecting the second electrode to the ground line through the first via hole, and connecting the third electrode to the first electrode via the second via hole, to simplify the manufacture process of the radiographic detection substrate and reduce the manufacture costs.

According to an embodiment, a photodetector includes a first photoelectric conversion element, a second photoelectric conversion element, and an absorption layer. The first photoelectric conversion element includes a first photoelectric conversion layer for converting energy of radiation into electric charges. The second photoelectric conversion element includes a second photoelectric conversion layer for converting energy of radiation into electric charges. The absorption layer is arranged between the first photoelectric conversion element and the second photoelectric conversion element to absorb radiation having energy equal to or lower than a threshold value.

Herein is disclosed a quantum cell from top to down including: an N-type ohmic contact electrode, an N-type ?-orbital semiconductor substrate, an N-type ?-orbital semiconductor epitaxy layer, a SiO.sub.2 passivation layer, a graphite contact layer, a Schottky contact electrode, a binding layer, and a radioisotope layer. The N-type ?-orbital semiconductor substrate includes an organic semiconductor material with an aromatic group or a semiconductor material with a carbon-carbon bond. The N-type ?-orbital semiconductor epitaxy layer has a doping concentration of 1?10.sup.13-5?10.sup.14 cm.sup.?3 and is formed by injection of a cationic complex in a dose of 6?10.sup.13-1?10.sup.15 cm.sup.?3.

An imaging detector, an imaging system having the imaging detector, and a method for manufacturing the imaging detector are disclosed. The imaging detector includes a substrate, a plurality of thin film transistors (TFTs) disposed on the substrate, a data line disposed on the substrate electrically coupled to at least two TFTs of the plurality of TFTs, a pixelated bottom electrode disposed on the substrate and laterally offset from the data line, a continuous organic photodiode layer, and a continuous top electrode layer overlaid on the continuous organic photodiode layer. The continuous organic photodiode layer is at least partially overlaid on the plurality of TFTs, the data line, and the pixelated bottom electrode and includes a first portion overlaid on the data line and a second portion overlaid on the pixelated bottom electrode. First portion is thicker than the second portion.

Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.

A semiconductor device includes a first semiconductor layer of a first conductivity type having a primary surface on one side thereof and a secondary surface on an opposite side thereof, and having a sensor therein, a second semiconductor layer of a second conductivity type having a circuit element formed therein, the second semiconductor layer being formed at said one side of the primary surface of the first semiconductor layer, an insulating layer formed between the first semiconductor layer and the second semiconductor layer, and being disposed on the primary surface of the first semiconductor layer, and a charge-attracting semiconductor layer of the first conductivity type configured to attract electrical charges generated in the insulating layer when a fixed voltage is supplied to the charge-attracting semiconductor layer.