An imaging element according to an embodiment of the present disclosure includes a photoelectric conversion layer including an organic photoelectric conversion material, a hole transporting material, and an electron transporting material, in which the electron transporting material includes a fullerene compound monomer and a fullerene compound dimer.

An optical semiconductor device includes a semiconductor substrate provided with a light receiving element; a transparent substrate facing a surface of the semiconductor substrate on which the light receiving element is provided; and an adhesive layer that bonds the semiconductor substrate and the transparent substrate. The adhesive layer is provided so as to surround the light receiving element. The adhesive layer has a refractive index of 1.60 or less.

An optical semiconductor device includes a semiconductor substrate provided with a light receiving element; a transparent substrate facing a surface of the semiconductor substrate on which the light receiving element is provided; and an adhesive layer that bonds the semiconductor substrate and the transparent substrate. The adhesive layer is provided so as to surround the light receiving element. The adhesive layer has a refractive index of 1.60 or less.

A perovskite photodiode includes a first electrode and a second electrode, and a perovskite photoelectric conversion layer between the first electrode and the second electrode and including a Pb-free perovskite, and an auxiliary layer between the first electrode and the perovskite photoelectric conversion layer, and including a compound represented by Chemical Formula 1.

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In Chemical Formula 1, X.sup.1, X.sup.2 and R.sup.1 to R.sup.6 are as defined in the specification.

A perovskite photodiode includes a first electrode and a second electrode, and a perovskite photoelectric conversion layer between the first electrode and the second electrode and including a Pb-free perovskite, and an auxiliary layer between the first electrode and the perovskite photoelectric conversion layer, and including a compound represented by Chemical Formula 1.

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In Chemical Formula 1, X.sup.1, X.sup.2 and R.sup.1 to R.sup.6 are as defined in the specification.

Provided in the present disclosure are a detection substrate and a detection apparatus. The detection substrate includes: a base substrate; a plurality of pixel driving circuits, which are located on the base substrate; a first insulating layer, which is located on the side, which faces away from the base substrate, of a layer where the pixel driving circuits are located, where the first insulating layer includes a plurality of first through holes; and a plurality of photosensitive devices, which are located on the side of the first insulating layer that faces away from the layer where the pixel driving circuits are located.

Provided in the present disclosure are a detection substrate and a detection apparatus. The detection substrate includes: a base substrate; a plurality of pixel driving circuits, which are located on the base substrate; a first insulating layer, which is located on the side, which faces away from the base substrate, of a layer where the pixel driving circuits are located, where the first insulating layer includes a plurality of first through holes; and a plurality of photosensitive devices, which are located on the side of the first insulating layer that faces away from the layer where the pixel driving circuits are located.

A photoelectric conversion device according to some example embodiments includes an upper electrode, a lower electrode, and an active layer including a donor material, an acceptor material, and a light-absorbing material and disposed between the upper electrode and the lower electrode, wherein the donor material includes a compound represented by Formula 1, and the light-absorbing material includes bis-(4-dimethylaminodithiobenzyl)-Ni(II) (BDN).

A photoelectric conversion device according to some example embodiments includes an upper electrode, a lower electrode, and an active layer including a donor material, an acceptor material, and a light-absorbing material and disposed between the upper electrode and the lower electrode, wherein the donor material includes a compound represented by Formula 1, and the light-absorbing material includes bis-(4-dimethylaminodithiobenzyl)-Ni(II) (BDN).

A flexible display module and a display terminal are provided. The flexible display module includes a plurality of island-shaped structures, a plurality of electrical connection structures, and a plurality of photosensitive structures. Two adjacent island-shaped structures are stretched and connected by the plurality of electrical connection structures. Each of the photosensitive structures is disposed between two adjacent island-shaped structures. The photosensitive structures are disposed on a side of the island-shaped structures away from a light-emitting direction of the flexible display module.