According to an aspect, a detection device includes: an optical sensor; a light source configured to emit light to the optical sensor; a detection signal amplifying circuit configured to convert a variation of current supplied from the optical sensor into a variation of voltage; and an analog-to-digital (A/D) conversion circuit configured to convert an output voltage signal after being converted into the voltage variation into a digital detection value. The A/D conversion circuit is configured to limit the detection value to a maximum digital gradation value or a minimum digital gradation value when the light source is off.

According to an aspect, a detection device includes: an optical sensor; a light source configured to emit light to the optical sensor; a detection signal amplifying circuit configured to convert a variation of current supplied from the optical sensor into a variation of voltage; and an analog-to-digital (A/D) conversion circuit configured to convert an output voltage signal after being converted into the voltage variation into a digital detection value. The A/D conversion circuit is configured to limit the detection value to a maximum digital gradation value or a minimum digital gradation value when the light source is off.

An imaging device includes: a photoelectric conversion film; a first electrode located above the photoelectric conversion film; a second electrode; a plug coupled to the second electrode; a protective film located above the second electrode; and a wiring line that electrically couples the first electrode to the second electrode. The protective film overlaps the entire plug and does not overlap the photoelectric conversion film in plan view. The second electrode includes a non-overlapping portion that does not overlap the protective film in plan view, and the wiring line is coupled to the non-overlapping portion of the second electrode.

An imaging device includes: a photoelectric conversion film; a first electrode located above the photoelectric conversion film; a second electrode; a plug coupled to the second electrode; a protective film located above the second electrode; and a wiring line that electrically couples the first electrode to the second electrode. The protective film overlaps the entire plug and does not overlap the photoelectric conversion film in plan view. The second electrode includes a non-overlapping portion that does not overlap the protective film in plan view, and the wiring line is coupled to the non-overlapping portion of the second electrode.

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; and an organic layer provided between the first electrode and the second electrode, and having a carrier mobility of 10.sup.5 cm.sup.2/Vs or more and 10.sup.2 cm.sup.2/Vs or less, a carrier lifetime of 0.010 s or more and 1.0 s or less, and a carrier range of 10 nm or more and 1 m or less.

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode disposed to be opposed to the first electrode; and an organic layer provided between the first electrode and the second electrode, and having a carrier mobility of 10.sup.5 cm.sup.2/Vs or more and 10.sup.2 cm.sup.2/Vs or less, a carrier lifetime of 0.010 s or more and 1.0 s or less, and a carrier range of 10 nm or more and 1 m or less.

The disclosure provides low-cost solution processible polycrystalline all-inorganic perovskite CsPb8r3 integrated on silicon thin film transistor panels for pixelated X-ray imagers. Some embodiments demonstrate 10-100 keV x-ray energy range with detection sensitivity of >100 C Gyair1 cm2 at pixel size less than 100 micrometers.

The disclosure provides low-cost solution processible polycrystalline all-inorganic perovskite CsPb8r3 integrated on silicon thin film transistor panels for pixelated X-ray imagers. Some embodiments demonstrate 10-100 keV x-ray energy range with detection sensitivity of >100 C Gyair1 cm2 at pixel size less than 100 micrometers.

An imaging element in one embodiment of the present disclosure includes a first electrode and a second electrode, a third electrode disposed opposed to the first electrode and the second electrode, a photoelectric conversion layer provided between the first electrode and the third electrode and between the second electrode and the third electrode, an insulating layer provided between the first electrode and the photoelectric conversion layer and between the second electrode and the photoelectric conversion layer and having an opening above the second electrode, a first layer provided between the photoelectric conversion layer and the insulating layer and formed at least above the first electrode, and a second layer formed at least above the second electrode while being electrically coupled to the second electrode via the opening and having a difference from the first layer in at least one of material composition, crystallinity, impurity concentration contained, or constituent element.

An imaging element in one embodiment of the present disclosure includes a first electrode and a second electrode, a third electrode disposed opposed to the first electrode and the second electrode, a photoelectric conversion layer provided between the first electrode and the third electrode and between the second electrode and the third electrode, an insulating layer provided between the first electrode and the photoelectric conversion layer and between the second electrode and the photoelectric conversion layer and having an opening above the second electrode, a first layer provided between the photoelectric conversion layer and the insulating layer and formed at least above the first electrode, and a second layer formed at least above the second electrode while being electrically coupled to the second electrode via the opening and having a difference from the first layer in at least one of material composition, crystallinity, impurity concentration contained, or constituent element.