A light-emitting element contains negative ions and positive ions, and includes a solid ionic layer, a layer containing quantum dots, and a cathode electrode and an anode electrode. The ionic layer includes a p-type doped region on the anode electrode side containing the negative ions in a higher quantity than the positive ions, an n-type doped region on the cathode electrode side containing the positive ions in a higher quantity than the negative ions, and a junction region between the p-type doped region and the n-type doped region. The layer containing the quantum dots is adjacent to the junction region. Alternatively, the quantum dots are contained in the junction region. Alternatively, the quantum dots are adjacent to the junction region.

A display panel comprises a first data line, a second data line electrically insulated from the first data line, and a first data connection line electrically connected to the first data line and disposed closer to the second data line than to the first data line in a first direction. The first data line, the second data line, and the first data connection line each comprise a line member extending in a second direction different from the first direction and comprise a first protrusion and a second protrusion both protruding from the line member and being wider than the line member in the first direction.

A display panel includes: a first display area having a plurality of sub-pixels; and a second display area adjacent to the first display area, wherein the second display area comprises: a pixel portion including at least one sub-pixel; and a plurality of transmissive portions surrounding the pixel portion in a plan view, wherein a sub-pixel circuit including transistors is in the second display area, the transistors being electrically connected to light-emitting diodes that correspond to the at least one sub-pixel, and wherein a portion of a wiring is between two adjacent transmissive portions among the plurality of transmissive portions, the wiring being electrically connected to the sub-pixel circuit.

According to one embodiment, a manufacturing method of a display device includes forming a lower electrode, forming an insulating layer overlapping the lower electrode, forming a first aluminum layer above the insulating layer, cooling the first aluminum layer, forming a second aluminum layer on the first aluminum layer, forming a thin film above the second aluminum layer, forming a partition including a lower portion and an upper portion, the second aluminum layer and the thin film, forming an organic layer located on the lower electrode, and forming an upper electrode which is located on the organic layer and is in contact with the lower portion of the partition.

A display device according to an embodiment includes a display portion, a color converting portion, and a sealant for bonding the display portion and the color converting portion. The color converting portion includes a substrate, a bank disposed on the substrate and including an opening, a color converting layer disposed in the opening of the bank, and a pattern disposed between the bank and the sealant. A thickness of the pattern is reduced toward an outside of the color converting portion.

A display device according to an embodiment includes a display portion, a color converting portion, and a sealant for bonding the display portion and the color converting portion. The color converting portion includes a substrate, a bank disposed on the substrate and including an opening, a color converting layer disposed in the opening of the bank, and a pattern disposed between the bank and the sealant. A thickness of the pattern is reduced toward an outside of the color converting portion.

A quantum dot light-emitting diode substrate having a bonding layer and a method of preparing the same are provided. The quantum dot light-emitting diode substrate including a plurality of sub-pixel light-emitting regions, wherein each of the sub-pixel light-emitting regions includes a light-emitting layer including a bonding layer and a quantum dot bonded to the bonding layer. The quantum dot light-emitting diode substrate can be prepared with high resolution by a convenient process, and is suitable for mass production.

A display device includes a first light emitting element, a second light emitting element, and a third light emitting element that are disposed on a substrate and emitting light of different colors, respectively; a first insulation layer disposed on the first light emitting element, the second light emitting element, and the third light emitting element, and including at least one opening; and a second insulation layer disposed on the first insulation layer, and disposed in the at least one opening, wherein a refractive index of the second insulation layer is higher than a refractive index of the first insulation layer, and the at least one opening overlaps at least one of the first light emitting element, the second light emitting element, and the third light emitting element in a plan view, and does not overlap at least another one in a plan view.

A novel display apparatus is provided. The display apparatus includes a first layer including a plurality of pixel circuits, a second layer provided over the first layer, a plurality of optical lenses provided over the second layer, a display region, and a plurality of light-receiving regions. The display region includes a first pixel circuit provided in the first layer and a light-emitting device provided in the second layer. The light-receiving region includes a second pixel circuit provided in the first layer and a light-receiving device provided in the second layer. The plurality of light-receiving regions are provided around the display region. The optical lens is provided at a position overlapping with the light-receiving region.

Provided is a display device comprising a substrate; a plurality of transistors disposed on the substrate; a first pixel electrode, a second pixel electrode, and a third pixel electrode respectively connected to the transistors; a first emission layer disposed to overlap the first pixel electrode, a second emission layer disposed to overlap the second pixel electrode, and a third emission layer disposed to overlap the third pixel electrode; and a common electrode disposed on the first emission layer, the second emission layer, and the third emission layer, wherein the first pixel electrode includes a first layer, and a second layer disposed on the first layer and including a Ga-doped ITO.