A series of thermally stable and highly luminescent cyclometalated tetradentate ligand-containing gold(III) compounds was designed and synthesized. The cyclometalated tetradentate ligand-containing gold(III) compounds can be used as light-emitting material for fabrication of light-emitting devices. The cyclometalated tetradentate ligand-containing gold(III) compounds can be deposited as a layer or a component of a layer using a solution-processing technique or a vacuum deposition process. The cyclometalated tetradentate ligand-containing gold(III) compounds are robust and can provide electroluminescence with high efficiency and brightness. More importantly, the vacuum-deposited OLEDs demonstrate long operational stabilities with half-lifetime of over 29,700 hours at 100 cd m.sup.−2.

This hole collection layer composition for an organic photoelectric conversion elements comprises: a charge-transporting substance formed of a polyaniline derivative represented by formula (1); fluorochemical surfactant; metal oxide nanoparticles; and a solvent. The hole collection layer composition provides a thin film having excellent adhesiveness to an active layer of an organic photoelectric conversion element. ##STR00001## {R.sup.1-R.sup.6 are each independently a hydrogen atom, a halogen atom, a nitro group, a cyano group, a sulfonic acid group, a C.sub.1-C.sub.20 alkoxy group, a C.sub.1-C.sub.20 thioalkoxy group, a C.sub.1-C.sub.20 alkyl group, etc. Meanwhile, one of R.sup.1-R.sup.4 is a sulfonic acid group and at least one of the remaining R.sup.1-R.sup.4 is a C.sub.1-C.sub.20 alkoxy group, a C.sub.1-C.sub.20 thioalkoxy group, a C.sub.1-C.sub.20 alkyl group, etc., and m and n are numbers that satisfy 0≤m≤1, 0≤n≤1, and m+n=1.}

The present specification relates to a polymer comprising a unit represented by Chemical Formula 1, a monomer represented by Chemical Formula 2, a coating composition comprising the same, an organic light emitting device formed using the same, and a method for manufacturing an organic light emitting device using the same:

##STR00001##

wherein the variables are described herein.

There is provided a semiconductor film that includes an aggregate of semiconductor quantum dots that contain a Pb atom, and a ligand that is coordinated to the semiconductor quantum dot, in which a ratio of the number of Pb atoms having a valence of 1 or less to the number of Pb atoms having a valence of 2 is 0.20 or less. There are also provided a photodetector element, an image sensor, and a manufacturing method for a semiconductor film.

Disclosed are an array substrate and a fabricating method therefor, a display panel, and a display device, and relating to the technical field of display. The method comprises: forming a patterned film layer on one side of a substrate, the patterned film layer comprising a plurality of recesses; and palcing a first precursor structure in the recesses, and the material of the first precursor structure comprises a first precursor; and placeing in the environment of a gaseous second precursor the substrate having the first precursor structure formed thereon to cause the reaction between the gaseous second precursor and the first precursor structure to form a perovskite crystal structure, wherein one of the first precursor and the second precursor comprises a metal halide, and the other comprises one of a formamidine halide, a methylamine halide, a cesium halide, and hydrogen sulfide, thereby achieving the manufacture of a perovskite microarray structure.

The present invention is directed to a method for preparing a device, the method comprising: forming a first layer on top of a first electrode, the layer comprising a metal oxide that is formed by the deposition of a metal oxide precursor composition that can be directly patterned by means of exposure to electromagnetic radiation to form a patterned metal oxide layer, optionally forming a second electrode over the first device layer, wherein the method further includes optionally forming a layer comprising quantum dots on top of the first layer or after formation of the first layer, and to a device comprising a first layer comprising a metal oxide prepared by the method of the invention.

An optical element includes a photoelectric conversion film and an inorganic substance-containing film containing at least one selected from the group consisting of a metal nitride and a metal oxynitride, in which the photoelectric conversion film contains a quantum dot or at least one compound semiconductor selected from the group consisting of a III-V group compound semiconductor, a II-VI group compound semiconductor, and a IV-IV group compound semiconductor, and the optical density of an inorganic substance-containing film is 0.5 or more per 1.0 μm of a film thickness at a wavelength of 1,550 nm.

A method of manufacturing microstructure array, a microstructure array, a micro-light-emitting diode, and a method for manufacturing the same, and a display device. The method of manufacturing microstructure array includes: preparing a red light-emitting perovskite precursor solution, a green light-emitting perovskite precursor solution, and a blue light-emitting perovskite precursor solution; coating the red light-emitting perovskite precursor solution, the green light-emitting perovskite precursor solution, and the blue light-emitting perovskite precursor solution, on a substrate having partitioned first, second, and third regions to form a red light-emitting perovskite precursor film, a green light-emitting perovskite precursor film, and a blue light-emitting perovskite precursor film, respectively; disposing a mold having a plurality of concave micropatterns on the red light-emitting perovskite precursor film, the green light-emitting perovskite precursor film, and the blue light-emitting perovskite precursor film, respectively; heat-treating the red light-emitting perovskite precursor film, the green light-emitting perovskite precursor film, and the blue light-emitting perovskite precursor film in a plurality of concave micropatterns to obtain each of red light-emitting perovskite nanocrystals, green light-emitting perovskite nanocrystals, and blue light-emitting perovskite nanocrystals, and removing the mold to form a microstructure array.

A light-emitting device is provided. The light-emitting device includes an anode, a cathode, and a combined charge transport and emissive layer (CCTEL) disposed between the anode and the cathode. The CCTEL includes a crosslinked charge transport material, a first plurality of quantum dots having a first energy gap, and a second plurality of quantum dots having a second energy gap wider than the first energy gap.

The invention relates to an optoelectronic and/or photoelectrochemical device including a conductive support layer, n-type semiconductor, a sensitizer or light-absorber layer, a hole transporting layer, a spacer layer and a back contact, wherein the n-type semiconductor is in contact with the sensitizer or light-absorber layer, the sensitizer or light-absorber layer includes a perovskite or metal halide perovskite material, the hole transporting layer is in direct contact with the sensitizer or light-absorber layer and includes an inorganic hole transporting material or inorganic p-type semiconductor, the spacer layer is between the hole transporting layer and the back contact and includes a material being different from the inorganic hole transporting material and the material of the back contact.