A method of forming a perovskite thin film and a light-emitting device including a layer manufactured by the method.

The invention relates to organic electroluminescence devices containing indone carbazole derivatives.

Disclosed is a compound represented by chemical formula (1). In addition, disclosed is an organic electronic element comprising: a first electrode; a second electrode; and an organic layer between the first electrode and the second electrode, wherein the organic layer contains the compound represented by chemical formula (1). Light-emitting efficiency, stability and lifespan may be enhanced when the compound represented by chemical formula (1) is contained in the organic layer.

One embodiment relates to an organic electronic material containing a charge transport polymer, wherein the charge transport polymer is a polymer which, when 25 μL portions of methanol are added dropwise and stirred into 1,000 μL of a solution containing the charge transport polymer and toluene in a ratio of 20 mg of the charge transport polymer per 2,290 μL of toluene, the amount of methanol added by the time cloudiness develops in the solution is greater than 350 μL.

Provided are an inverted thick 2D hybrid perovskite solar cell insensitive to film thickness and a preparation method thereof, belonging to the field of organic-inorganic hybrid perovskite materials. The solar cell adopts a 2D hybrid perovskite thick-film material as a light absorption layer having thickness in a range of 500-800 nm, which is conducive to the full absorption of sunlight. The thick-film film material can be deposited from a precursor solution added with guanidine hydroiodide, and is composed of large grains growing along the thickness direction. The solar cell with an inverted structure prepared by using the thick-film material as a light absorption layer has an efficiency fluctuation less than 5% in a film thickness range of 500-800 nm. This is of great value for the preparation of high-performance hybrid perovskite solar cells by a large-area solution method.

The present invention provides a method of forming a crystalline or polycrystalline layer of an organic-inorganic metal halide perovskite material comprising a three-dimensional crystal structure represented by the formula AMX.sub.3, in which A represents an organic cation or a mixture of two or more different cations, at least one of which is an organic cation, M represents a divalent metal cation or a mixture of two or more different divalent metal cations, and X represents halide anions which are the same or different, the method comprising the steps of: (i) forming a first layer on the surface of a substrate, the first layer comprising an organic-inorganic metal halide perovskite material having a planar, layered two-dimensional crystal structure (ii) reacting the first layer with one or more organic halides to form the crystalline or polycrystalline layer comprising an organic-inorganic metal halide perovskite material having the formula AMX.sub.3. Also provided is an optoelectronic or photovoltaic device including an active layer comprising an organic-inorganic metal halide perovskite material comprising a three-dimensional crystal structure represented by the formula AMX.sub.3, wherein the material is obtainable using the above defined method.

Disclosed are a display substrate, a preparation method thereof, and a display apparatus. The display substrate includes: a driving substrate, a first electrode, an auxiliary electrode, a pixel definition layer and a hole injection layer. The driving substrate includes a driving circuit and a dielectric layer covering the driving circuit; the first electrode and the auxiliary electrode are on a side of the dielectric layer of the driving substrate away from the driving circuit; the auxiliary electrode at least partially surrounds the first electrode; the pixel definition layer is on a side of the first electrode and the auxiliary electrode away from the driving substrate; the pixel definition layer includes a pixel opening, and the first electrode is at least partially exposed through the pixel opening and is electrically connected to the driving circuit; and the hole injection layer is in the pixel opening and stacked with the first electrode.

Provided is a light emitting device including a lower electrode, an upper electrode disposed to face the lower electrode, a quantum dot light emitting layer between the lower electrode and the upper electrode, an electron transport layer between the lower electrode and the quantum dot light emitting layer, and a hole transport layer between the upper electrode and the quantum dot light emitting layer, wherein the quantum dot light emitting layer includes a quantum dot, and a first ligand on a surface of the quantum dot, and a second ligand on the surface of the quantum dot.

An electroluminescent device includes a first electrode and a second electrode facing each other, and a light emitting layer disposed between the first electrode and the second electrode, where the light emitting layer includes a first light emitting layer including a first quantum dot and a second light emitting layer including a second quantum dot and an n-type metal oxide.

A display device provided with a display region including a plurality of pixels and a frame region surrounding the display region includes a thin film transistor layer, a light-emitting element layer including a plurality of light-emitting elements, each including a first electrode, a light emitting layer, and a second electrode, and each having a different luminescent color. In the light-emitting layer, an oxetane monomer, an epoxy monomer, and a radical polymerization initiator are used.