Disclosed is a display substrate, comprising a display area and a non-display area surrounding the display area. At least one limit mark group is disposed in the non-display area; the display area has a plurality of sides, and rounded chamfers are formed between adjacent two sides; the non-display area includes a frame part opposite to the sides of the display area and corner parts opposite to the rounded chamfers; and the limit mark group is located at the corner part. Accordingly, the disclosure also provides an organic light emitting device, a film vapor-deposition detecting method of an organic light emitting device, and a display device. According to the disclosure, it is possible to reduce the display defect and the accuracy of film vapor-deposition detection.

An organic compound is represented by formula (1). In the formula (1), R.sub.1 to R.sub.24 are each independently selected from the group consisting of a hydrogen atom, a halogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted amino group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heterocyclic group, a substituted or unsubstituted aryloxy group, a silyl group, and a cyano group. ##STR00001##

An organic-light-emitting-diode device and a fabricating method thereof, a displaying base plate and a displaying device, wherein the organic-light-emitting-diode device includes a substrate, and an anode layer, an organic functional layer and a cathode layer that are provided in stacking on one side of the substrate, wherein the organic functional layer includes a first functional layer, a second functional layer and a light emitting layer that are provided in stacking, and the first functional layer is provided closer to the anode layer; and a HOMO energy level of the second functional layer is deeper than both of a HOMO energy level of the first functional layer and a HOMO energy level of a host material of the light emitting layer.

Organic vapor jet printing (OVJP) devices and techniques are provided that use a solid materials sublimation source to provide material for deposition on a substrate. Carrier gas from a carrier gas source entrains vapor from the solid material within each sublimation source for transport to a print head within a deposition chamber. The sublimation source includes a sufficiently long internal flow path to achieve an acceptable level of material saturation of the carrier gas.

The present invention relates to organic electroluminescent devices, the emitting layer thereof containing a blend of a luminescent material having a narrow singlet-triplet gap and a fluorescent emission material having high steric shielding.

A self-aligned short-channel SASC electronic device includes a first semiconductor layer formed on a substrate; a first metal layer formed on a first portion of the first semiconductor layer; a first dielectric layer formed on the first metal layer and extended with a dielectric extension on a second portion of the first semiconductor layer that extends from the first portion of the first semiconductor layer, the dielectric extension defining a channel length of a channel in the first semiconductor layer; and a gate electrode formed on the substrate and capacitively coupled with the channel. The dielectric extension is conformally grown on the first semiconductor layer in a self-aligned manner. The channel length is less than about 800 nm, preferably, less than about 200 nm, more preferably, about 135 nm.

The invention relates to an organic molecule, in particular for the application in optoelectronic devices. According to the invention, the organic molecule has a structure of formula (I) wherein R.sup.I, R.sup.II, R.sup.III, R.sup.IV, R.sup.V, R.sup.VI, R.sup.VII, R.sup.VIII, R.sup.IX, R.sup.X and R.sup.XI are independently selected from the group consisting of: hydrogen, deuterium, halogen, C.sub.1-C.sub.12-alkyl, wherein optionally one or more hydrogen atoms are independently substituted by R.sup.5; C.sub.6-C.sub.18-aryl, wherein optionally one or more hydrogen atoms are independently substituted R.sup.5; R.sup.5 is at each occurrence independently selected from the group consisting of: hydrogen, deuterium C.sub.1-C.sub.12-alkyl, C.sub.6-C.sub.18-aryl, wherein optionally one or more hydrogen atoms are independently substituted by C.sub.1-C.sub.5-alkyl substituents; at least one of R.sup.I, R.sup.II, R.sup.III, R.sup.IV, R.sup.V and at least one of R.sup.VI, R.sup.VII, R.sup.VIII, R.sup.IX or R.sup.X is selected from the group of: C.sub.1-C.sub.12-alkyl, wherein optionally one or more hydrogen atoms are independently substituted by R.sup.5; C.sub.6-C.sub.18-aryl, wherein optionally one or more hydrogen atoms are independently substituted by R.sup.5; and each hydrogen may independently be substituted by deuterium or halogen.

##STR00001##

A mask assembly includes a first mask having a first opening and at least one second mask disposed on the first mask, each at least one second mask including a deposition area having second openings, an inner area surrounding the deposition area, and an outer area having third openings which surround the margin area. A line defining the outer boundary of an inner surface which defines the first opening overlaps the inner area when viewed in plan.

A mask assembly and an apparatus and method for manufacturing a display apparatus are provided. A mask assembly includes a mask frame and a mask on the mask frame and having at least one opening. The mask includes a mask body portion having the at least one opening, and a protruding portion arranged to surround the at least one opening and including an inner surface defining the at least one opening, the protruding portion protruding from the mask body portion and configured to protrude toward a display substrate and contact the display substrate. A deposition material is configured to pass through the at least one opening to be deposited in an entire display area of a display panel including a plurality of pixels.

The disclosure pertains to an organic molecule for use in optoelectronic devices. The organic molecule has a structure of Formula I:

##STR00001## wherein X is selected from the group consisting of a direct bond, NR.sup.1, O, S, SiR.sup.1R.sup.2 and CR.sup.1R.sup.2; Y is selected from the group consisting of a direct bond, NR.sup.3, O, S, SiR.sup.3R.sup.4 and CR.sup.3R.sup.4; and R.sup.1, R.sup.2, R.sup.3, and R.sup.4 are each independently selected from the group consisting of: hydrogen, deuterium, N(R.sup.5).sub.2, OR.sup.5, SR.sup.5, Si(R.sup.5).sub.3, B(OR.sup.5).sub.2, OSO.sub.2R.sup.5, CF.sub.3, CN, halogen, C.sub.1-C.sub.40-alkyl, C.sub.1-C.sub.40-alkoxy, C.sub.1-C.sub.40-thioalkoxy, C.sub.2-C.sub.40-alkenyl, C.sub.2-C.sub.40-alkynyl, C.sub.6-C.sub.60-aryl, and C.sub.3-C.sub.57-heteroaryl.