A mixed layer including: a matrix material; and a dopant composition, wherein the dopant composition is doped in the matrix material, the dopant composition comprises a first dopant and a second dopant, an amount by weight of the matrix material is greater than an amount by weight of the dopant composition in the mixed layer, the matrix material, the first dopant, and the second dopant are different from each other, the matrix material does not include a transition metal, the first dopant includes a transition metal, the mixed layer is a layer formed by deposition of the matrix material, the first dopant, and the second dopant, the mixed layer has a concentration profile of the dopant composition with respect to a thickness of the mixed layer, provided that T.sub.m1>T.sub.p>T.sub.m1+2 is satisfied, wherein T.sub.m1, T.sub.p, and T.sub.m1+2 are respectively as described herein.

A deposition device according to an embodiment includes a first deposition source, a second deposition source, and a third deposition source arranged sequentially in a first direction, a first angle limitation plate disposed outside of the first deposition source, a second angle limitation plate disposed between the first deposition source and the second deposition source, a third angle limitation plate disposed between the second deposition source and the third deposition source, and a fourth angle limitation plate disposed outside the third deposition source. A deposition material of the first deposition source and a deposition material of the third deposition source include a same dopant material. A deposition material of the second deposition source includes a host material.

A compound represented by Chemical Formula 1, a sensor including the compound, a sensor-embedded display panel including the compound, and an electronic device including the compound.

##STR00001##

In Chemical Formula 1, X.sup.1, X.sup.2, X.sup.3, Ar.sup.1, L.sup.1, A, R1, and R.sup.2 are the same as in the specification.

A compound represented by Chemical Formula 1, a sensor including the compound, a sensor-embedded display panel including the compound, and an electronic device including the compound.

##STR00001##

In Chemical Formula 1, X.sup.1, X.sup.2, X.sup.3, Ar.sup.1, L.sup.1, A, R1, and R.sup.2 are the same as in the specification.

In an organic EL display device (electroluminescent device) including an organic EL element (electroluminescent element), a sealing film is provided to seal the organic EL element. The sealing film includes a first inorganic layer, a first organic layer, a second inorganic layer, a second organic layer, and a third inorganic layer (uppermost inorganic layer), which are arranged in this order. The first and second organic layers are formed so that the thickness of the end portions gradually decreases from the thickness of the central portions. The third inorganic layer is provided to cover the end portions of each of the first inorganic layer, the first organic layer, the second inorganic layer, and the second organic layer.

Embodiments of the disclosed subject matter provide a device including a carrier plate, and a die including a mating surface with a patterned thin film of metal or metal oxide surface bonded to the carrier plate using a solder preform with voids that overlay the patterned thin film on the die, where the oxide surface is disposed opposite a moat in a mating surface of the carrier plate, and where the voided regions remain free of solder when the solder is reflowed.

Embodiments of the disclosed subject matter provide a device including a carrier plate, and a die including a mating surface with a patterned thin film of metal or metal oxide surface bonded to the carrier plate using a solder preform with voids that overlay the patterned thin film on the die, where the oxide surface is disposed opposite a moat in a mating surface of the carrier plate, and where the voided regions remain free of solder when the solder is reflowed.

An organic light emitting display device may include a substrate, a first pixel electrode on the substrate, a pixel defining layer on the substrate, the pixel defining layer having an opening exposing a portion of the first pixel electrode, a second pixel electrode on the portion of the first pixel electrode exposed by the opening, a hole injection layer on the second pixel electrode, the hole injection layer including a metal oxide, an organic light emitting layer on the hole injection layer; and a common electrode on the organic light emitting layer.

Embodiments of the disclosed subject matter provide methods and systems including a nozzle, a source of material to be deposited on a substrate in fluid communication with the nozzle, a delivery gas source in fluid communication with the source of material to be deposited with the nozzle, an exhaust channel disposed adjacent to the nozzle, a confinement gas source in fluid communication with the nozzle and the exhaust channel, and disposed adjacent to the exhaust channel, and an actuator to adjust a fly height separation between a deposition nozzle aperture of the nozzle and a deposition target. The adjustment of the fly height separation may stop and/or start the deposition of the material from the nozzle.

An integrated optoelectronic device includes a substrate which supports a passive waveguide for index-confining, in two transverse directions, and guiding, along a longitudinal direction, at least one optical mode. The devices further include a first charge transport layer for transporting charge carriers of a first conductivity type, a second charge transport layer for transporting charge carriers of a second conductivity type, opposite to the first conductivity type, and an active layer comprising a particulate film of solution-processable semiconductor nanocrystals. The active layer is arranged relative to the charge transport layers to form a diode junction. The active layer and the first and the second charge transport layer are further formed on the substrate such that they each overlap at least a portion of the waveguide in a cross-section perpendicular to the longitudinal direction. The active layer is evanescently coupled to the waveguide.