A deposition mask apparatus including a frame, a supporter including a plurality of supporting members fixed to the frame, and a deposition mask fixed to the frame is provided. The plurality of supporting members include at least a first supporting member that is closest to an intermediate position between a third portion and a fourth portion of the frame and a second supporting member that is located closer to the third portion of the frame than the first supporting member. The first supporting member in a state of warping downward from the frame with a first warping amount supports the deposition mask from below. The second supporting member in a state of warping downward from the frame with a second warping amount that is smaller than the first warping amount supports the deposition mask from below.

The invention relates to an organic molecule, in particular for the application in optoelectronic devices. According to the invention, the organic molecule is represented by a plurality of units, wherein each unit includes or consists of a structure represented by Formula I

##STR00001##

wherein

n=0 or 1; and

X is at each occurrence independently selected from the group consisting of a direct bond, CR.sup.3R.sup.4, C═CR.sup.3R.sup.4, C═O, C═NR.sup.3, NR.sup.3, O, SiR.sup.3R.sup.4, S, S(O) and S(O).sub.2.

A method of manufacturing a mask, includes forming an organic material layer on a mask substrate and patterning a hard mask on the organic material layer, etching the organic material layer to form a mask sheet including through holes, removing the hard mask on the mask sheet, forming a conductive material layer on the mask sheet, and etching the conductive material layer to form a conductive layer.

The present application provides a method for preparing a perovskite film, and a related perovskite film, solar cell and solar cell device thereof. The preparation method may include the steps of (1) providing a target material comprising the following elements: lead, a halogen, and one or more alkali metals; (2) sputtering using the target material in step (1), where a process gas is a noble gas, optionally, argon, so as to obtain a film; (3) subjecting the film obtained in step (2) to a chemical bath treatment, wherein the chemical bath is a solution of AX, A is selected from one or more of formamidine or methylamine, and X is a halogen; and (4) sputtering on the film obtained in step (3) using a tin metal, where a process gas comprises a noble gas, optionally, a mixture of argon and a halogen gas, so as to obtain the perovskite film.

A mask frame assembly includes: a mask including a plurality of opening portions; and a frame coupled to an edge of the mask, wherein the mask includes: first shielding portions extending in a first direction and parallel to each other; second shielding portions parallel to each other and extending in a second direction crossing the first direction, such that the plurality of opening portions are defined together with the first shielding portions; and a first protrusion on the first shielding portion, wherein, in the second direction, a distance from an opening portion on one side of the first shielding portion is different from a distance from an opening portion on another side of the first shielding portion.

The invention provides a red organic electroluminescent device, composed of a substrate, an anode layer, an anode modification layer, a hole transporting-electron blocking layer, a hole-dominated light-emitting layer, an electron-dominated light-emitting layer, a hole blocking-electron transporting layer, a cathode modification layer, and a cathode layer arranged in turn, wherein the electron-dominated light-emitting layer is composed of an organic sensitive material, a red organic light-emitting material, and an electron-type organic host material. A rare earth complex having a matched energy level, such as Eu(DBM).sub.3phen or Eu(TTA).sub.3phen is selected as the organic sensitive material, and a trace amount of the same is doped into the electron-dominated light-emitting layer, which has the function of an energy transporting ladder and a deep binding center for charge carriers, so as to improve the light-emitting effectiveness, spectral stability, and service life of the device, reduce the operating voltage of the device, and delay the attenuation of the effectiveness of the device.

A method of manufacturing a film includes disposing a substrate under one side of a baffle plate in a film manufacturing space, the baffle plate having a plurality of through-holes, and spraying an inert gas toward the substrate through a plurality of nozzle tips branched from a gas distribution pipe that is disposed over an other side of the baffle plate such that the inert gas penetrates the baffle plate through the through-holes.

Embodiments described herein provide methods for processing various polymer materials for use in devices, such as photovoltaic devices. In some cases, oxidative chemical vapor deposition (oCVD) may be used to process conjugated polymers, including relatively insoluble conjugated polymers. The methods described herein provide processing techniques that may be used to synthesize and/or process polymers, such as unsubstituted thiophene.

The embodiments of the present disclosure provide an organic light emitting device including a first electrode, a second electrode, and an organic functional layer, wherein the organic functional layer includes a first doped layer fabricated in a first process, a second doped layer fabricated in a second process, and an auxiliary layer formed between the first doped layer and the second doped layer, wherein the auxiliary layer is used to improve the performance of the first doped layer. The embodiments of the present disclosure further provide a method for fabricating the organic light emitting device. The embodiments of the present disclosure also provide a display apparatus including the organic light emitting device.

A method of forming a semiconductor film at pressure between 10.sup.−5 atm and 10 atm in the presence of a substrate includes (i) providing a precursor material in a reaction container; (ii) arranging the substrate on the reaction container such that a conductive surface of the substrate is facing towards the precursor material; and (iii) conducting a heat treatment to deposit a semiconductor layer on the conductive surface of the substrate. A semiconductor film is obtained from this method and a device comprising such semiconductor film is also provided.