A method for producing a patterned organic film includes: forming a hydrophobic organic film on a hydrophilic and non-water-soluble first substrate using a coating method, pressing the organic film formed on the first substrate against a convex portion of a stamp having the convex portion and a concave portion, transferring the organic film to the convex portion by applying water or an aqueous solution to an interface between the first substrate and the organic film, and pressing the organic film transferred to the convex portion against a second substrate to transfer the organic film to the second substrate to obtain a patterned organic film, wherein at least one of the organic film and the second substrate is an organic semiconductor.

A manufacturing method of a display device includes: stacking a release layer over a first substrate; forming a conductor pattern over the release layer; forming a sacrificial layer over the conductor pattern; forming a second substrate including a polymer layer over the sacrificial layer; forming an electronic element including a conductor over the second substrate; forming a pattern corresponding to the conductor pattern in the sacrificial layer; transferring the conductor pattern from the release layer to a surface of the second substrate; and removing the first substrate, the release layer, and the sacrificial layer.

This disclosure is related to arranging micro devices in the donor substrate by either patterning or population so that there is no interfering with non-receiving pads and the non-interfering area in the donor substrate is maximized. This enables the transfer of micro devices to a receiver substrate with fewer steps.

An organic light emitting display device includes a substrate having a first width in a first direction and a second width in a second direction, the second width being perpendicular to and smaller than the first width, and pixel regions on the substrate, each of the pixel regions including a first light emitting portion, a second light emitting portion, a third light emitting portion, and a transmission portion arranged along the second direction, each of the first to third light emitting portions extending in the first direction.

An electrostatic chuck system includes an electrostatic chuck with a plurality of unit chucks supporting a display substrate, an optical photomask on the display substrate, the optical photomask having a material to be transferred onto the display substrate, a light source on the optical photomask, a gap measuring meter for measuring a gap between the display substrate and the optical photomask, a power source unit for applying power to each of the plurality of unit chucks through variable resistance units respectively connected to the plurality of unit chucks, and a control unit electrically connected to the gap measuring meter, the variable resistance units, and the power source unit, and transmits a signal for adjusting the gap.

A method and structure for providing uniform, large-area graphene by way of a transfer-free, direct-growth process. In some embodiments, a SAM is used as a carbon source for direct graphene synthesis on a substrate. For example, a SAM is formed on an insulating surface, and a metal layer is formed over the SAM. The metal layer may serve as a catalytic metal, whereby the SAM is converted to graphene following an annealing process. The SAM is deposited using a VPD process (e.g., an ALD process and/or an MLD process). In some embodiments, a CNT having a controlled diameter may be formed on the surface of a nanorod by appropriately tuning the geometry of the nanorod. Additionally, in some embodiments, a curved graphene transistor may be formed over a curved oxide surface, thereby providing a band gap in a channel region of the graphene transistor.

Provided are organic luminescence display and method for manufacturing the same. According to an aspect of the present invention, there is provided an organic luminescence display comprising a substrate and a plurality of pixels disposed on the substrate. The pixels comprise a plurality of first pixels, each comprising a first organic light-emitting layer, and a plurality of second pixels which are smaller than the first pixels and each of which comprises a second organic light-emitting layer. The surface roughness of the second organic light-emitting layer is greater than the surface roughness of the first organic light-emitting layer.

A displaying base plate including multiple pixels. The first sub-pixel includes a first electrode, a first inorganic layer and a first quantum-dot layer sequentially stacked; the first inorganic layer includes a first inorganic material modified by a first group, and the first quantum-dot layer includes a first quantum dot modified by a first ligand; the second sub-pixel includes a second electrode, a second inorganic layer and a second quantum-dot layer sequentially stacked; the second inorganic layer includes a second inorganic material modified by a second group, and the second quantum-dot layer includes a second quantum dot modified by a second ligand; the third sub-pixel includes a third electrode, a third inorganic layer and a third quantum-dot layer sequentially stacked; and the third inorganic layer includes a third inorganic material modified by a third group, and the third quantum-dot layer includes a third quantum dot modified by a third ligand.

An apparatus for material deposition on an acceptor surface includes a transparent donor substrate having opposing first and second surfaces, such that at least a part of the second surface is not parallel to the acceptor surface, and including a donor film on the second surface. The apparatus additionally includes an optical assembly, which is configured to direct a beam of radiation to pass through the first surface of the donor substrate and impinge on the donor film at a location on the part of the second surface that is not parallel to the acceptor surface, so as to induce ejection of droplets of molten material from the donor film onto the acceptor surface.

In a method of forming a gate-all-around field effect transistor (GAA FET), a fin structure including CNTs embedded in a semiconductor layer is formed, a sacrificial gate structure is formed over the fin structure, the semiconductor layer is doped at a source/drain region of the fin structure, an isolation insulating layer is formed, a source/drain opening is formed by patterning the isolation insulating layer, and a source/drain contact layer is formed over the doped source/drain region of the fin structure.