An improved silicon carbide wafer using direct application conductive ink interconnects positioned on printing connection pads. The conductive ink interconnected can be routed to form a custom length resistive trace for a device after fabrication and measurement of the device.

Provided is a method of manufacturing an electroluminescent device including: forming a first electrode layer on a substrate; forming a hole transport layer on the first electrode layer; forming a light emitting layer on the hole transport layer by using a transfer printing process; forming an electron transport layer on the light emitting layer; and forming a second electrode layer on the electron transport layer. Therefore, in the present disclosure, the manufacturing method of forming the light-emitting layer through the transfer printing process has the advantage of rapid manufacturing, and is suitable for manufacturing light emitting devices with a large area and any shape.

Provided is a method of manufacturing an electroluminescent device including: forming a first electrode layer on a substrate; forming a hole transport layer on the first electrode layer; forming a light emitting layer on the hole transport layer by using a transfer printing process; forming an electron transport layer on the light emitting layer; and forming a second electrode layer on the electron transport layer. Therefore, in the present disclosure, the manufacturing method of forming the light-emitting layer through the transfer printing process has the advantage of rapid manufacturing, and is suitable for manufacturing light emitting devices with a large area and any shape.

In a method of forming a gate-all-around field effect transistor (GAA FET), a fin structure including carbon nanotubes (CNTs) embedded in a semiconductor layer is formed, a sacrificial gate structure is formed over the fin structure, the semiconductor layer is doped at a source/drain region of the fin structure, an interlayer dielectric (ILD) layer is formed over the doped source/drain region and the sacrificial gate structure, a source/drain opening is formed by patterning the ILD layer, and a source/drain contact layer is formed over the doped source/drain region of the fin structure.

Methods and devices for controlling pressures in microenvironments between a deposition apparatus and a substrate are provided. Each microenvironment is associated with an aperture of the deposition apparatus which can allow for control of the microenvironment.

Methods and devices for controlling pressures in microenvironments between a deposition apparatus and a substrate are provided. Each microenvironment is associated with an aperture of the deposition apparatus which can allow for control of the microenvironment.

A method of manufacturing a display device includes: providing a first substrate, a second substrate, and a plurality of connection lines, wherein the first substrate has a base substrate, wherein the second substrate faces the first substrate, and wherein the plurality of connection lines are disposed between the base substrate and the second substrate; grinding a side surface of the base substrate, a side surface of the second substrate, and side surfaces of the plurality of connection lines; and simultaneously transferring a conductive film and laser-curing the conductive film, wherein the conductive film is transferred to the ground side surface of the base substrate, the ground side surface of the second substrate, and the ground side surfaces of the plurality of connection lines.

A display may have organic light-emitting diode pixels formed from thin-film circuitry. The thin-film circuitry may be formed in thin-film transistor (TFT) layers and the organic light-emitting diodes may include anodes and cathodes and an organic emissive layer formed over the TFT layers between the anodes and cathodes. The organic emissive layer may be formed via chemical evaporation techniques. The display may include moisture blocking structures such as organic emissive layer disconnecting structures that introduce one or more gaps in the organic emissive layer during evaporation so that any potential moisture permeating path from the display panel edge to the active area of the display is completely terminated.

A display may have organic light-emitting diode pixels formed from thin-film circuitry. The thin-film circuitry may be formed in thin-film transistor (TFT) layers and the organic light-emitting diodes may include anodes and cathodes and an organic emissive layer formed over the TFT layers between the anodes and cathodes. The organic emissive layer may be formed via chemical evaporation techniques. The display may include moisture blocking structures such as organic emissive layer disconnecting structures that introduce one or more gaps in the organic emissive layer during evaporation so that any potential moisture permeating path from the display panel edge to the active area of the display is completely terminated.

Methods, systems, and devices are provided for organic vapor jet deposition (OVJP), which require significantly fewer print heads than conventional OVJP deposition systems. The disclosed OVJP systems include half the number of OVJP print heads than a conventional system, or less, and provide for relative movement of the substrate and print heads to allow for rapid and comprehensive material deposition over the full surface of the substrate.