An example provides a method for forming an apparatus including a substrate imprinted with a pattern for forming isolated device regions. A method may include imprinting an unpatterned area of a substrate with a pattern to form a patterned substrate having a plurality of recessed regions at a first level and a plurality of elevated regions at a second level, and depositing a first layer of conductive material over the patterned substrate with a plurality of breaks to form a plurality of bottom electrodes. The method may include depositing a layer of an active stack, with a second layer of conductive material, over the plurality of bottom electrodes to form a plurality of devices on the plurality of recessed regions isolated from each other by the plurality of elevated regions.

The present invention provides a sheet glass alignment system. The sheet glass alignment system comprises: an upper alignment platform and a lower alignment platform (1, 3) which are oppositely located; the upper alignment platform (1) is capable of moving up and down relative to the lower alignment platform (3); the upper alignment platform and the lower alignment platform (1, 3) respectively comprise a plurality of first and second stepped holes (13, 33) penetrating upper and lower surfaces thereof, and each of the first stepped holes (13) comprises a first wide portion (131) facing the lower alignment platform (3) and a first narrow portion (132) connecting to the first wide portion (131), and each of the second stepped holes (33) comprises a second wide portion (331) facing the upper alignment platform (1) and a second narrow portion (332) connecting to the second wide portion (331); first and second sucking discs are respectively installed on the first and the second wide portions (131, 331); a plurality of first and second push rods (19, 39) are respectively inserted into the plurality of first and second stepped holes (13, 33) and capable of moving up and down along axes of the plurality of first and second stepped holes (13, 33) where the plurality of first and second push rods (19, 39) are positioned therein.

The present disclosure provides a display panel and a fabricating method thereof, and a display device. The fabricating method for the display panel includes forming a glass adhesive layer on a packaging region of a first substrate, forming an OLED device on a display region of the first substrate, and aligning the first substrate with a second substrate, and forming a sealing structure between the first substrate and the second substrate by irradiating the packaging region with laser. The fabricating method for the display panel according to an embodiment of the present disclosure avoids the occurrence of the phenomenon that the coated glass adhesive layer and the evaporated organic light emitting layer are offset during the subsequent packaging process, by fabricating the glass adhesive layer on the substrate for forming the OLED device, thereby the production efficiency of the overall packaging process is enhanced.

The present disclosure provides a display backplane, a method for preparing the same, and a display device. The display backplane includes a substrate, an electronic device and an alignment mark arranged on the substrate, and a filling layer, the filling layer being filled in at least a part of a recessed area located on a surface of the substrate away from the electronic device, and a minimum distance between an orthogonal projection of the at least part of the recessed area on the substrate and an orthogonal projection of the alignment mark on the substrate being less than 200 μm.

A mask cassette alignment device includes: a first plate having a circular shape; and a first guide unit engaged with a side surface of the first plate and configured to rotate the first plate.

A display panel including a substrate; first, second, and third lower electrodes; first and second column banks; first, second, and third organic light-emitting layers; and an upper electrode. When a first ink for forming the first organic light-emitting layer, a second ink for forming the second organic light-emitting layer, and a third ink for forming the third organic light-emitting layer are applied, ink-separating capability of the first column bank for separating the first ink and the second ink is lower than ink-separating capability of the second column bank for separating the second ink and the third ink, and ink-separating capability depends on: (i) a height of the first and second column banks, or (ii) liquid repellency of the first column bank against the first ink and the second ink and liquid repellency of the second column bank against the second ink and the third ink.

In a method of forming a gate-all-around field effect transistor (GAA FET), a fin structure including CNTs embedded in a semiconductor layer is formed, a sacrificial gate structure is formed over the fin structure, the semiconductor layer is doped at a source/drain region of the fin structure, an isolation insulating layer is formed, a source/drain opening is formed by patterning the isolation insulating layer, and a source/drain contact layer is formed over the doped source/drain region of the fin structure.

An organic field effect transistor includes a channel structure defining an active area located between a source and a drain. The channel structure includes a photoalignment layer and an organic semiconductor layer disposed directly over the photoalignment layer. The photoalignment layer is configured to influence an orientation of molecules within the organic semiconductor layer and hence impact the mobility of charge carriers both within the active area and adjacent to the active area.

An organic field effect transistor includes a channel structure having a photoalignment layer and an organic semiconductor layer disposed directly over the photoalignment layer, where a charge carrier mobility varies along a thickness direction of the channel structure. The channel structure may define an active area between a source and a drain of the transistor and may include alternating layers of at least two photoalignment layers and at least two organic semiconductor layers. Each photoalignment layer is configured to influence an orientation of molecules within an overlying organic semiconductor layer and hence impact the mobility of charge carriers within the device active area while also advantageously decreasing the OFF current of the device.

A transistor and a fabrication method thereof. A transistor includes a channel region including linkers, formed on a substrate, and metallic nanoparticles grown from metal ions bonded to the linkers, a source region disposed at one end of the channel region, a drain region disposed at the other end of the channel region opposite of the source region, and a gate coupled to the channel region and serving to control migration of charges in the channel region. The metallic nanoparticles have a substantially uniform pattern arrangement in the channel region.