An aspect of the present disclosure is a method that includes exchanging at least a portion of a first cation of a perovskite solid with a second cation, where the exchanging is performed by exposing the perovskite solid to a precursor of the second cation, such that the precursor of the second cation oxidizes to form the second cation and the first cation reduces to form a precursor of the first cation.

An embodiment of the present disclosure provides a display panel having a non-rectangular display region. The display panel includes a substrate, a pixel definition layer, a first organic material layer, and a second organic material layer. The pixel definition layer is disposed on the substrate, and defines a first pixel area and a second pixel area on the substrate. The first organic material layer is disposed in the first pixel area and has a first light-emitting region. The second organic material layer is disposed in the second pixel area and has a second light-emitting region. The first organic material layer and the second organic material layer have the same material and the same vertical projection area on the substrate, and the vertical projection area of the first light-emitting region on the substrate is smaller than the vertical projection area of the second light-emitting region on the substrate.

Aspects relate to patterned nanostructures having a feature size not including film thickness below 5 microns. The patterned nanostructures are made up of nanoparticles having an average particle size less than 100 nm. A nanoparticle composition, which, in some cases, includes a binder material, is applied to a substrate. A patterned mold used in concert with electromagnetic radiation manipulate the nanoparticle composition in forming the patterned nanostructure. In some embodiments, the patterned mold nanoimprints a suitable pattern onto the nanoparticle composition and the composition is cured through UV or thermal energy. Three-dimensional patterned nanostructures may be formed. A number of patterned nanostructure layers may be prepared and joined together. In some cases, a patterned nanostructure may be formed as a layer that is releasable from the substrate upon which it is initially formed. Such releasable layers may be arranged to form a three-dimensional patterned nanostructure in accordance with suitable applications.

Programmable memory devices having a cross-point array of polymer junctions with individually-programmed conductances are provided. In one aspect, a method of forming a memory device includes: forming first metal lines on an insulating substrate; forming polymeric resistance elements on the first metal lines; and forming second metal lines over the polymeric resistance elements with a single one of the polymeric resistance elements present at each intersection of the first/second metal lines forming a cross-point array. A memory device and a method of operating a memory device are also provided.

Aspects relate to patterned nanostructures having a feature size not including film thickness of below 5 microns. The patterned nanostructures are made up of nanoparticles having an average particle size of less than 100 nm. A nanoparticle composition, which, in some cases, includes a binder material, is applied to a substrate. A patterned mold used in concert with electromagnetic radiation function to manipulate the nanoparticle composition in forming the patterned nanostructure. In some embodiments, the patterned mold nanoimprints a suitable pattern on to the nanoparticle composition and the composition is cured through UV or thermal energy. Three-dimensional patterned nanostructures may be formed. A number of patterned nanostructure layers may be prepared and suitably joined together. In some cases, a patterned nanostructure may be formed as a layer that is releasable from the substrate upon which it is initially formed. Such releasable layers may, in turn, be arranged to form a three-dimensional patterned nanostructure in accordance with suitable applications.

A rolled metal sheet includes an obverse surface and a reverse surface that is a surface located opposite to the obverse surface. At least either one of the obverse surface and the reverse surface is a processing object. A method for manufacturing a metal mask substrate includes reducing a thickness of the rolled metal sheet to 10 μm or less by etching the processing object by 3 μm or more by use of an acidic etching liquid, and roughening the processing object so that the processing object becomes a resist formation surface that has a surface roughness Rz of 0.2 μm or more, thereby obtaining a metal mask sheet.

There is provided a method of manufacturing a display unit. The method includes forming a plurality of first electrodes, forming a functional layer that covers from the first electrode to an inter-electrode region, and locally applying an energy ray to the functional layer to form a disconnecting section or a high-resistance section in the functional layer in the inter-electrode region.

Programmable memory devices having a cross-point array of polymer junctions with individually-programmed conductances are provided. In one aspect, a method of forming a memory device includes: forming first metal lines on an insulating substrate; forming polymeric resistance elements on the first metal lines; and forming second metal lines over the polymeric resistance elements with a single one of the polymeric resistance elements present at each intersection of the first/second metal lines forming a cross-point array. A memory device and a method of operating a memory device are also provided.

Provided is an organic EL device substrate (1) including, in order in a thickness direction: a light-transmitting plate; a high refractive index layer (4); and a transparent conductive layer (5), the organic EL device substrate (1) having a recessed groove portion (6) configured to divide the transparent conductive layer (5) at least into a first region (R1) and a second region (R2). When a thickness of the transparent conductive layer (5) is represented by t1 (μm), a minimum width of the recessed groove portion (6) is represented by w1 (μm), and a maximum depth of the recessed groove portion (6) with respect to a surface (5a) of the transparent conductive layer (5) on an opposite side of the high refractive layer (4) is represented by d1 (μm), the following relationships are established: t1≤d1; and d1/{(w1).sup.0.5}<0.1.

A device for converting radiation to electrical energy having a hybrid interface structure comprising an etched silicon surface and organic layer connected thereto. The invention provides methods for the preparation of said etched silicon surface and said hybrid interface.