An organic light emitting display device includes a first to a third pixel electrodes and a pixel defining layer disposed on a substrate, a first light emitting layer disposed on the first pixel electrode, a second light emitting layer disposed on the first to third pixel electrodes, a third light emitting layer disposed on the third pixel electrode, a thickness compensation layer disposed on the third pixel electrode, overlapping the third light emitting layer, and including Z-ITO having a ZnO.sub.x content of about 50 wt % or more, and about 90 wt % or less, and a common electrode disposed on the first to third light emitting layers.

Aspects relate to patterned nanostructures having a feature size not including film thickness of below 5 microns. The patterned nanostructures are made up of nanoparticles having an average particle size of less than 100 nm. A nanoparticle composition, which, in some cases, includes a binder, is applied to a substrate. A patterned mold used in concert with electromagnetic radiation function to manipulate the nanoparticle composition in forming the patterned nanostructure. In some embodiments, the patterned mold nanoimprints a pattern onto the nanoparticle composition and the composition is cured through UV or thermal energy. Three-dimensional patterned nanostructures may be formed. A number of patterned nanostructure layers may be prepared and joined together. In some cases, a patterned nanostructure may be formed as a layer that is releasable from the substrate upon which it is initially formed. Such releasable layers may be arranged to form a three-dimensional patterned nanostructure for suitable applications.

The present disclosure relates to a ligand for a quantum dot, a ligand quantum dot, a quantum dot layer and a method for patterning the same. The surface of the ligand quantum dot of the present disclosure is connected with the cleavage-type ligand including a first ligand unit A, a cleavage unit B, and an adhesion adjusting unit C. The method includes: providing a substrate; coating a mixture containing the ligand quantum dot on the substrate to form a quantum dot film; exposing a preset region of the quantum dot film to ultraviolet light, so that the cleavage unit B in the cleavage-type ligand undergoes a photolysis reaction, and a molecular segment containing the adhesion adjusting unit C and obtained after decomposition is detached from a surface of the quantum dot; and washing off an unexposed region of the quantum dot film with an organic solvent, followed by drying.

Provided are a lateral p-n junction black phosphorus thin film, and a method of manufacturing the same, and specifically, a lateral p-n junction black phosphorus thin film in which a p-type black phosphorus thin film having a p-type semiconductor property and a n-type black phosphorus thin film having a n-type semiconductor property form a lateral junction by modifying some regions on a surface of the black phosphorus thin film through light irradiation with a compound having a specific chemical structure, and a method of manufacturing the same.

Method of making an array of interconnected solar cells, including a) providing a continuous layer stack (1) of a prescribed thickness on a substrate (8), the layer stack (1) including an upper (2) and a lower (3) conductive layer having a photoactive layer (4) and a semiconducting electron transport layer (6) interposed there between; b) selectively removing the upper conductive layer (2) and the photoactive layer (4) for obtaining a contact hole (10) exposing the semiconducting electron transport layer (6); c) selectively heating the layer stack (1) to a first depth (d1) for obtaining a first heat affected zone (12) at a first center-to-center distance (s1) from the contact hole (10), the first heat affected zone (12) being transformed into a substantially insulating region with substantially the first depth (d1) in the layer stack, thereby locally providing an increased electrical resistivity to the layer stack (1).

According to one embodiment, a display device includes a connection electrode, a terminal electrode, an insulating layer including a contact hole, a lower electrode electrically connected to the connection electrode in the contact hole, a rib, a partition including a lower portion and an upper portion, an organic layer provided on the lower electrode, an upper electrode covering the organic layer, and a cover electrode covering the terminal electrode exposed from the insulating layer. The lower electrode includes a first transparent electrode, a first metal electrode located on the first transparent electrode, and a second transparent electrode located on the first metal electrode. The cover electrode is formed of a same material as the first transparent electrode.

A light-emitting component and a method for producing a light-emitting component are disclosed. I an embodiment the light-emitting component includes a layer sequence for generating light, wherein the layer sequence comprises a marking, and wherein the marking is formed as a luminescence degradation of the layer sequence.

An aspect of the present disclosure is a method that includes exchanging at least a portion of a first cation of a perovskite solid with a second cation, where the exchanging is performed by exposing the perovskite solid to a precursor of the second cation, such that the precursor of the second cation oxidizes to form the second cation and the first cation reduces to form a precursor of the first cation.

There is provided a method of manufacturing a display unit. The method includes forming a plurality of first electrodes, forming a functional layer that covers from the first electrode to an inter-electrode region, and locally applying an energy ray to the functional layer to form a disconnecting section or a high-resistance section in the functional layer in the inter-electrode region.

The present invention relates to a method comprising the steps: a) providing a layered structure applicable for preparing an organic electronic device, comprising: aa) a substrate comprising a first electrode structure and a non-electrode part; bb) a grid formed by a grid material, wherein open areas of the grid are arranged above at least a part of the first electrode structure and the grid material is arranged above at least a part of the non-electrode part; and cc) a layer stack comprising at least one redox-doped layer having a conductivity of at least 1E7 S/cm, the layer stack being deposited on the grid; wherein the optical density measured by absorption spectroscopy of the grid material is higher than the optical density of the open areas; and b) irradiating light pulses having a duration of <10 ms and an energy of 0.1 to 20 J/cm.sup.2 per pulse, alternatively 1 to 10 J/cm.sup.2, onto the layered structure; an organic electronic device obtainable this way and a device comprising said organic electronic device.