A thin-film transistor (TFT), includes: a substrate (202); an organic semiconductor (OSC) layer (210) positioned on the substrate; a dielectric layer (214) positioned on the OSC layer; and a polymeric interlayer (212) disposed in-between the OSC layer and the dielectric layer, such that the dielectric layer is configured to exhibit a double layer capacitance effect. A method of forming a thin-film transistor, includes: providing a substrate; providing a bottom gate layer atop the substrate; disposing consecutively from the substrate, an organic semiconductor (OSC) layer, a dielectric layer, and a top gate layer; and patterning the OSC layer, the dielectric layer, and the top gate layer using a single mask.

A laser etching apparatus includes a chamber, a laser port, a laser emitter, a particle grabber, and a revolving window module. The chamber is configured to receive a substrate. The laser port is disposed below the chamber in a downward direction. The laser emitter is configured to emit a laser to the substrate disposed within the chamber through the laser port. The particle grabber is disposed within the chamber and includes a body disposed over the laser port. An opening is formed through the body. The opening is configured to pass the laser therethrough. The revolving window module includes a revolving window and a driving part configured to drive the revolving window. The revolving window is disposed between the particle grabber and the laser port.

The present disclosure provides a flexible substrate, the flexible substrate is divided into a display region, a binding region on a side of the display region, a to-be-bent region between the display region and the binding region, two transition regions between the to-be-bent region and the display region and between the to-be-bent region and the binding region respectively; the transition regions comprise a plurality of transition sub-regions arranged in a first direction, the first direction is a direction from the display region to the binding region; the flexible substrate comprises a flexible base and a back film disposed on the flexible base, a portion of the back film is located in the transition regions; in any one of the transition regions, the amount of distribution per unit area of the back film in each of the transition sub-regions gradually decreases in a direction gradually approaching the to-be-bent region.

A display panel and a method of manufacturing the same are provided. The method of manufacturing the display panel includes providing a substrate, and forming other layers on the substrate sequentially. Accordingly, a first via hole, a second via hole, and a third via hole are formed. The first via hole and the second via hole are filled with a flexible material to form a flexible layer and a stress release unit, respectively. Then, a metal layer which fills the third via hole is formed on the interlayer dielectric layer.

According to one embodiment, a method of manufacturing a display device includes forming a lower electrode, forming an insulating layer covering the lower electrode, forming a partition including a lower portion on the insulating layer and an upper portion protruding from a side surface of the lower portion, forming, after the forming of the partition, a pixel aperture in the insulating layer, forming an organic layer in contact with the lower electrode via the aperture, forming an upper electrode which covering the organic layer and patterning the organic layer and the upper electrode to form a display element.

An organic light emitting diode display including: a substrate; a TFT on the substrate; a planarization layer on the TFT; a pixel electrode on the planarization layer, wherein the pixel electrode includes upper and lower layers including a transparent conductive oxide and an intermediate layer including silver; an etch stop layer on the pixel electrode, wherein an upper surface of the pixel electrode is exposed by the etch stop layer; a partition on the etch stop layer, wherein the upper surface of the pixel electrode is exposed by the partition; an organic emission layer on the upper surface of the pixel electrode where the upper surface of the pixel electrode is exposed by the etch stop layer and the partition; and a common electrode on the organic emission layer and the partition, wherein the etch stop layer covers an edge and a side surface of the pixel electrode.

A display device with a narrow bezel is provided. The display device includes a pixel circuit and a driver circuit which are provided on the same plane. The driver circuit includes a selection circuit and a buffer circuit. The selection circuit includes a first transistor. The buffer circuit includes a second transistor. The first transistor has a region overlapping with the second transistor. One of a source and a drain of the first transistor is electrically connected to a gate of the second transistor. One of a source and a drain of the second transistor is electrically connected to the pixel circuit.

Provided is a method for preparing a display substrate. The display substrate includes multiple pixel island regions, empty regions and connection bridge regions. The preparation method includes: forming first grooves corresponding to the pixel island regions and second grooves corresponding to the connection bridge regions on a side of a hard underlay substrate; preparing the display substrate on a side of the underlay substrate where the first grooves and the second grooves are formed, wherein the pixel island regions are located in regions where the first grooves are located, the connection bridge regions are located in regions where the second grooves are located, and the empty regions are located in regions other than the first grooves and the second grooves; and separating the underlay substrate from the display substrate to obtain the display substrate.

Devices include a substrate, a collector layer, and an emitter layer positively biased relative to the collector. Devices further include a semiconductor layer located between the collector and the emitter. The semiconductor layer includes an organic semiconductor polymer with a donor-acceptor structure.

According to one embodiment, a manufacturing method of a display device includes providing a processing substrate in which a lower electrode is formed on a stage inside a chamber, forming a first insulating layer overlapping the lower electrode in a state where a first distance is formed between the stage and a counter-electrode, and subsequently forming a second insulating layer on the first insulating layer in a state where a second distance greater than the first distance is formed between the stage and the counter-electrode, forming a rib by patterning the first insulating layer and the second insulating layer, forming a partition, forming an organic layer, forming an upper electrode, forming a cap layer, and forming a sealing layer.