Patent classifications
H10K71/231
ETCHANT COMPOSITION AND MANUFACTURING METHOD OF DISPLAY DEVICE USING THE SAME
Embodiments provide an etchant composition that includes about 5.0 to about 20.0 wt % of a persulfate, about 0.01 to about 15.0 wt % of a sulfonic acid, about 0.01 to about 2.0 wt % of a fluorine compound, about 0.01 to about 5.0 wt % of a 4-nitrogen cyclic compound, about 0.01 to about 1.0 wt % of an amino acid including a hydrophobic group having at least two carbon atoms, and water A weight ratio of the amino acid to the 4-nitrogen cyclic compound is in a range of about 1:16 to about 1:60.
ORGANIC LIGHT-EMITTING DISPLAY PANEL AND MANUFACTURING METHOD THEREOF
An OLED panel includes a light emitting substrate and a color filter substrate. The light-emitting substrate includes a multi-layer OLED film emitting white light. The color filter substrate includes a color filter array, a conductive layer that is electrically connected to a wall-shaped elastic conductor that is wearing a metal cap. The two substrates are laminated together in a manner that the metal cap is in direct contact with cathode electrode of the OLED at the site of pixel definition layer. The total resistance of the cathode layer of the OLED is therefore reduced significantly, and voltage-drop on cathode and associated image artifacts are minimized.
DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME
A display device includes a planarization layer disposed on a substrate, a first electrode disposed on the planarization layer and including silver (Ag), a contact preventing layer disposed on the first electrode, including a light absorbing material, and including a top surface and a side surface extending from an end of the top surface, and a pixel defining layer disposed on the contact preventing layer and including a bottom surface facing the top surface of the contact preventing layer, and a side surface extending from an end of the bottom surface. The first electrode includes a first region overlapping pixel defining layer. The contact preventing layer includes a second region overlapping the first region between the first electrode and the pixel defining layer. A first edge where the top and side surfaces of the contact preventing layer meet is located on the bottom surface of the pixel defining layer.
ELECTRONIC DEVICE, MANUFACTURING METHOD FOR ELECTRONIC DEVICE, AND DEPOSITION MASK GROUP
A manufacturing method for an electronic device includes a preparation step of preparing a layered body including a substrate, two or more first electrodes, and organic layers, the substrate having a first surface and a second surface that is positioned opposite to the first surface, the two or more first electrodes positioned above the first surface of the substrate, the organic layers positioned above the first electrodes; a second electrode formation step of forming a second electrode above the organic layers so that the second electrode overlaps the two or more first electrodes when viewed in a normal direction to the first surface of the substrate; and a removal step of partly removing regions of the second electrode that is positioned between the first electrodes in plan view.
ENCAPSULATION METHOD OF DISPLAY PANEL, DISPLAY PANEL, AND DISPLAY DEVICE
An encapsulation method of a display panel, a display panel and a display device are disclosed. The encapsulation method of the display panel includes: forming at least one thin film encapsulation inorganic material layer on a thin film encapsulation region of a display substrate; forming a photoresist pattern on the at least one thin film encapsulation inorganic material layer; and etching the at least one thin film encapsulation inorganic material layer by using the photoresist pattern as a mask to form a thin film encapsulation inorganic layer including a first opening pattern.
Photovoltaic device having a light absorbing layer including a plurality of grains of a doped semiconducting material
The present invention relates to a photovoltaic device (10) comprising: a first conducting layer (16), a second conducting layer electrically insulated from the first conducting layer, a porous substrate (20) made of an insulating material arranged between the first and second conducting layers, a light absorbing layer (1) comprising a plurality of grains (2) of a doped semiconducting material disposed on the first conducting layer (16) so that the grains are in electrical and physical contact with the first conducting layer, and a charge conductor (3) made of a charge conducting material partly covering the grains and arranged to penetrate through the first conducting layer (16) and the porous substrate such that a plurality of continuous paths (22) of charge conducting material is formed from the surface of the grains (2) to the second conducting layer (18), wherein the first conducting layer (16) comprises a conducting material, an oxide layer (28) formed on the surface of conducting material, and an insulating coating (29) made of an insulating material deposited on the oxide layer (28) so that the oxide layer and the insulating coating together electrically insulate said paths (22) from the conducting material of the first conducting layer (16).
Organic emitting display device having reflective metal layers on different levels above red, green and blue pixel regions and method of manufacturing same
An organic light emitting display device in which a sidewall of a reflective metal layer in a blue pixel region is covered with an inorganic film and in which the reflective metal layer is thus prevented from being damaged or rendered defective when performing subsequent processes, such as etching and cleaning, for forming an anode on the reflective metal layer.
ARRAY SUBSTRATE, STRETCHABLE DISPLAY DEVICE, AND METHOD FOR MANUFACTURING ARRAY SUBSTRATE
The present disclosure provides an array substrate, a stretchable display device, and a method for manufacturing an array substrate. The array substrate includes: a display area; a circuit area configured to provide an electrical signal to the display area; and a protection area including a plurality of island-shaped protection blocks, a plurality of first connection bridges and a plurality of second connection bridges, wherein each of the plurality of first connection bridges is configured to connect two adjacent island-shaped protection blocks of the plurality of island-shaped protection blocks, and the plurality of second connection bridges are configured to connect the protection area and the circuit area, and wherein the plurality of first connection bridges include a first flexible substrate, and the plurality of second connection bridges include a second flexible substrate.
FLEXIBLE DISPLAY PANEL AND FABRICATING METHOD THEREOF
A flexible display panel and a fabricating method thereof are provided. The fabricating method has: disposing an active layer and a gate of a switching tube of the flexible display panel sequentially on a substrate, wherein the switching tube is in the display area; disposing a source and a drain on the gate, wherein a signal connection line at same layer as the source and the drain is disposed in the non-display area; disposing a first insulating layer and a metal connection line sequentially on the source and the drain, wherein the first insulating layer and/or the metal connection line further extends into the non-display area and covers the signal connection line. This application increases thickness of film layers on the signal connection line, and also avoids phenomenon that the signal connection line is etched away due to over-etching upon etching the metal connection line, thereby causing disconnection phenomenon.
BACKSIDE ETCH PROCESS FOR TRANSPARENT SILICON OXIDE TECHNOLOGY
Increasing transparency of one or more micro-displays. A method includes attaching a transparent cover to at least a portion of a semiconductor wafer. The at least a portion of the semiconductor wafer includes the one or more micro-displays. The one or more micro-displays include one or more active silicon areas. The method further includes, after the transparent cover has been attached to the at least a portion of the semiconductor wafer, removing silicon between one or more of the active silicon areas.