Provided herein is a sequentially processed fabrication method involving donor-acceptor conjugated polymers with temperature dependent aggregation (TDA) useful for the preparation of organic semiconductors with improved properties.

The invention provides a photoelectric conversion element exhibiting excellent photoelectric conversion efficiency even in a case where the photoelectric conversion film is a thin film. Also, the invention provides an optical sensor and an imaging element including the photoelectric conversion element. The invention provides a compound applied to the photoelectric conversion element. The photoelectric conversion element of the invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order, in which the photoelectric conversion film contains a compound represented by Formula (1). ##STR00001##

The present invention generally relates to artificial photosystems and methods of their use, for example in artificial photosynthesis, wherein the artificial photosystems comprise one or more light-harvesting antenna (LHA) comprising a conjugated polyelectrolyte (CPE) complex (CPEC) comprising a donor CPE and an acceptor CPE, wherein the donor CPE and acceptor CPE are an electronic energy transfer (EET) donor/acceptor pair.

An infrared absorber includes a compound represented by Chemical Formula

##STR00001##

In Chemical Formula 1, Ar.sup.1, Ar.sup.2, X.sup.1, L.sup.1, L.sup.2, R.sup.1, R.sup.2, R.sup.3, and R.sup.4 are the same as defined in the detailed description.

An imaging system includes a light source that, in operation, emits an emitted light containing a near-infrared light in a first wavelength region, an image sensor, and a double-band pass filter that transmits a visible light in at least a part of a wavelength region out of a visible region and the near-infrared light in the first wavelength region. The image sensor includes light detection cells, a first filter that selectively transmits the near-infrared light in the first wavelength region, second to fourth filters that selectively transmit lights in second to fourth wavelength regions, respectively, which are contained in the visible light, and an infrared absorption filter. The infrared absorption filter faces the second to fourth filters and absorbs the near-infrared light in the first wavelength region.

The present technology relates to a solid-state imaging element, a method for manufacturing a solid-state imaging element, a photoelectric conversion element, an imaging device, and an electronic apparatus that are capable of realizing highly efficient photoelectric conversion of blue light with organic photoelectric conversion element.

A first organic semiconductor having a characteristic of absorbing blue light, a second organic semiconductor having a characteristic of absorbing blue light and a characteristic as a hole-transporting material having crystallinity, and a third organic semiconductor including a fullerene derivative are mixed to form an organic photoelectric conversion layer. The present technology can be applied to a solid-state imaging element.

The present technology relates to a solid-state imaging element, a method for manufacturing a solid-state imaging element, and a solid-state imaging apparatus, capable of improving blue light photoelectric conversion efficiency of an organic photoelectric conversion element.

An organic photoelectric conversion layer is formed by mixing a first organic semiconductor containing a perylene derivative having characteristics of absorbing blue light, a second organic semiconductor having characteristics of absorbing blue light and also having characteristics as a hole transport material having crystallinity, and a third organic semiconductor containing a fullerene derivative. The present technology can be applied to a solid-state imaging element.

The disclosure provides an efficient and stable inorganic lead-free perovskite solar cell and a method for preparing the same. The solar cell includes a conductive substrate, a PEDOT: PSS layer, an inorganic lead-free CsSnI.sub.3 perovskite layer, a C60 layer, a BCP layer, and a metal counter electrode layer arranged in order from bottom to top, wherein the inorganic lead-free CsSnI.sub.3 perovskite layer is a CsSnI.sub.3 perovskite layer passivated by a thioureas small-molecule organic compound.

A photoelectric conversion module includes photoelectric conversion elements electrically coupled. The photoelectric conversion elements each sequentially include first electrode, photoelectric conversion layer, and second electrode. The photoelectric conversion module includes first photoelectric conversion element, second photoelectric conversion element, and coupling portion to couple the first and second photoelectric conversion elements in series. The first electrode or the second electrode forming the first photoelectric conversion element includes a contact region in contact with the coupling portion, and a contactless region in contactless with the coupling portion and at a side of the first photoelectric conversion element relative to the coupling portion. The length of the contactless region in a coupling direction in which the first and second photoelectric conversion elements are coupled to each other is 30 mm or less.

The invention relates to novel organic semiconductor (OSC) formulations, to their use for the preparation of OSC layers or OSC patterns in organic electronic (OE) devices, especially organic photovoltaic (OPV) devices, perovskite-based solar cell (PSC) devices, organic photo-detectors (OPD), organic field effect transistors (OFET) and organic light emitting diodes (OLED), and to OE, OPV, PSC, OPD, OFET and OLED devices comprising an OSC layer or OSC pattern prepared from these OSC formulations.